Krishna C. Mandal

Optical properties of Nd 3+ - and Tb 3+ -doped KPb 2 Br 5 and RbPb 2 Br 5 with low nonradiative decay

We report on the optical properties of Nd3+- and Tb3+-doped low-phonon-energy moisture-resistant host crystals, potassium lead bromide (KPb2Br5), and rubidium lead bromide (RbPb2Br5), including absorption, emission, and emission lifetime measurements as well as calculations of the multiphonon decay rate, Judd–Ofelt parameters, and radiative transition probabilities for relevant (laser) transitions in these crystals. The RE3+:MPb2Br5 (M=Rb, K) crystal is a promising candidate for long-wavelength infrared applications because of the low phonon frequencies and other favorable features.

Low-cost technique for preparing n-Sb2S3/p-Si heterojunction solar cells

The first fabrication of low cost n‐Sb2S3/p‐Si heterojunction solar cells by chemical deposition method is reported. It is observed that in the case of n‐Sb2S3 films chemically deposited with silicotungstic acid on p‐Si and annealed, the photovoltaic properties of the n‐Sb2S3/p‐Si junctions are considerably improved. Under AM1 illumination, the improved junction exhibited an efficiency (η) of ∼5.19% on an active area of 0.05 cm2 without any antireflection coating whereas the n‐Sb2S3 films deposited without STA on p‐Si showed η=1.03%.

Investigation of CdZnTe crystal defects using scanning probe microscopy

Surface electronic properties of Cd0.9Zn0.1Te (CZT) crystals have been characterized using scanning spreading resistance microscopy (SSRM) and correlated with IR transmittance maps. SSRM performed on CZT samples showed excellent correlation with Te precipitates determined from infrared images. The average probe current was observed to be more than two orders of magnitude higher for the sample with higher Te precipitates. Stationary probe current-voltage relationship was found to be exponential and was modeled based on thermionic emission theory. Based on this model, the surface barriers of the CZT samples were found to be significantly different, which was confirmed independently from Kelvin probe measurements.

III–VI Chalcogenide Semiconductor Crystals for Broadband Tunable THz Sources and Sensors

The layered chalcogenide semiconductor GaSe has been grown under various crystal growth conditions for optimum performance for tunable terahertz (THz) wave generation and broadband THz detection. Low-temperature photoluminescence (PL), Raman spectroscopy, optical absorption/transmission, electrical charge transport property measurements, and THz time-domain spectroscopy (TDS) have been used to characterize the grown crystals. It is observed that indium doping enhances hardness of the grown GaSe crystals, which is very useful for processing and fabricating large-area devices. GaSe crystals have demonstrated promising characteristics with good optical quality (absorption coefficient les0.1 cm-1 in the spectral range of 0.62-18 mum), high dark resistivity (ges109 Omega cm), wide bandgap (2.01 eV at 300 K), good anisotropic (parand perp) electrical transport properties (mue/h, taue/h, and mutaue/h) and long-term stability. The THz emission measurements have shown that the GaSe crystals are highly efficient for broadband tunable THz sources (up to 40 THz), and sensors (up to 100 THz). Additionally, new THz frequencies (0.1-3 THz) have been observed for the first time from an anisotropic binary and a ternary semiconductor crystal. Details of characterizations as well as optimum crystal growth conditions including simulation and computer modeling are described in this paper.

Low Energy X-Ray and

Schottky barrier diode (SBD) radiation detectors have been fabricated on n-type 4H-SiC epitaxial layers and evaluated for low energy x- and γ-rays detection. The detectors were found to be highly sensitive to soft x-rays in the 50 eV to few keV range and showed 2.1 % energy resolution for 59.6 keV gamma rays. The response to soft x-rays for these detectors was significantly higher than that of commercial off-the-shelf (COTS) SiC UV photodiodes. The devices have been characterized by current-voltage (I-V) measurements in the 94-700 K range, thermally stimulated current (TSC) spectroscopy, x-ray diffraction (XRD) rocking curve measurements, and defect delineating chemical etching. I-V characteristics of the detectors at 500 K showed low leakage current ( nA at 200 V) revealing a possibility of high temperature operation. The XRD rocking curve measurements revealed high quality of the epitaxial layer exhibiting a full width at half maximum (FWHM) of the rocking curve ~3.6 arc sec. TSC studies in a wide range of temperature (94-550 K) revealed presence of relatively shallow levels ( ~0.25 eV) in the epi bulk with a density ~7×1013 cm-3 related to Al and B impurities and deeper levels located near the metal-semiconductor interface.

