Krzysztof Mars

Investigation on pulse shaping in fiber laser hybrid mode-locked by Sb 2 Te 3 saturable absorber

We report a study on a hybrid mode-locked fiber laser with two saturable absorbers: slow and fast, integrated in a single device. Amorphous antimony telluride (Sb(2)Te(3)) layer was deposited on side-polished fiber to form the slow saturable absorber due to the third order nonlinear susceptibility of Sb(2)Te(3). Additionally, an unsymmetrical design of the device causes polarization-dependent losses and together with polarization controller allows to use a nonlinear polarization evolution to form the artificial fast saturable absorber. Sub-200 fs soliton pulses with 0.27 nJ of pulse energy were generated in the hybrid mode-locked Er-doped fiber laser. Differences in the dynamics of mode-locked laser are further investigated with the use of slow and fast saturable absorbers solely, and compared with the hybrid device. Joint operation of two saturable absorbers enhances the laser performance and stability. The conducted experiments allowed to define roles of each mechanism on the pulse shaping in the laser cavity.

Sb 2 Te 3 -deposited D-shaped fiber as a saturable absorber for mode-locked Yb-doped fiber lasers

We present a study on a antimony telluride (Sb2Te3)-deposited side-polished fiber device as a saturable absorber for Yb-doped mode-locked fiber lasers. Thin layers of Sb2Te3 with variable length were deposited by a pulsed magnetron sputtering technique. We demonstrate measured characteristics of the device and show that it can be treated as a hybrid component - tunable polarizer with saturable absorption properties. The polarizing extinction ratio varies from 1.5 dB up to 17.1 dB with increasing length of the deposition. The fiber components were employed in all-normal Yb-doped fiber cavities. All devices enabled for mode-locked operation by means of hybrid mode-locking or nonlinear polarization evolution mechanism. In particular, the laser with 2 mm long Sb2Te3 absorber emitted 5.9 ps pulses with 4 mW of average output power.

All-polarization-maintaining-fiber laser Q-switched by evanescent field interaction with Sb2Te3 saturable absorber

Abstract. We report on the generation of 152-nJ Q-switched pulses in all-polarization-maintaining Er-doped fiber laser. The laser is passively modulated by the antimony telluride (Sb2Te3) layer sputtered on a surface of the side-polished fiber in order to exploit the evanescent field interaction in optically nonlinear material. The laser cavity is designed in an extremely simple way comprising, in addition to fibers, only one component and the saturable absorber, forming a robust, compact, and stable source of short pulses. The repetition rate might be tuned from 42 kHz up to 132 kHz. The shortest recorded pulse duration was the 857 ns.

Comparing Doping Methodologies in Mg 2 Si/AgMg System

Morphological and optical characterizations for the Mg2Si samples doped with Ag are presented. Two different doping methodologies with silver, namely in situ and ex situ doping, were studied for the case of Mg2Si of self-propagating high-temperature synthesis. Electron microscopy measurements in both scanning and transmission configurations verified the presence of AgMg precipitates embedded in the Mg2Si matrix and similar results were also yielded by FTIR spectroscopy. Finally, the dependence of silver content in both forms of dopant and inter-metallic constituent is studied upon doping technology.

All-normal dispersion Yb-doped fiber laser mode-locked by Sb2Te3 topological insulator

In this paper we demonstrate a preliminary work done on employing antimony telluride (Sb2Te3) topological insulator as a saturable absorber for Yb-doped fiber lasers. The material was deposited onto a side-polished fiber by means of a pulsed magnetron sputtering technique. Fabricated absorber was implemented in an all-normal dispersion cavity and allowed for self-starting dissipative soliton generation. The laser emitted stable pulse train at a repetition rate of 17.07 MHz with 4.25 nm broad output spectrum centered around 1039.4 nm. Average output power amounted to 0.54 mW with 32 pJ pulse energy.

Tm:GdVO4 microchip laser Q-switched by a Sb2Te3 topological insulator

We report on the first application of a topological insulator based on antimony telluride (Sb2Te3) as a saturable absorber (SA) in a bulk microchip laser. The transmission-type SA consisted of a thin film of Sb2Te3 (thickness: 3 nm) deposited on a glass substrate by pulsed magnetron sputtering. The saturable absorption of the Sb2Te3 film was confirmed for ns-long pulses. The microchip laser was based on a Tm:GdVO4 crystal diode-pumped at ∼802 nm. In the continuous-wave regime, this laser generated 3.54 W at 1905-1921 nm with a slope efficiency η of 37%. The Q-switched laser generated a maximum average output power of 0.70 W at 1913 nm. The pulse energy and duration were 3.5 μJ and 223 ns, respectively, at a repetition rate of 200 kHz. The Sb2Te3 SAs are promising for passively Q-switched waveguide lasers at ∼2 μm.