Ki-Hun Joh

Design of 1.2 GeV synchrotron light source for X-ray lithography at Samsung Heavy Industries

An 1.2 GeV electron storage ring being designed at Samsung Heavy Industries Daeduk R&D Center is optimized for X-ray lithography works for high density semiconductor devices and micro-machining. The lattice is a variation of a FODO arrangement with four quadrupole doublets. The circumference of 57.6 m includes four 2.1-m-long straight sections and two 3.09-m-long dispersion-free straight sections making the synchrotron a racetrack shape. Two dispersion-free straight sections are located between the doublets and reserved for diagnostics and insertion devices. The harmonic number is 96 and the corresponding RF frequency is 449.654 MHz. The critical X-ray wavelength from sixteen 1.16-m-long bending magnets is 9.55 /spl Aring/ and a superconducting wiggler is also included in the design considerations. The major features of the light source will be described.

Applications of industrial electron accelerators at Samsung Heavy Industries

An industrial electron beam accelerator has been developed at Samsung Heavy Industries with the collaboration of Seoul National University and Russian Budker Institute of Nuclear Physics. The accelerator is a high voltage accelerator using rectifiers and able to deliver 40 mA of 1 MeV electrons in CW mode. Functionally, the accelerator is an electron irradiation processing device and an electron beam scanning system is employed for the uniform irradiation of the electron beam through the extraction window of the size 980 mm/spl times/75 mm. The industrial applications of the electron irradiation processes include combustion flue gas purification process, treatment of industrial waste water containing refractory pollutant, treatment of semiconductor devices, and radio-chemical processes. The major features of the device and its industrial applications will be described.