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Radiation detectors have been fabricated on 8 mm × 8 mm substrates, ~390 μm in thickness, diced from a (0001) 4H-SiC semi-insulating (SI) wafer (≥ 1012 Ohm-cm). The crystals used for detector fabrication have been characterized by x-ray diffraction (XRD), electron beam induced current (EBIC), chemical etching, cross-polarized imaging, and Raman spectroscopy. Current-voltage (I-V) characteristics showed very low leakage current (≤ 50 pA at -800 V) and the capability of detectors operation ≥ 470 K. EBIC investigations revealed that the screw dislocations produce dark EBIC contrast indicating high leakage current in the defective regions. Thermally stimulated current (TSC) measurements and high temperature resistivity measurements revealed deep level centers with activation energies 1.1-1.2 eV, and 1.56 eV. The TSC peak at ~460 K associated with the ~1.2 eV center was much stronger than the other high temperature peaks (e.g., 370 K due to vanadium impurity, 0.95 eV below of conduction band edge), indicating that this level along with the 1.56 eV level should dominate in controlling the resistivity and carrier lifetime in the studied 4H-SiC. Based on the literature data, we associate these centers with intrinsic defects and/or V-related complex. Nuclear detection measurements on the single-element SiC detectors with 241Am X-γ ray source clearly detected 59.6 keV and other low energy x-rays.

-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer

The dielectric function and momentum relaxation time of carriers for a single-crystal GaSe were investigated using terahertz time-domain spectroscopy over the frequency range from 0.4to2.4THz. The key parameters determined from THz data using the Drude model are: the plasma frequency ωp=2.6±0.2THz, the average momentum relaxation time ⟨τ⟩=56±2fs, and the mobility μ=89cm2∕Vs for electrons. The THz absorption spectrum showed resonance structures attributed to the difference frequency combinations associated with acoustical and optical phonons.

Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors

Spectroscopic performance of Schottky barrier alpha particle detectors fabricated on 50 μm thick n-type 4H-SiC epitaxial layers containing Z1/2, EH5, and Ci1 deep levels were investigated. The device performance was evaluated on the basis of junction current/capacitance characterization and alpha pulse-height spectroscopy. Capacitance mode deep level transient spectroscopy revealed the presence of the above-mentioned deep levels along with two shallow level defects related to titanium impurities (Ti(h) and Ti(c)) and an unidentified deep electron trap located at 2.4 eV below the conduction band minimum, which is being reported for the first time. The concentration of the lifetime killer Z1/2 defects was found to be 1.7 × 1013 cm−3. The charge transport and collection efficiency results obtained from the alpha particle pulse-height spectroscopy were interpreted using a drift-diffusion charge transport model. Based on these investigations, the physics behind the correlation of the detector properties viz., ...

Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal

Electron-hole pair creation energy (e) has been determined from alpha spectroscopy using 4H-SiC epitaxial layer Schottky detectors and a pulser calibration technique. We report an experimentally obtained e value of 7.28 eV in 4H-SiC. The obtained e value and theoretical models were used to calculate a Fano factor of 0.128 for 5.48 MeV alpha particles. The contributions of different factors to the ultimate alpha peak broadening in pulse-height spectra were determined using the calculated e value and Monte-Carlo simulations. The determined e value was verified using a drift-diffusion model of variation of charge collection efficiency with applied bias.

Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

Deep levels of undoped GaTe and indium-doped GaTe crystals are reported for samples grown by the vertical Bridgman technique. Schottky diodes of GaTe and GaTe:In have been fabricated and characterized using current-voltage, capacitance-voltage, and deep-level transient spectroscopy (DLTS). Three deep levels at 0.40, 0.59, and 0.67 eV above the valence band were found in undoped GaTe crystals. The level at 0.40 eV is associated with the complex consisting of gallium vacancy and gallium interstitial (VGa-Gai), the level at 0.59 eV is identified as the tellurium-on-gallium antisite (TeGa), and the last one is tentatively assigned to be the doubly ionized gallium vacancy (VGa∗). Indium isoelectronic doping is found to have noticeable impacts on reducing the Schottky saturation current and suppressing the densities of TeGa and VGa∗ defects. The peak which dominated the DLTS spectrum of GaTe:In is assigned to be the defect complex consisting of VGa and indium interstitial (Ini). Low-temperature photoluminescenc...