Kin L. Wong

Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields

Magnetization switching by current-induced spin-orbit torques is of great interest due to its potential applications in ultralow-power memory and logic devices. The switching of ferromagnets with perpendicular magnetization is of particular technological relevance. However, in such materials, the presence of an in-plane external magnetic field is typically required to assist spin-orbit torque-driven switching and this is an obstacle for practical applications. Here, we report the switching of out-of-plane magnetized Ta/Co(20)Fe(60)B(20)/TaO(x) structures by spin-orbit torques driven by in-plane currents, without the need for any external magnetic fields. This is achieved by introducing a lateral structural asymmetry into our devices, which gives rise to a new field-like spin-orbit torque when in-plane current flows in these structures. The direction of the current-induced effective field corresponding to this field-like spin-orbit torque is out-of-plane, facilitating the switching of perpendicular magnets.

Giant electric-field-induced reversible and permanent magnetization reorientation on magnetoelectric Ni/(011) [Pb(Mg1/3Nb2/3)O3](1−x)–[PbTiO3]x heterostructure

We report here an atomic resolution study of the structure and composition of the grain boundaries in polycrystalline Sr0.6K0.4Fe2As2 superconductor. A large fraction of grain boundaries contain amorphous layers larger than the coherence length, while some others contain nanometer-scale particles sandwiched in between amorphous layers. We also find that there is significant oxygen enrichment at the grain boundaries. Such results explain the relatively low transport critical current density (Jc) of polycrystalline samples with respect to that of bicrystal films.We report giant reversible and permanent magnetic anisotropy reorientation in a magnetoelectric polycrystalline Ni thin film and (011)-oriented [Pb(Mg1/3Nb2/3)O3](1−x)–[PbTiO3]x heterostructure. The electric-field-induced magnetic anisotropy exhibits a 300 Oe anisotropy field and a 50% change in magnetic remanence. The important feature is that these changes in magnetization states are stable without the application of an electric field and can be reversibly switched by an electric field near a critical value (±Ecr). This giant reversible and permanent magnetization change is due to remanent strain originating from a non-180° ferroelectric polarization reorientation when operating the ferroelectric substrate in a specific non-linear regime below the electric coercive field.

Robust bi-stable memory operation in single-layer graphene ferroelectric memory

With the motivation of realizing an all graphene-based circuit for low power, we present a reliable nonvolatile graphene memory device, single-layer graphene (SLG) ferroelectric field-effect transistor (FFET). We demonstrate that exfoliated single-layer graphene can be optically visible on a ferroelectric lead-zirconate-titanate (PZT) substrate and observe a large memory window that is nearly equivalent to the hysteresis of the PZT at low operating voltages in a graphene FFET. In comparison to exfoliated graphene, FFETs fabricated with chemical vapor deposited (CVD) graphene exhibit enhanced stability through a bi-stable current state operation with long retention time. In addition, we suggest that the trapping/de-trapping of charge carriers in the interface states is responsible for the anti-hysteresis behavior in graphene FFET on PZT. V C 2011 American Institute of Physics. [doi:10.1063/1.3619816] Graphene is considered to be an exceptional material with high potential for future electronics, owing to its excellent electronic properties; 1 linear electron energy dispersion, and high room temperature mobility. If feasible, an all graphene-based circuit, including logic, analog, and memory devices, would be of great interest to further extend the performance of current Si-based electronics. Among various device applications, graphene based memory structures are still in their infancy in comparison to its logic and analog applications. To date, graphene memory has been demonstrated through chemical modification, 2 filament-type memristor, 3 nanomechanical switch, 4 and graphene FFETs. 5‐7 In graphene FFETs, however, the ambipolar conduction leads to undesirable on/off states for memory applications. Moreover, the absence of an electronic bandgap and controlled doping makes it difficult to resolve such issues. Therefore, a systematic study of graphene FFET is beneficial to realize graphene-based memory structures. In this Letter, we investigate graphene/PZT FFET structures using exfoliated- and CVD-SLG and their mechanism of operation. We show that exfoliated SLG can be optically identified on a PZT substrate and exhibit a hysteresis of the Vshaped conductance with a large memory window at low operating gate voltages. We compare exfoliated- with CVDSLG FFETs and show that devices made of CVD-SLG exhibit a robust bi-stable current state with a long retention time. In order to construct the SLG FFET, we first engineered a ferroelectric substrate to identify SLG. Previously, we have demonstrated that SLG is invisible under the optical micro

Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices

We report giant reversible and permanent magnetic anisotropy reorientation between two perpendicular easy axes in a magnetoelectric polycrystalline Ni thin film and (011) oriented [Pb(Mg1/3Nb2/3)O3](1−x)-[PbTiO3]x (PMN-PT) heterostructure. The PMN-PT is partially poled prior to Ni film deposition to provide a remanent strain bias. Following Ni deposition and full poling of the sample, two giant remanent strains of equal and opposite values are used to reversibly and permanently reorient the magnetization state of the Ni film. These experimental results are integrated into micromagnetic simulation to demonstrate the usefulness of this approach for magnetoelectric based magnetic random access memory.

Electric-field-induced spin wave generation using multiferroic magnetoelectric cells

In this work, we report on the demonstration of voltage-driven spin wave excitation, where spin waves are generated by multiferroic magnetoelectric (ME) cell transducers driven by an alternating voltage, rather than an electric current. A multiferroic element consisting of a magnetostrictive Ni film and a piezoelectric [Pb(Mg1/3Nb2/3)O3](1−x)–[PbTiO3]x substrate was used for this purpose. By applying an AC voltage to the piezoelectric, an oscillating electric field is created within the piezoelectric material, which results in an alternating strain-induced magnetic anisotropy in the magnetostrictive Ni layer. The resulting anisotropy-driven magnetization oscillations propagate in the form of spin waves along a 5 μm wide Ni/NiFe waveguide. Control experiments confirm the strain-mediated origin of the spin wave excitation. The voltage-driven spin wave excitation, demonstrated in this work, can potentially be used for low-dissipation spin wave-based logic and memory elements.

