Kimitsugu Saito

Fabrication and characterization of diamond film thermistors

Diamond film thermistors were fabricated from polycrystalline diamond films grown on sintered Si3N4 by microwave plasma chemical vapor deposition. An undoped diamond layer and a zigzag or rectangular pattern of B‐doped semiconducting diamond were successively deposited by a selected‐area deposition technique. For ohmic electrodes, a Ti/Au bilayer was used. The resistance‐temperature characteristics were measured from room temperature to 300 °C. It was found that the temperature coefficient of a diamond film thermistor with a B‐doped diamond layer grown using 0.1 ppm B2H6 as dopant gas was higher than those of platinum resistive temperature detectors and SiC film thermistors.