Koji Shiratori

High performance sensing of nitrogen oxides by surface plasmon resonance excited fluorescence of dye-doped deoxyribonucleic acid thin films

Highly sensitive, fast responsive, and highly reversible sensing of nitrogen dioxide, nitric oxide, and nitrous oxide at a ppm-to-sub-ppm level has been achieved by fluorescence measurements upon excitation of various dye-doped deoxyribonucleic acid (DNA) or hydrophobic DNA thin films spincoated on a thin silver film by electric-field-enhanced evanescent light at surface plasmon resonance. The response time, sensitivity, or selectivity was controlled by combination of dyes and matrices. The present result will make a great many contributions to environmental and medical applications.

Low work function nanometer-order controlled transfer mold field-emitter arrays

Extremely sharp and uniform Transfer Metal Mold FEAs with thin film low work function and environment-hard emitter material such as TiN and Au have been fabricated by controlling the thickness of the coated emitter material to realize high efficient, high reliable, low-cost vacuum nanoelectronic devices, and especially aerospace nanodevices for electric propulsion engines [1, 2]. Their nanometer order tip radii from 2.5 to 52.5 nm can be controlled by changing the thickness of emitter materials. Turn-on electric fields of the Au- FEAs from 31.8 to 68.1 V/μm (Emitter/anode distance: less than 30 μm) have been intentionally controlled by changing tip radii. Turn-on field of TiN-FEAs resulted in the low electric field values of 21.7 V/μm.

First ion-pair charge-transfer complex showing a specific CT absorption spectrum with well-resolved vibrational structure in solution

Abstract An ion-pair charge-transfer complex showing a charge-transfer absorption spectrum with a well-resolved vibrational structure of about 1100–1400 cm −1 was first observed for the diquat (2,2′-bipyridinium) salt with tetrakis[3,5-bis(trifluoromethyl)phenyl]borate in 1,2-dimethoxyethane solution at room temperature. It was ascribed to the highly ordered ternary complex of this ion pair in the less polar 1,2-dimethoxyethane solution.

Nanometer-order base length, sharp and uniform field emitter arrays fabricated by transfer mold method

Nanometer-order base length, sharp and uniform field emitter arrays with 64 nm base length and 2.5 nm tip radius, which is the smallest and sharpest FEAs ever reported, have been developed by Transfer Mold method to realize the uniform and stable field emission characteristics.

P1–16: Low operation voltage nanometer base length, sharp and uniform transfer mold field emitter arrays

Low operation voltage nanometer-order base length, extremely sharp and uniform field emitter arrays with 190 nm base length, 3.5 nm tip radius and 8 V/µm turn-on field at the short distance of less than 10 µm between anode and emitter, which is one of the lowest turn-on fields FEAs ever reported and is almost similar to the theoretical limit of 4.5 eV for the molybdenum work function value, have been developed by Transfer Mold method to realize the uniform field emission characteristics.

Uniform and stable emission characteristics for amorphous carbon coated transfer mold nickel field emitter arrays in hash environment

Uniform and stable Transfer Mold FEAs have been developed by coating amorphous carbon (a-C) films with high hardness and chemical inertness on Transfer Mold FEAs to realize uniform and stable field emission characteristics in hash environment such as strong plasma atmosphere in satellite orbits on the earth, field emission display manufacturing process, and so on [1]. Though turn-on fields of Ni-FEAs were increased 100% after O2 radical treatment, those of a-C coated on Ni-FEAs were increased less than 10%. The damage by O2 radical treatment was improved more than 90 % because of coating a-C as a protective layer on Ni-FEA.

Transfer mold FEA using the new fabrication and evaluation method through vacuum in-situ process

The new system for both evaluation and fabrication, which consists of a sputtering system with multi targets, a CVD system, a evaluation chamber combined with the gas ion radical irradiation system for field emission characteristics, and a high vacuum transportation chamber between sputtering/CVD system chamber and evaluation chamber, have been developed to realize the exact evaluation of emission characteristics for FEAs and field emission materials.

Low work function nanometer-order controlled transfer mold field emitter arrays

Extremely sharp and uniform Transfer Metal Mold FEAs with thin film low work function and environment-hard emitter material such as TiN and Au have been fabricated by controlling the thickness of the coated emitter material to realize high efficient, high reliable, low-cost vacuum nanoelectronic devices, and especially aerospace nanodevices for electric propulsion engines [1, 2]. Their nanometer order tip radii from 2.5 to 52.5 nm can be controlled by changing the thickness of emitter materials. Turn-on electric fields of the Au- FEAs from 31.8 to 68.1 V/μm (Emitter/anode distance: less than 30 μm) have been intentionally controlled by changing tip radii. Turn-on field of TiN-FEAs resulted in the low electric field values of 21.7 V/μm.