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Kobayashi Masaharu

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Publication

Featured researches published by Kobayashi Masaharu.

IEICE Technical Report; IEICE Tech. Rep. | 2018

Effect of multiple stress application in post-fabrication cell stability self-improvement in SRAM cell array

Mizutani Tomoko; Takeuchi Kiyoshi; Saraya Takuya; Kobayashi Masaharu; Hiramoto Toshiro

IEICE Technical Report; IEICE Tech. Rep. | 2017

Experimental Study on Operation Speed of Negative Capacitance FET with Ferroelectric HfO2

Kobayashi Masaharu; Ueyama Nozomu; Jang Kyungmin; Hiramoto Toshiro

IEICE Technical Report; IEICE Tech. Rep. | 2017

Parallel Programming of Non-volatile Power-up States of SRAM

Mizutani Tomoko; Takeuchi Kiyoshi; Saraya Takuya; Shinohara Hirofumi; Kobayashi Masaharu; Hiramoto Toshiro

IEICE Technical Report; IEICE Tech. Rep. | 2017

A Nonvolatile SRAM Integrated with Ferroelectric HfO2 Capacitor for Normally-Off Operation

Kobayashi Masaharu; Ueyama Nozomu; Hiramoto Toshiro

IEEE Transactions on Nanotechnology | 2017

ブースティングトンネルFET性能のための負性静電容量【Powered by NICT】

Kobayashi Masaharu; Jang Kyungmin; Ueyama Nozomu; Hiramoto Toshiro

IEICE Technical Report; IEICE Tech. Rep. | 2016

Performance Enhancement of Tunnel FET by Negative Capacitance

Kobayashi Masaharu; Jang Kyungmin; Ueyama Nozomu; Hiramoto Toshiro

IEICE Technical Report; IEICE Tech. Rep. | 2016

Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm

Mizutani Tomoko; Takeuchi Kiyoshi; Suzuki Ryota; Saraya Takuya; Kobayashi Masaharu; Hiramoto Toshiro

IEICE Technical Report; IEICE Tech. Rep. | 2016

Development of Three-Dimensional Integrated CMOS Image Sensors with Pixel-Parallel Signal Processors by Using Direct Bonding of SOI Layers

Goto Masahide; Honda Yuki; Watabe Toshihisa; Hagiwara Kei; Nanba Masakazu; Iguchi Yoshinori; Saraya Takuya; Kobayashi Masaharu; Higurasgi Eiji; Toshiyoshi Hiroshi; Hiramoto Toshiro

IEEE Conference Proceedings | 2016

エネルギー効率の良いサブ2V動作のための強誘電体HfO_2を用いた二重ゲート負性容量FETのゲートのスタックスケーラビリティ【Powered by NICT】

Jang Kyungmin; Saraya Takuya; Kobayashi Masaharu; Hiramoto Toshiro

IEEE Conference Proceedings | 2016

強誘電HfO_2の負性キャパシタンスFETの偏光制限動作速度に関する実験的研究【Powered by NICT】

Kobayashi Masaharu; Ueyama Nozomu; Jang Kyungmin; Hiramoto Toshiro

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Oda Hidekazu

Mitsubishi

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Yamaguchi Yasuo

Mitsubishi

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