Kikuo Furukawa

Evaluation of alcoholic hydroxyl derivatives for chemically amplified extreme ultraviolet resist

Extreme ultraviolet (EUV) lithography is the most favorable process as next-generation lithography. For the development of EUV resists, phenolic materials such as poly (4-hydroxystyrene) have been investigated. Phenolic hydroxyl groups of polymers play an important role in acid diffusion, dissolution kinetics, and adhesion to substrates. Besides these important roles, phenolic hydroxyl groups are also an effective proton source in acid generation in EUV resists. However, the roles of alcohol hydroxyl groups have not been well-studied. To clarify the difference between phenolic and alcoholic hydroxyl groups upon exposure to EUV radiation, we synthesized acrylic terpolymers containing alcoholic hydroxyl groups as model photopolymers and exposed the resist samples based on these polymers to EUV radiation. On the basis of the lithographic performances of these resist samples, we evaluated the characteristics of alcoholic hydroxyl groups upon exposure to EUV radiation. We discuss the relationship between the chemical structures of these derivatives and lithographic performance.

Evaluation of hydroxyl derivatives for chemically amplified extreme ultraviolet resist

Extreme ultraviolet (EUV) lithography is the most favorable process for high volume manufacturing of semiconductor devices at 22nm half-pitch and below. Many efforts have revealed that the phenolic hydroxyl groups of polymers are also an effective proton source in acid generation in EUV resists, and the effective proton generation and the control of the generated acid diffusion are required to improve the breakthrough of the resolution - line width roughness - sensitivity (RLS) trade-off. To clarify the lithographic performance of these derivatives, we synthesized the acrylic terpolymers containing phenolic and alcoholic hydroxyl derivatives as model photopolymers and exposed the resist samples based on these polymers to EUV and electron beam (EB) radiation. On the basis of the lithographic performances of these resist samples, we evaluated the characteristics of phenolic and alcoholic derivatives upon exposure to EUV radiation. We discuss the relationship between the chemical structures of these derivatives and lithographic performance.

Evaluation of novel hydrophilic derivatives for chemically amplified EUV resists

EUV lithography is the most favorable process for high volume manufacturing of semiconductor devices beyond 1X nm half-pitch. Many efforts have revealed effective proton sources in acid generation in EUV resists, and the effective proton generation and the control of the generated acid diffusion are required to improve the breakthrough of the resolution － line width roughness － sensitivity(RLS) trade-off. To clarify the lithographic performance of these derivatives, we synthesized the acrylic terpolymers containing novel hydrophilic derivatives as model photopolymers and exposed the resist samples based on these polymers to EUV and EB radiation. On the basis of the lithographic performances of these resist samples, we evaluated the characteristics of hydrophilic derivatives upon exposure to EUV radiation. We discuss the relationship between the chemical structures of these derivatives and lithographic performance.

Evaluation of novel lactone derivatives for chemically amplified EUV resists

EUV lithography is the most favorable process for high volume manufacturing of semiconductor devices beyond 1X nm half-pitch at present. Many efforts have revealed effective proton sources in acid generation in EUV resists, and the effective proton generation and the control of the generated acid diffusion are required to improve the breakthrough of the resolution － line width roughness － sensitivity(RLS) trade-off. To clarify the lithographic performance of these derivatives, we synthesized the acrylic ter/tetrapolymers containing novel lactone derivatives - LCHO and LAATB - as model photopolymers and exposed the resist samples based on these polymers to EUV and EB radiation. On the basis of the lithographic performances of these photoresists, we evaluated the characteristics of lactone derivatives upon exposure to EUV radiation. We discuss the relationship between the chemical structures of these derivatives and lithographic performance.

Development of novel protecting derivatives for chemically amplified extreme ultraviolet resist

EUV lithography is the most favorable process for high volume manufacturing of semiconductor devices below 1X nm half-pitch. Many efforts have revealed that the effective proton generation and the control of the generated acid diffusion are required to improve the breakthrough of the RLS trade-off. For the development of EUV resists, the novel protecting derivatives were designed. To clarify the lithographic performance of these derivatives, we synthesized the acrylic polymers containing these derivatives as model photopolymers and exposed the resist samples based on these polymers to EUV/EB radiation. On the basis of the lithographic performances of these resist sample, we evaluated the characteristics of novel protecting derivatives upon exposure to EUV/EB radiation. We discuss the relationship between the chemical structures of these derivatives and lithographic performance.