Konstantin D. Stefanov

Monolithic Active Pixel Sensors (MAPS) in a quadruple well technology for nearly 100% fill factor and full CMOS pixels

In this paper we present a novel, quadruple well process developed in a modern 0.18 μm CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50 μm pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency.

A novel CMOS monolithic active pixel sensor with analog signal processing and 100% fill factor

We have designed and fabricated a CMOS monolithic active pixel sensor (MAPS) in a novel 0.18 micrometer image-sensor technology (INMAPS) which has a 100% fill factor for charged particle detection and full CMOS electronics in the pixel. The first test sensor using this technology was received from manufacture in July 2007. The key component of the INMAPS process is the implementation of a deep p-well beneath the active circuits. A conventional MAPS design for charged-particle imaging will experience charge sharing between the collection diodes and any PMOS active devices in the pixel which can dramatically reduce the efficiency of the pixel. By implementing a deep p-well, the charge deposited in the epitaxial layer is reflected and conserved for collection at only the exposed collection diode nodes. We have implemented two pixel architectures for charged particle detection. The target application for these pixels is for the sensitive layers of an electromagnetic calorimeter (ECAL) in an international linear collider (ILC) detector. Both pixel architectures contain four n- well diodes for charge-collection; analog front-end circuits for signal pulse shaping; comparator for threshold discrimination; digital logic for threshold trim adjustment and pixel masking. Pixels are served by shared row-logic which stores the location and time-stamp of pixel hits in local SRAM, at the bunch crossing rate of the ILC beam. The sparse hit data are read out from the columns of logic after the bunch train. Here we present design details and preliminary results.

Multi-level parallel clocking of CCDs for: improving charge transfer efficiency, clearing persistence, clocked anti-blooming, and generating low-noise backgrounds for pumping

A multi-level clocking scheme has been developed to improve the parallel CTE of four-phase CCDs by suppressing the effects of traps located in the transport channel under barrier phases by inverting one of these phases throughout the transfer sequence. In parallel it was apparent that persistence following optical overload in Euclid VIS detectors would lead to undesirable signal released in subsequent rows and frames and that a suitable scheme for flushing this signal would be required. With care, the negatively biased electrodes during the multi-level transfer sequence can be made to pin the entire surface, row-by-row, and annihilate the problematic charges. This process can also be extended for use during integration to significantly reduce the unusable area of the detector, as per the clocked anti-blooming techniques developed many years ago; however, with the four-phase electrodes architecture of modern CCDs, we can take precautionary measures to avoid the problem of charge pumping and clock induced charge within the science frames. Clock induced charge is not all bad! We also propose the use of on-orbit trap-pumping for Euclid VIS to provide calibration input to ground based correction algorithms and as such a uniform, low noise background is require. Clock induced charge can be manipulated to provide a very suitable, low signal and noise background to the imaging array. Here we describe and present results of multi-level parallel clocking schemes for use in four-phase CCDs that could improve performance of high precision astronomy applications such as Euclid VIS.

Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD

Results of detailed simulations of the charge transfer inefficiency of a prototype serial readout CCD chip are reported. The effect of radiation damage on the chip operating in a particle detector at high frequency at a future accelerator is studied, specifically the creation of two electron trap levels, 0.17 eV and 0.44 eV below the bottom of the conduction band. Good agreement is found between simulations using the ISE-TCAD DESSIS program and an analytical model for the former level but not for the latter. Optimum operation is predicted to be at about 250 K where the effects of the traps is minimal; this being approximately independent of readout frequency in the range 7-50 MHz. This work has been carried out within the Linear Collider Flavour Identification (LCFI) collaboration in the context of the International Linear Collider (ILC) project.