A Surface Coordination Network Based on Substrate‐Derived Metal Adatoms with Local Charge Excess

In the quest for increased control and tuneability of organic patterns at metal surfaces, more and more systems emerge that rely upon coordination of metal adatoms by organic ligands using endgroups such as carbonitriles, amines, and carboxylic acids. Such systems promise great flexibility in the size and geometry of the surface pattern through choice of the ligand shape, the number and arrangement of ligating endgroups, and the nature of the metal centers. Planar (trigonal or square) arrangements of ligands around metal centers occur most commonly as a result of attractive interactions of the ligands with the substrate. In contrast, in the solution phase planar, and in particular trigonal planar, arrangements are quite rare and generally require ligands whose nature (for example bidentate, pincer shape) forces planarity. Given the relatively short history of the field of surface coordination chemistry, compared to its solution-phase counterpart, it is of great interest to know which information can be gleaned from the latter to predict that for the former. Aspects of coordination chemistry at surfaces that have attracted very little attention to date are the effective oxidation state of the metal atom, which is much more straightforward to define in the solution phase, and the response of the coordination center to the presence of ligands at a surface. This study details an effort at gaining some insight into these two aspects, using a coordination system which is particularly facile to prepare, as it relies on substrate atoms as coordination centers, rather than requiring their separate deposition. In particular, this study describes the formation of a hexagonal network of 9,10-anthracenedicarbonitrile (DCA) on Cu(111) by titration of a nearly square molecular arrangement with copper atoms released from the substrate by annealing. We apply a combination of experimental and theoretical methods and juxtapose their results with the molecular patterns formed in the absence of a substrate. Individual DCA molecules adsorb flat onto Cu(111) with the anthracene moiety parallel to the high-symmetry direction of the substrate. Figure 1 shows an STM image of DCA

Domain engineered switchable strain states in ferroelectric (011) [Pb(Mg1/3Nb2/3)O3](1−x)-[PbTiO3]x (PMN-PT, x≈0.32) single crystals

The ferroelectric properties of (011) [Pb(Mg1/3Nb2/3)O3](1−x)-[PbTiO3]x (PMN-PT, x≈0.32) single crystals with focus on piezoelectric strain response were reported. Two giant reversible and stable remanent strain states and tunable remanent strain properties are achieved by properly reversing the electric field from the depolarized direction. The unique piezoelectric strain response, especially along the [100] direction, mainly stems from the non-180° ferroelectric polarization reorientation in the rhombohedral phase crystal structure. Such giant strain hysteresis with tunable remanent strain properties may be useful for magnetoelectric based memory devices as well as a potential candidate for other applications.

Room-Temperature Creation and Spin-Orbit Torque Manipulation of Skyrmions in Thin Films with Engineered Asymmetry

Magnetic skyrmions, which are topologically protected spin textures, are promising candidates for ultralow-energy and ultrahigh-density magnetic data storage and computing applications. To date, most experiments on skyrmions have been carried out at low temperatures. The choice of available materials is limited, and there is a lack of electrical means to control skyrmions in devices. In this work, we demonstrate a new method for creating a stable skyrmion bubble phase in the CoFeB-MgO material system at room temperature, by engineering the interfacial perpendicular magnetic anisotropy of the ferromagnetic layer. Importantly, we also demonstrate that artificially engineered symmetry breaking gives rise to a force acting on the skyrmions, in addition to the current-induced spin-orbit torque, which can be used to drive their motion. This room-temperature creation and manipulation of skyrmions offers new possibilities to engineer skyrmionic devices. The results bring skyrmionic memory and logic concepts closer to realization in industrially relevant and manufacturable thin film material systems.

Proximity Induced High-Temperature Magnetic Order in Topological Insulator - Ferrimagnetic Insulator Heterostructure

Introducing magnetic order in a topological insulator (TI) breaks time-reversal symmetry of the surface states and can thus yield a variety of interesting physics and promises for novel spintronic devices. To date, however, magnetic effects in TIs have been demonstrated only at temperatures far below those needed for practical applications. In this work, we study the magnetic properties of Bi2Se3 surface states (SS) in the proximity of a high Tc ferrimagnetic insulator (FMI), yttrium iron garnet (YIG or Y3Fe5O12). Proximity-induced butterfly and square-shaped magnetoresistance loops are observed by magneto-transport measurements with out-of-plane and in-plane fields, respectively, and can be correlated with the magnetization of the YIG substrate. More importantly, a magnetic signal from the Bi2Se3 up to 130 K is clearly observed by magneto-optical Kerr effect measurements. Our results demonstrate the proximity-induced TI magnetism at higher temperatures, an important step toward room-temperature application of TI-based spintronic devices.

Electric-field control of spin–orbit torque in a magnetically doped topological insulator

Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in various magnetic materials, but the efficient electric-field control of spin-orbit torque (SOT) still remains elusive. Here, we report the effective electric-field control of a giant SOT in a Cr-doped topological insulator (TI) thin film using a top-gate field-effect transistor structure. The SOT strength can be modulated by a factor of four within the accessible gate voltage range, and it shows strong correlation with the spin-polarized surface current in the film. Furthermore, we demonstrate the magnetization switching by scanning gate voltage with constant current and in-plane magnetic field applied in the film. The effective electric-field control of SOT and the giant spin-torque efficiency in Cr-doped TI may lead to the development of energy-efficient gate-controlled spin-torque devices compatible with modern field-effect semiconductor technologies.