Kevin Luke

Overcoming Si 3 N 4 film stress limitations for high quality factor ring resonators

We overcome stress limitations of thick SiN films using termination trenches to isolate the device area from crack propagation. We measure an unprecedented quality factor of 6.5 million in a high confinement SiN ring resonator.

Thermally controlled comb generation and soliton modelocking in microresonators.

We report, to the best of our knowledge, the first demonstration of thermally controlled soliton mode-locked frequency comb generation in microresonators. By controlling the electric current through heaters integrated with silicon nitride microresonators, we demonstrate a systematic and repeatable pathway to single- and multi-soliton mode-locked states without adjusting the pump laser wavelength. Such an approach could greatly simplify the generation of mode-locked frequency combs and facilitate applications such as chip-based dual-comb spectroscopy.

Broadband mid-infrared frequency comb generation in a Si(3)N(4) microresonator.

We demonstrate broadband frequency comb generation in the mid-infrared from 2.3 to 3.5 μm in a Si₃N₄ microresonator with Q=850,000 fabricated using an optimized process for decreasing intrinsic losses and overcoming stress limitations.

High Coupling Efficiency Etched Facet Tapers in Silicon Waveguides

We demonstrate a platform based on etched facet silicon inverse tapers for waveguide-lensed fiber coupling with a loss as low as 0.7 dB/facet. This platform can be fabricated on a wafer scale enabling mass-production of silicon photonic devices with broadband, high-efficiency couplers.

Octave-spanning coherent supercontinuum generation in a silicon nitride waveguide

We demonstrate the generation of a supercontinuum spanning more than 1.4 octaves in a silicon nitride waveguide using sub-100-fs pulses at 1 μm generated by either a 53-MHz, diode-pumped ytterbium (Yb) fiber laser or a 1-GHz, Yb:CaAlGdO(4) (Yb:CALGO) laser. Our numerical simulations show that the broadband supercontinuum is fully coherent, and a spectral interference measurement is used to verify that the supercontinuum generated with the Yb:CALGO laser possesses a high degree of coherence over the majority of its spectral bandwidth. This coherent spectrum may be utilized for optical coherence tomography, spectroscopy, and frequency metrology.

Bandwidth shaping of microresonator-based frequency combs via dispersion engineering

We investigate experimentally and theoretically the role of group-velocity dispersion and higher-order dispersion on the bandwidth of microresonator-based parametric frequency combs. We show that the comb bandwidth and the power contained in the comb can be tailored for a particular application. Additionally, our results demonstrate that fourth-order dispersion plays a critical role in determining the spectral bandwidth for comb bandwidths on the order of an octave.

Tunable frequency combs based on dual microring resonators.

We demonstrate tunable coupling condition of a silicon nitride microresonator frequency comb. Using a dual-coupled resonator geometry and integrated microheaters, we achieve 13.3 dB of extinction tuning and observe 10-fold increase in generated power.

On-chip frequency comb generation at visible wavelengths via simultaneous second- and third-order optical nonlinearities.

Microresonator-based frequency comb generation at or near visible wavelengths would enable applications in precise optical clocks, frequency metrology, and biomedical imaging. Comb generation in the visible has been limited by strong material dispersion and loss at short wavelengths, and only very narrowband comb generation has reached below 800 nm. We use the second-order optical nonlinearity in an integrated high-Q silicon nitride ring resonator cavity to convert a near-infrared frequency comb into the visible range. We simultaneously demonstrate parametric frequency comb generation in the near-infrared, second-harmonic generation, and sum-frequency generation. We measure 17 comb lines converted to visible wavelengths extending to 765 nm.

Frequency comb offset detection using supercontinuum generation in silicon nitride waveguides

We present the first direct carrier-envelope-offset (CEO) frequency detection of a modelocked laser based on supercontinuum generation (SCG) in a CMOS-compatible silicon nitride (Si(3)N(4)) waveguide. With a coherent supercontinuum spanning more than 1.5 octaves from visible to beyond telecommunication wavelengths, we achieve self-referencing of SESAM modelocked diode-pumped Yb:CALGO lasers using standard f-to-2f interferometry. We directly obtain without amplification strong CEO beat signals for both a 100-MHz and 1-GHz pulse repetition rate laser. High signal-to-noise ratios (SNR) of > 25 dB and even > 30 dB have been generated with only 30 pJ and 36 pJ of coupled pulse energy from the megahertz and gigahertz laser respectively. We compare these results to self-referencing using a commercial photonic crystal fiber and find that the required peak power for CEO beat detection with a comparable SNR is lowered by more than an order of magnitude when using a Si(3)N(4) waveguide.

Gigahertz frequency comb offset stabilization based on supercontinuum generation in silicon nitride waveguides.

Silicon nitride (Si3N4) waveguides represent a novel photonic platform that is ideally suited for energy efficient and ultrabroadband nonlinear interactions from the visible to the mid-infrared. Chip-based supercontinuum generation in Si3N4 offers a path towards a fully-integrated and highly compact comb source for sensing and time-and-frequency metrology applications. We demonstrate the first successful frequency comb offset stabilization that utilizes a Si3N4 waveguide for octave-spanning supercontinuum generation and achieve the lowest integrated residual phase noise of any diode-pumped gigahertz laser comb to date. In addition, we perform a direct comparison to a standard silica photonic crystal fiber (PCF) using the same ultrafast solid-state laser oscillator operating at 1 µm. We identify the minimal role of Raman scattering in Si3N4 as a key benefit that allows to overcome the fundamental limitations of silica fibers set by Raman-induced self-frequency shift.