Kevin Berwick

Design criteria and optical characteristics of one-dimensional photonic crystals based on periodically grooved silicon.

Photonic bandgap (PBG) regions have been calculated for periodically grooved Si structures, acting as a one-dimensional photonic crystal. The wavelength range of the PBG as a function of the ratio (DSi/A) is presented, where DSi is the width of the Si walls and A is the grooved silicon lattice constant. The influence of the parameter DSi, the refractive index of the space between the Si walls and the number of structure periods, m, on the forming of PBG regions is discussed. A good correlation between the calculated and the experimentally observed PBG regions is obtained.

Silicon photonic crystal filter with ultrawide passband characteristics

We report on what is believed to be the first example of an ultrawide, bandpass filter, based on a high-contrast multicomponent one-dimensional Si photonic crystal (PC). The effect of the disappearance of a limited number of flat stopbands and their replacement with extended passbands is demonstrated over a wide IR range. The passbands obtained exhibit a high transmission of 92% to 96% and a substantial bandwidth of 1800 nm, which is spectrally flat within the passband. The multicomponent PC model suggested can be applied to the design of any micro- or nanostructured semiconductor or dielectric material for application across a wide spectral range.

Self-Organization of Colloidal PbS Quantum Dots into Highly Ordered Superlattices

X-ray structural analysis, together with steady-state and transient optical spectroscopy, is used for studying the morphology and optical properties of quantum dot superlattices (QDSLs) formed on glass substrates by the self-organization of PbS quantum dots with a variety of surface ligands. The diameter of the PbS QDs varies from 2.8 to 8.9 nm. The QDSLs period is proportional to the dot diameter, increasing slightly with dot size due to the increase in ligand layer thickness. Removal of the ligands has a number of effects on the morphology of QDSLs formed from the dots of different sizes: for small QDs the reduction in the amount of ligands obstructs the self-organization process, impairing the ordering of the QDSLs, while for large QDs the ordering of the superlattice structure is improved, with an interdot distance as low as 0.4 nm allowing rapid charge carrier transport through the QDSLs. QDSL formation does not induce significant changes to the absorption and photoluminescence spectra of the QDs. However, the luminescence decay time is reduced dramatically, due to the appearance of nonradiative relaxation channels.

Design of one-dimensional composite photonic crystals with an extended photonic band gap

A technique for photonic band gap (PBG) extension based on mixing photonic crystals with different lattice constants or filling factors is suggested. For the design of photonic crystals with maximal PBG extension the gap map imposition method is utilized. Gap maps for composite photonic crystals based on Si-air structures are calculated and used to predict optimal structures for fabrication.

Dissociative CdSe/ZnS Quantum Dot-Molecule Complex for Luminescent Sensing of Metal Ions in Aqueous Solutions

The optical properties of dissociative luminescent sensors based on a complex consisting of highly luminescent hydrophobic core/shell CdSe/ZnS quantum dots (QDs) and 1-(2-pyridilazo)-2-naphtol (PAN) molecules in organic solutions and a polymer film are reported. It is demonstrated, using Ni2+ and Co2+ ions as an illustrative example, that the QD/PAN sensor may have applications in the quantitative luminescent sensing of metal ions in aqueous solutions.

Optical Contrast Tuning in Three-Component One-Dimensional Photonic Crystals

In this study, three-component 1-D photonic crystal (PC) structures were investigated by modeling them as two-component PCs with an additional regular layer. The gap map (GM) approach and the transfer matrix method (TMM) were used in order to mathematically describe these structures. The introduction of a third component to a 1-D PC allows manipulation of the optical contrast to a high degree of precision by varying the thickness and refractive index of the additional layer. The introduction of a third component to the 1-D PC partially reduces the area of the photonic stopbands (SBs) on the GM, leaving the rest of SB area unchanged from that in the GM for the original, two-component, PC. Using this approach to decrease optical contrast in PCs, omnidirectional bands (ODBs) can be obtained in high-contrast periodic structures constructed from, for example, an array of silicon and air. Several mathematical models of three-component 1-D PCs are discussed, some of which may have practical applications.

Electron-electron scattering in a double quantum dot: effective mass approach

We present a theoretical description of the first-order scattering of interacting electrons and holes in a double quantum dot. Assuming infinitely high walls, strong confinement, and a two-band approximation, we derive general expressions for the two-particle matrix elements of the screened Coulomb potential. We also determine the selection rules for different scattering channels and consider special cases where the corresponding matrix elements can be represented by simple analytical expressions. Numerical calculations of the matrix elements and an analysis of their dependence on the geometrical and material parameters of the double quantum dot have also been performed.

FTIR and Raman investigation of vertically etched silicon as a 1D photonic crystal

The reflection spectra of composite materials on the base of grooved silicon and grooved silicon infiltrated with nematic liquid crystal (LC) have been calculated using the optimal parameters of a grooved silicon matrix suitable for the infrared range. The grooved silicon structures with different lattice constants (A=16, 12, 8 and 4 mm) have been designed and prepared. An important parameter of these structures is the thickness of the silicon walls (DSi). This has been obtained using simulations of the spectra. This parameter was used for further analysis of the spectra of composite material grooved Si-LC. The experimental reflection is reaching of 65% in maximum (with signal modulation from maximum to minimum up to 55%) for the composite structures with a small number of lattice periods that makes these structures very perspective with a potential applications. The analysis of the polarised infrared spectra of Si structures infiltrated with LC allows one to determine the orientation and the refractive index (NLC) of the liquid crystal. For the samples with a distance between Si walls of 6-10 mm, it was found that the refractive index was NLC=~ 1.5 for polarised light and NLC 1.5 for s-polarised light. This leads to the conclusion on the planar orientation of liquid crystal molecules with respect to the Si walls. For the samples with distance between Si walls less than 3 mm, a homeotropic alignment of liquid crystal molecules has been found. Micro-Raman spectroscopy has been applied for analysis of stress in such Si structures. The maximum stress of about 2 GPa was obtained on the top of Si walls (under Si dioxide layer).

Note: Near infrared spectral and transient measurements of PbS quantum dots luminescence

We describe an experimental setup for the characterization of luminescence from nanostructures. The setup is intended for steady-state and time-resolved luminescence measurements in the near-infrared region. The setup allows us to study spectral luminescence properties in the spectral range of 0.8-2.0 μm with high spectral resolution and kinetic luminescence properties between 0.8 and 1.7 μm with a time resolution of 3 ns. The capabilities of the system are illustrated by taking luminescence measurements from PbS quantum dots. We established the size dependencies of the optical properties of the PbS quantum dots over a wide spectral range. Finally, the energy transfer process was studied with a high temporal and spectral resolution.

Reversible photoluminescence quenching of CdSe/ZnS quantum dots embedded in porous glass by ammonia vapor.

The photoluminescence response of semiconductor CdSe/ZnS quantum dots embedded in a borosilicate porous glass matrix to exposure to ammonia vapor is investigated. The formation of surface complexes on the quantum dots results in quenching of the photoluminescence and a shortening of the luminescence decay time. The process is reversible, desorption of ammonia molecules from the quantum dot surface causes the photoluminescence to recover. The sensitivity of the quantum dot luminescence intensity and decay time to the interaction time and the reversibility of the photoluminescence changes make the CdSe/ZnS quantum dots in porous glass system a candidate for use as an optical sensor of ammonia.