Khalid Kandoussi
University of Rennes
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Publication
Featured researches published by Khalid Kandoussi.
Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors 3 | 2011
Tayeb Mohammed-Brahim; Khalid Kandoussi; Khaled Belarbi; Hervé Lhermite; Nathalie Coulon
The subthreshold slope of microcrystalline silicon Thin Film Transistor is shown to be highly improved when the thickness of the active layer is enough decreased. In the same manner, the threshold voltage of these TFTs with very thin active layer is shown to be controlled dynamically with high efficiency by a second gate in front of the first one. These behaviours are explained considering the similarities between these TFTs and fully depleted SOI-MOSFETs as well as with dual-gate SOI-MOSFETS.
ECS Transactions | 2011
Tayeb Mohammed-Brahim; Khalid Kandoussi; Khaled Belarbi; Hervé Lhermite; Nathalie Coulon
The subthreshold slope of microcrystalline silicon Thin Film Transistor is shown to be highly improved when the thickness of the active layer is enough decreased. In the same manner, the threshold voltage of these TFTs with very thin active layer is shown to be controlled dynamically with high efficiency by a second gate in front of the first one. These behaviours are explained considering the similarities between these TFTs and fully depleted SOI-MOSFETs as well as with dual-gate SOI-MOSFETS.
2011 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT) | 2011
Tayeb Mohammed-Brahim; Khalid Kandoussi; Khaled Belarbi; Hervé Lhermite; Nathalie Coulon
The subthreshold slope of microcrystalline silicon Thin Film Transistor is shown to be highly improved when the thickness of the active layer is enough decreased. In the same manner, the threshold voltage of these TFTs with very thin active layer is shown to be controlled dynamically with high efficiency by a second gate in front of the first one. These behaviours are explained considering the similarities between these TFTs and fully depleted SOI-MOSFETs as well as with dual-gate SOI-MOSFETS.
Journal of Non-crystalline Solids | 2006
Khalid Kandoussi; Arc'Hanmael Gaillard; Nathalie Coulon; Tanguy Pier; Tayeb Mohammed-Brahim
Journal of Non-crystalline Solids | 2008
Khalid Kandoussi; Nathalie Coulon; Khaled Belarbi; Tayeb Mohammed-Brahim
Journal of Non-crystalline Solids | 2008
Tanguy Pier; Khalid Kandoussi; Nathalie Coulon; Tayeb Mohammed-Brahim; Hervé Lhermite
Journal of Non-crystalline Solids | 2006
Khalid Kandoussi; Nathalie Coulon; Tayeb Mohammed-Brahim; Alain Moréac
Physica Status Solidi (c) | 2008
Tanguy Pier; Khalid Kandoussi; Nathalie Coulon; Tayeb Mohammed-Brahim; Hervé Lhermite
Thin Solid Films | 2007
Tanguy Pier; Khalid Kandoussi; Nathalie Coulon; Hervé Lhermite; Tayeb Mohammed-Brahim; Jean-François Bergamini
Solid-state Electronics | 2011
Khalid Kandoussi; Emmanuel Jacques; Nathalie Coulon; Tayeb Mohammed-Brahim
Collaboration
Dive into the Khalid Kandoussi's collaboration.
