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Dive into the research topics where Kikkawa Toshihide is active.

Publication


Featured researches published by Kikkawa Toshihide.


Archive | 1999

Semiconductor device and method for fabricating the same

Kikkawa Toshihide


Archive | 1998

Semiconductor device formed on a substrate having an off-angle surface

Kikkawa Toshihide


Archive | 2013

Semicoductor epitaxy substrate, compound semiconductor device and manufacturing method thereof

Tanaka Takeshi; Kikkawa Toshihide; Moriya Yoshihiko; Otoki Yohei; Imanishi Kenji


Archive | 1999

Semiconductor device formed on a substrate having an off-angle surface and a fabrication process thereof

Kikkawa Toshihide


IEICE Technical Report; IEICE Tech. Rep. | 2009

High-Power GaN-HEMT with High Three-Terminal Breakdown Voltage for W-band Applications

Makiyama Kozo; Ohki Toshihiro; Kanamura Masahito; Joshin Kazukiyo; Imanishi Kenji; Hara Naoki; Kikkawa Toshihide


IEICE Technical Report; IEICE Tech. Rep. | 2009

Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT

Yamada Atsushi; Makiyama Kozo; Ohki Toshihiro; Kanamura Masahito; Joshin Kazukiyo; Imanishi Kenji; Hara Naoki; Kikkawa Toshihide


Archive | 2008

Halbleitervorrichtung und Herstellungsverfahren dafür

Kanamura Masahito; Kikkawa Toshihide


IEICE Technical Report; IEICE Tech. Rep. | 2006

High Power AlGaN/GaN MIS-HEMT

Kanamura Masahito; Kikkawa Toshihide; Iwai Taisuke; Imanishi Kenji; Kubo Tokuro; Joshin Kazukiyo


IEICE Technical Report; IEICE Tech. Rep. | 2014

Correlation of On-Wafer 400V Dynamic Behavior and Trap Characteristics of GaN-HEMTs

Imada Tadahiro; Kikkawa Toshihide; Piedra Daniel; Palacios Tomas


Technical report of IEICE. LQE | 2012

Scattering phenomenon via Non-Lasing band in 2D Photonic Crystal Laser

Ozaki Shiro; Ohki Toshihiro; Kanamura Masahito; Imada Tadahiro; Nakamura Norikazu; Okamoto Naoya; Miyajima Toyoo; Kikkawa Toshihide

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