Design and characterisation of the new CIS115 sensor for JANUS, the high resolution camera on JUICE

JUICE, the Jupiter Icy Moon Explorer, is a European Space Agency L-class mission destined for the Jovian system. Due for launch in 2022, it will begin a science phase after its transit to Jupiter that will include detailed investigations of three of the Galilean moons: Ganymede, Callisto and Europa. JUICE will carry payloads to characterise the Jovian environments, divided into in situ, geophysical and remote sensing packages. A key instrument in the remote sensing package is JANUS, an optical camera operating over a wavelength range of 350 nm to 1064 nm. JANUS will be used to study the external layers of Jupiter’s atmosphere, the ring system and the planetary bodies. To achieve the science goals, resolutions of better than 5 m per pixel are required for the highest resolution observations during the 200 km altitude orbit of Ganymede, whilst the system is operated with a signal to noise ratio of better than 100. Jupiter’s magnetic field is a dominant object in the solar system, trapping electrons and other charged particles leading to the radiation environment around Jupiter being very hostile, especially in the regions closest to Jupiter in the Ganymede orbit. The radiation tolerance of the focal plane detector in JANUS is therefore a major concern and radiation testing is vital to confirm its expected performance after irradiation will meet requirements set by the science goals. JANUS will be using a detector from e2v technologies plc, the CMOS Imaging Sensor 115 (CIS115), which is a device manufactured using 0.18 μm Imaging CMOS Process with a 2000 by 1504 pixel array each 7 μm square. The pixels have a 4T pinned photodiode pixel architecture, and the array is read out through four differential analogue outputs. This paper describes the preliminary characterisation of the CIS115, and results obtained with the CIS107 precursor sensor.

Point-spread function and photon transfer of a CCD for space-based astronomy

A front-illuminated development Euclid charge-coupled device (CCD) is tested to observe the CCD point-spread function (PSF) relative to signal size using a single-pixel photon transfer curve (SP-PTC) technique. In the process of generating a SP-PTC charge redistribution effects were observed. In attempting to show that charge redistribution can be caused by exposing a charge-populated well in the CCD array to further illumination, excess charge became apparent in recorded data. Excess charge is suggested to be proportionally generated in the CCD array if existing charge is subjected to further illumination before transfer and readout. The construction of an optical test bench and CCD operating variables are discussed alongside systematic error concerns and mitigation techniques.

Design and performance of a CMOS study sensor for a binary readout electromagnetic calorimeter

We present a study of a CMOS test sensor which has been designed, fabricated and characterised to investigate the parameters required for a binary readout electromagnetic calorimeter. The sensors were fabricated with several enhancements in addition to standard CMOS processing. Detailed simulations and experimental results of the performance of the sensor are presented. The sensor and pixels are shown to behave in accordance with expectations and the processing enhancements are found to be essential to achieve the performance required.

Radiation Hardness of CCD Vertex Detectors for the ILC

Results of detailed simulations of the charge transfer inefficiency of a prototype CCD chip are reported. The effect of radiation damage in a particle detector operating at a future accelerator is studied by examining two electron trap levels, 0.17 eV and 0.44 eV below the bottom of the conduction band. Good agreement is found between simulations using the ISE-TCAD DESSIS program and an analytical model for the 0.17 eV level. Optimum operation is predicted to be at about 250 K where the effects of the traps is minimal which is approximately independent of readout frequency. This work has been carried out within the Linear Collider Flavour Identification (LCFI) collaboration in the context of the International Linear Collider (ILC) project.

Fully Depleted Pinned Photodiode CMOS Image Sensor With Reverse Substrate Bias

A new pixel design using fully depleted pinned photodiode (PPD) in a 180-nm CMOS image sensor (CIS) process has been developed and the first experimental results from a test chip are presented. The sensor can be fully depleted by means of reverse bias applied to the substrate, and the principle of operation is applicable to very thick sensitive volumes. Additional n-type implants under the in-pixel p-wells have been added to the manufacturing process in order to eliminate the large parasitic substrate current that would otherwise be present in a normal device. The new design shows the same electro-optical performance as the PPD pixel it is based on, and can be fully depleted without significant leakage currents. This development has the potential to greatly increase the quantum efficiency of scientific PPD CIS at near-infrared and soft X-ray wavelengths.

A Statistical Model for Signal-Dependent Charge Sharing in Image Sensors

A Monte Carlo model based on the signal-dependent charge sharing mechanism during charge collection has been developed to explain the nonlinearity of the photon transfer curve (PTC) in image sensors. The model is based on tracing of individual electrons generated by Poisson-distributed photons and describes the PTC nonlinearity as a process with sub-Poisson variance, with an excellent qualitative agreement with the experimental data. A new PTC curve fitting formula is proposed, considering this nonlinearity. The new formula is an excellent fit to the data, does not require selection of linear section of data points and allows more robust calculation of the system conversion gain.