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Dive into the research topics where Koji Tominaga is active.

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Featured researches published by Koji Tominaga.


Laser Diode Technology and Applications IV | 1992

Fundamental transverse-mode 150-mW semiconductor laser for an SHG light source

Keiichi Yodoshi; Norio Tabuchi; Atsushi Tajiri; Kimihide Minakuchi; Yasuyuki Bessho; Koji Komeda; Yasuaki Inoue; Koji Tominaga; Takao Yamaguchi

A highly reliable, 150 mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed. This device has a 0.7 jim thick p-cladding layer, a 900 jim long cavity length, and current-blocking regions near the cavity facets for high output power and high reliability. Stable, fundamental transverse mode and single longitudinal mode operation were obtained up to 230 mW, and the maximum output power was 350 mW under CW operation. Stable operation under 150 mW at 50°C was confirmed for more than 2000 hrs.


Optics, Electro-Optics, and Laser Applications in Science and Engineering | 1991

100 mW, Four-beam Individually Addressable Monolithic ALGaAs Laser-diode Arrays

Takao Yamaguchi; Keiichi Yodoshi; Kimihide Minakuchi; Norio Tabuchi; Yasuyuki Bessho; Yasuaki Inoue; Koji Komeda; Kazushi Mori; Atsushi Tajiri; Koji Tominaga

Four-beam individually addressable monolithic AlGaAs laser-diode arrays have been developed in which each laser element can emit over 100 mW of output power in single-mode operation. The structural features of this laser include current-blocking regions near the facets and a long cavity length to obtain higher power, as well as a cBN heatsink and a 70 micrometers - thick laser chip to improve thermal crosstalk between laser elements. The maximum output power of each laser element is about 200 mW and the lasing wavelength is about 834 nm. Thermal crosstalk between 100 micrometers -spaced neighboring elements is only 1.0% at 100 mW.


Archive | 2000

Nitride-based semiconductor element and its manufacturing method

Masayuki Hata; Tatsuya Kunisato; Koji Tominaga; 浩司 冨永; 竜也 國里; 雅幸 畑


Electronics Letters | 1992

Room-temperature CW operation of 610 nm band AlGaInP strained multiquantum well laser diodes with multiquantum barrier

Hiroki Hamada; Koji Tominaga; Masayuki Shono; Shoji Honda; Keiichi Yodoshi; Takao Yamaguchi


Archive | 2002

Nitride-based semiconductor element

Masayuki Hata; Nobuhiko Hayashi; Koji Tominaga; Yasuhiko Nomura; Tatsuya Kunisato; Hiroki Ohbo


Archive | 2003

Element having microstructure and manufacturing method thereof

Kazushi Mori; Mitsuaki Matsumoto; Koji Tominaga; Atsushi Tajiri; Koutarou Furusawa


Archive | 2005

Method of forming grating microstrutures by anodic oxidation

Kazushi Mori; Mitsuaki Matsumoto; Koji Tominaga; Atsushi Tajiri; Koutarou Furusawa


Archive | 2003

Component with fine structure and its mfg. method

Kazushi Mori; Kosei Matsumoto; Koji Tominaga


Archive | 2005

Holographic optical element, position shift detecting apparatus, optical pickup apparatus, optical recording medium drive and method of fabricating holographic optical element

Kazushi Mori; Mitsuaki Matsumoto; Koji Tominaga; Atsushi Tajiri; Minoru Sawada


Archive | 2004

Wave plate and optical device using the same

Kazushi Mori; Shingo Kameyama; Hitoshi Hirano; Koutarou Furusawa; Koji Tominaga; Masayuki Shono

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