Krzysztof Paprocki

RHEED intensity oscillations observed during the growth of YSi2 − x on Si(111) substrates

Abstract For the first time reflection high-energy electron diffraction intensity oscillations were observed during reactive deposition epitaxy (RDE) growth of YSi2 − x (x ≅0.3) on the Si(111) surface. The YSi2 − x crystallographic structure consists of Y planes alternating with Si planes parallel to the Si(111) substrate planes. The intensity of the reflected beam is calculated by solving the one-dimensional Schrodinger equation. A birth-death model was used for the growth simulation in order to investigate fundamental behaviours of reflectivity change during the growth of YSi2 − x on the Si(111) surface.

Photoluminescence study of proton-implanted CdTe and ZnTe

Abstract We present a detailed account of photoluminescence spectroscopy of low-energy proton-implanted CdTe and ZnTe. For CdTe, our spectra are much more complicated than those reported in the literature, while for ZnTe we only observe lowered intensities of all photoluminescence lines. Our results show that hydrogen-defect interactions and their influence on photoluminescence are much more complicated than previously proposed.

Direct observation of rare-earth silicide epilayer formation by RHEED technique

Abstract The solid phase reaction of yttrium thin film and silicon substrate was investigated in situ with help of RHEED technique. For the first time, we have measured directly yttrium silicide formation temperature which can be as low as 120 °C for a thin (60 A) metal layer deposited on a Si(111) substrate. For this purpose, we developed a new experimental technique. A study of the growth of thin (10–150 A) silicon overlayers on yttrium and dysprosium silicide films epitaxially grown on Si(111) was also made. In this paper, an in situ reflection high energy electron diffraction (RHEED) pattern and also azimuthal plot investigation of Si/RE-silicide/Si double heterostructures grown by solid phase epitaxy and reactive deposition method are presented.

Epitaxial silicides: new results from RHEED analysis

Abstract The growth kinetics and surface structure of Y, Dy and Co suicides are examined using a new reflection high-energy electron diffraction (RHEED) method. We prepared epitaxial silicide films on (111) Si by (1) deposition of metal and contact reaction (solid phase epitaxy), and (2) deposition of metal on hot substrates (reactive deposition). Subsequent annealing at temperatures up to 600 °C yielded monocrystalline, continuous layers, whose properties were examined by means of RHEED (in situ) and X-ray diffraction and scanning electron microscopy (ex situ). Method 2 was shown to give better results. We have measured directly the yttrium silicide formation temperature which can be as low as 120 °C for thin (60 A) metal layer deposited on (111)Si substrate. RHEED azimuthal plots of the Si layer which was grown on silicides depends strongly on the crystalline quality of the epitaxial layers. A study of the growth of thin (10–150 A) silicon overlayers on yttrium, dysprosium and cobalt suicide films epitaxially grown on (111)Si was also made.

Monte-Carlo simulation of Ge on Si(111) MBE growth: analysis of percolative structure

Abstract Reflection high energy electron diffraction (RHEED) intensity oscillations were observed during molecular beam epitaxy (MBE) growth of Ge on Si(111) surface. At 250 °C the oscillations continue up to 6 monolayers. The intensity of the reflected beam is calculated by solving the one-dimensional Schrodinger equation. Monte-Carlo simulation was used for the growth simulation in order to investigate fundamental behaviours of reflectivity change during the Stranski-Krastanov growth of Ge on the Si(111) surface at 250 °C.

Distributed growth model used for the interpretation of RHEED intensity oscillations observed during the growth of Pb on Si(111) substrates

Abstract Analyses of reflection high-energy electron diffraction (RHEED) intensity changes observed during initial stages of heteroepitaxial growth of Pb on Si(111) substrates were presented. The intensity of the reflected beam is calculated by solving the one-dimensional Schrodinger equation. A simple birth-death model was used for the growth simulation in order to investigate the fundamental behaviours of reflectivity change during the growth of Pb on the Si(111) surface.

Radiation damage distributions for 300 keV antimony ions implanted into silicon

Abstract Two well-known theories of Brice and of Winterbon and one simplified theory of radiation damage distributions are statistically compared with RBS data for room temperature 300 keV antimony ion implantation of silicon.