Kian Heng Goh

Electrical, microstructural, and surface roughness study of thermally oxidized metallic Sm thin film on Si substrate

Electrical, microstructural, and surface roughness of 150 nm sputtered pure samarium metal film on silicon substrates which thermal oxidized in oxygen ambient at various temperatures (600-900 °C) for 15 min have been investigated quantitatively. Effects of oxidation temperatures on the C-V characteristics, surface morphology, and surface roughness of Sm₂O₃ thin films were reported. The smooth and uniform of Sm₂O₃ thin films were revealed by scanning electron microscope and atomic force microscopy analysis. The sample oxidized at 700 °C demonstrated the smallest AV_PB value, lowest STD value (5.56 × 10¹² cm^-2) and D_it values (~10¹⁴ eV^-1 cm^-2).

Samarium Oxide and Samarium Oxynitride Thin Film as Alternative Gate Oxide on Silicon Substrate

Abstract Aggressive miniaturization that leads to high circuit density is needed for the current mechanism of samarium (MOS) industry. Greater device functionality and performance at lower cost are required. This trend has forced the gate oxide thickness to decrease rapidly. Hence, a physically thicker oxide with the same electrically equivalent thickness is needed to replace SiO2. This article reviewed the limitations of conventional SiO2 gate oxide and the reasons for replacement of SiO2. However, there are numerous materials and processes to be considered before jumping to a decision. The selection criteria and considerations for current gate oxides were described by Ashby’s approach owing to his simple and straightforward type of method. The literature of Sm2O3 and its previous deposition methods were given particular attention in following section. The incorporation of nitrogen within oxide systems was believed to be able to improve and enhance the performance of gate oxides. The physical and electrical properties of samarium oxide and samarium oxynitride were compared. A growth MOS oxide and samarium oxynitride was presented. The electrical properties of oxidized samples were improved by incorporation of N.