Ki-Jeong Yoon

Property of the Nano-Thick TiO 2 Films Using an ALD at Low Temperature

【We fabricated 10 nm-

Properties of iridium-inserted nickel silicides by thermal annealing of the Ni/Ir bilayer on silicon and polysilicon substrates

TiO_2

Microstructure Evaluation of Nano-thick Au-inserted Nickel Silicides

thin films for DSSC (dye sensitized solar cell) electrode application using ALD (atomic layer deposition) method at the low temperatures of

Microstructure Characterization for Nano-thick Ir-inserted Nickel Silicides

150^{\circ}\;and\;250^{\circ}

Thermal Stability Enhancement of Nickel Monosilicides by Addition of Iridium

. We characterized the crosssectional microstructure, phase, chemical binding energy, and absorption of the

Characterization of NiCo composite silicides by 10 nm-Ni50Co50 alloy films with additional annealing

TiO_2

Microstructure evolution with RTA temperature in nano-thick (Ru or Au)-inserted nickel silicides

using TEM, HRXRD, XPS, and UV-VIS-NIR, respectively. TEM analysis showed a 10 nm-thick flat and uniform

Microstructure evolution of the Ir-inserted Ni silicides with additional annealing

TiO_2

Milling of NiCo Composite Silicide Interconnects using a FIB

thin film regardless of the deposition temperatures. Through XPS analysis, it was found that the stoichiometric

UV Absorption of Nano-thick

TiO_2