Kh. S. Martirosyan

Low reflectance of diamond-like carbon/porous silicon double layer antireflection coating for silicon solar cells

Reflectance calculations for diamond-like carbon (DLC) antireflection thin-film coatings on porous silicon (PS) have been carried out using the optical matrix approach method. Comparison with the reflectance spectrum obtained for other antireflection coatings shows a much lower reflectance with a larger energy range including the ultraviolet, visible and infrared regions of the solar spectrum for the DLC/PS double layer. This finding is relevant in solar cell applications.

Almost zero reflectance of a silicon oxynitride/porous silicon double layer antireflection coating for silicon photovoltaic cells

Reflectance spectrum calculations for a silicon oxynitride (SiOxNy)–porous silicon (PS) double layer antireflection coating is performed using the matrix method. The results are compared with the corresponding spectrum of diamond-like carbon (DLC)/PS and SiO2/TiO2 double layer coatings. A lower reflectance in the visible and infrared regions of the solar spectrum for the SiOxNy/PS double layer is obtained, especially in the 450–600 nm spectral range (with a flat reflectance response remaining as low as ≈0.01%), which corresponds to the maximum intensity of solar irradiation. These findings are of importance in solar cell applications.

Influence of anodization parameters of porous silicon on its glucose sensitivity

Influence of the anodization parameters of porous silicon on its glucose sensitivity was investigated by measuring the current-voltage characteristics and resistance of samples. It is shown that the sensitivity increases sharply up to 5.5 times with increase in the anodization current density.

Analysis of characteristics of porous silicon layers obtained on the p -type single-crystal silicon

Porous silicon layers on the p-type silicon substrate with different porosity and thickness have been obtained by electrochemical anodization method. Dependences of porosity and thickness of the layers on the content of HF in solution, anodization current density and anodization time were analyzed. The obtained experimental results are approximated by analytical expressions for revealing the regimes at which porous silicon layers with desired parameters can be produced.