Kimberly A. Rosmus

Optical Nonlinearity in Cu2CdSnS4 and α/β-Cu2ZnSiS4: Diamond-like Semiconductors with High Laser-Damage Thresholds

Cu2CdSnS4 and α/β-Cu2ZnSiS4 meet several criteria for promising nonlinear optical materials for use in the infrared (IR) region. Both are air-stable, crystallize in noncentrosymmetric space groups, and possess high thermal stabilities. Cu2CdSnS4 and α/β-Cu2ZnSiS4 display wide ranges of optical transparency, 1.4-25 and 0.7-25 μm, respectively, and have relatively large second-order nonlinearity as well as phase matchability for wide regions in the IR. The laser-damage threshold (LDT) for Cu2CdSnS4 is 0.2 GW/cm(2), whereas α/β-Cu2ZnSiS4 has a LDT of 2.0 GW/cm(2) for picosecond near-IR excitation. Both compounds also exhibit efficient third-order nonlinearity. Electronic structure calculations provide insight into the variation in properties.

Bis[2,2'-(2-amino-ethyl-imino)-di(ethyl-ammonium)] di-μ-sulfido-bis[disulfido-stannate(IV)].

The asymmetric unit of the title compound, (C6H20N4)2[Sn2S6], comprises half of a [Sn2S6]4− anion and a diprotonated tris(2-aminoethyl)amine cation. The anion lies on an inversion center, while the atoms of the cation occupy general positions. An intramolecular N—H⋯N hydrogen bond is observed in the cation. In the crystal, strong N—H⋯S hydrogen bonding between the terminal sulfur atoms of the anion and the protonated amine N atoms of the cations result in a three-dimensional network.