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Publication
Featured researches published by Kosuke Nishimura.
international conference on indium phosphide and related materials | 2001
Munefumi Tsurusawa; Kosuke Nishimura; Masashi Usami
We have successfully confirmed the reduction of the pattern effect in semiconductor optical amplifier (SOA)-based all-optical switches at 40 Gb/s operation, utilizing the transparent CW assist light which clamped the gain profile of the SOA. Error-free operation without an error floor was obtained with a power penalty of 1 dB compared with the input data stream. The receiver sensitivity improvement of 2.3 dB was confirmed at BER=10/sup -9/. The scheme for the reduction of the pattern effect is an attractive method for high-speed operation because the required signal powers can be small.
international conference on indium phosphide and related materials | 2003
Kosuke Nishimura; Ryo Inohara; Munefumi Tsurusawa; Masashi Usami
Cross-absorption and cross-phase modulation in an InGaAsP/InP electroabsorption modulator (EAM) were experimentally analyzed. The patterning effect of the EAM-based delayed-interferometric wavelength converter was studied by numerical simulation based on the experimental results.
international conference on indium phosphide and related materials | 2004
Kosuke Nishimura; T. Asai; Tomonori Yazaki; Ryo Inohara; Masashi Usami
Cross-gain and cross-phase modulation induced in semiconductor optical amplifier depending on the propagation direction of control pulse was investigated numerically and experimentally.
international conference on indium phosphide and related materials | 2003
Tomonori Yazaki; Ryo Inohara; Munefumi Tsurusawa; Kosuke Nishimura; Masashi Usami
The cross gain modulation and its recovery time in the SOAs with the various lengths were experimentally investigated. It was found that these values strongly depended on the device length.
international conference on indium phosphide and related materials | 2002
Kosuke Nishimura; Munefumi Tsurusawa; Masashi Usami
A new optical 3R regeneration technique, which is referred to as RF-XAM 3R regeneration, that requires only one electroabsorption modulator (EAM) for both clock recovery and gating was proposed for the first time. The idea was experimentally verified at 20 Gbit/s and we have confirmed that the RF-XAM 3R regenerator possesses retiming function. The simple configuration of our proposed scheme is expected to contribute not only to reduction in size and power consumption, but also high stability and easy tunability.
international conference on indium phosphide and related materials | 2004
Tomonori Yazaki; Ryo Inohara; Kosuke Nishimura; Masashi Usami
We experimentally demonstrated 10 Gbit/s XGM based wavelength conversion by using cascaded SOAs adapting intentional loss in-between. The input power dynamic range toward lower level side was increased from 0.8 dB to 1.8 dB by cascading SOAs with the intermediate loss.
Archive | 2002
Kosuke Nishimura; Masashi Usami; Hidenori Takahashi
Archive | 2001
Masashi Usami; Kosuke Nishimura; Munefumi Tsurusawa
Archive | 2003
Masashi Usami; Kosuke Nishimura
Archive | 2003
Masashi Usami; Kosuke Nishimura