Krishna Pande

A W-band integrated power module using MMIC MESFET power amplifiers and varactor doublers

A high-performance integrated power module using U-band MMIC MESFET power amplifiers in conjunction with W-band MMIC high efficiency varactor doublers has been developed for millimeter-wave system applications. The authors present the design, fabrication, and performance of this W-band integrated power module. Measurement results show an output power of 90 mW with an overall associated gain of 29.5 dB at 94 GHz. A saturated power of over 95 mW was also achieved. These results represent the highest reported power and gain at W-band using MESFET and varactor frequency-doubling technologies. This integrated power module is suitable for future 94-GHz missile seeker applications. >

U-band MMIC HBT DRO

A 46.3 GHz dielectric resonator stabilized oscillator (DRO) using AlGaAs/GaAs heterojunction bipolar transistor (HBT) and monolithic microwave integrated circuit (MMIC) technology has been designed, fabricated, and characterized. The oscillator exhibits 2.6 dBm output power with 5.8% dc-to-RF efficiency and less than /spl minus/132 dBc/Hz phase noise at 5 MHz offset from the carrier. To our knowledge, this is the highest frequency oscillator ever reported using HBT devices and MMIC technology. >

A high-performance 94-GHz MMIC doubler

A 94-GHz monolithic microwave integrated circuit (MMIC) frequency doubler with 25% efficiency and 65-mW output power has been developed. Variations in the Schottky barrier varactor diodes performance as a doubler with its geometry and doping profile were analyzed for optimum efficiency and output power. Optimum doubler performance was obtained as a consequence of use of the optimized diode parameters resulting from this analysis. Measured results of the diode parameters as well as the doubler response showed excellent agreement with the analysis. The doubler exhibits better performance than those reported in the literature at similar frequencies using an MMIC approach. >

Rigorous analysis and design of a high-performance 94 GHz MMIC doubler

A 94-GHz monolithic microwave integrated circuit (MMIC) frequency doubler with 25% efficiency and 65-mW output power is discussed. Variations in the Schottky-barrier varactor diodes performance as a doubler with its geometry and doping profile are analyzed for optimum efficiency and output power. Optimum doubler performance is obtained by use of the optimized diode parameters resulting from this analysis. Measured diode parameters as well as doubler responses show excellent agreement with the analysis. >

Rigorous design of a 94 GHz MMIC doubler

A 94-GHz monolithic microwave integrated circuit (MMIC) frequency doubler with 25% efficiency and 65 mW output power is discussed. Variation in the diodes performance as a doubler with its geometry and doping profile are analyzed for optimum efficiency and output power. Optimum doubler performance is obtained by use of the optimized diode parameters resulting from this analysis. Measured results of the diode parameters as well as doubler response show excellent agreement with the analysis. The doubler exhibits better performance than those reported in the literature at similar frequencies using an MMIC approach.<<ETX>>

A 0.5-watt 47-GHz power amplifier using GaAs monolithic circuits

47-GHz monolithic microwave integrated circuit (MMIC) power amplifier chips have been developed using 0.35-mm gate-length molecular beam epitaxial (MBE) MESFET technology. The amplifier chips have been assembled with nominal output power of 0.4 W and 15 dB of gain. The saturated output power of this amplifier exceeded 0.5 W. This amplifier has an application as a driver for a monolithic doubler circuit to reliably produce greater than 80 mW of output power at 94 GHz for missile seeker applications. >

A high-performance W-band integrated source module using GaAs monolithic circuits

A high-performance integrated source module using a U-band MMIC HBT DRO and a U-hand MMIC MESFET power amplifier in conjunction with a W-band MMIC high-efficiency varactor doubler has been developed for millimeter-wave system applications. This paper describes the development and performance of this W-hand integrated source module. Measured results of the complete integrated source module show an output power of 10.6 dBm at 92.6 GHz and less than -126 dBc/Hz phase noise at 5 MHz offset from the carrier. These results represent the highest reported power and phase noise achieved at W-band using HBT, MESFET, and varactor frequency-doubling technologies.<<ETX>>

Millimeter wave monolithic components for sensor applications

State-of-the-art millimeter-wave monolithic power components have been developed for Ka- and W-band sensor system applications. This paper presents the development and performance of Ka- and W-band power MMIC components. At W-band, the integrated power module using U-band MMIC power amplifiers in conjunction with W-band MMIC doubler shows the highest reported power (95 mW) and gain at 94 GHz. At Ka-band, a four-stage power amplifier exhibited 14.6 dB of linear gain and 300 mW saturated output power at 35 GHz. These power modules are highly stable and suitable for the future millimeter-wave sensor system applications, such as PCN and collision avoidance sensors.