Kun Zheng

Large-Scale Synthesis of Single-Crystalline Iron Oxide Magnetic Nanorings

We present an innovative approach to the production of single-crystal iron oxide nanorings employing a solution-based route. Single-crystal hematite (alpha-Fe2O3) nanorings were synthesized using a double anion-assisted hydrothermal method (involving phosphate and sulfate ions), which can be divided into two stages: (1) formation of capsule-shaped alpha-Fe2O3 nanoparticles and (2) preferential dissolution along the long dimension of the elongated nanoparticles (the c axis of alpha-Fe2O3) to form nanorings. The shape of the nanorings is mainly regulated by the adsorption of phosphate ions on faces parallel to c axis of alpha-Fe2O3 during the nanocrystal growth, and the hollow structure is given by the preferential dissolution of the alpha-Fe2O3 along the c axis due to the strong coordination of the sulfate ions. By varying the ratios of phosphate and sulfate ions to ferric ions, we were able to control the size, morphology, and surface architecture to produce a variety of three-dimensional hollow nanostructures. These can then be converted to magnetite (Fe3O4) and maghemite (gamma-Fe2O3) by a reduction or reduction-oxidation process while preserving the same morphology. The structures and magnetic properties of these single-crystal alpha-Fe2O3, Fe3O4, and gamma-Fe2O3 nanorings were characterized by various analytical techniques. Employing off-axis electron holography, we observed the classical single-vortex magnetic state in the thin magnetite nanorings, while the thicker rings displayed an intriguing three-dimensional magnetic configuration. This work provides an easily scaled-up method for preparing tailor-made iron oxide nanorings that could meet the demands of a variety of applications ranging from medicine to magnetoelectronics.

Delicate control of crystallographic facet-oriented Cu2O nanocrystals and the correlated adsorption ability

In this work, we demonstrate the systematic and delicate geometry control of Cu2O nanocrystals by taking advantage of the selective surface stabilization effect. A variety of Cu2O architectures, evolved from cubes through truncated cubes, cubooctahedrons, truncated octahedrons and finally to octahedrons, were achieved by simply adjusting the added PVP. Based on the understanding of the intrinsic structural features of the cuprite Cu2O and PVP, we elucidated the underlying shape evolution mechanism. The as-prepared products demonstrated a crystallography-dependent adsorption ability with methyl orange (MeO) as the pollutant. With the advantage of a low cost, high yield and straightforward procedure without pre-formed crystals as sacrificial templates, this method may provide a good starting point for the study of shape construction and morphology-dependent properties of other nanocrystals.

Size-Dependent Bandgap Modulation of ZnO Nanowires by Tensile Strain

We quantified the size-dependent energy bandgap modulation of ZnO nanowires under tensile strain by an in situ measurement system combining a uniaxial tensile setup with a cathodoluminescence spectroscope. The maximal strain and corresponding bandgap variation increased by decreasing the size of the nanowires. The adjustable bandgap for the 100 nm nanowire caused by a strain of 7.3% reached approximately 110 meV, which is nearly double the value of 59 meV for the 760 nm nanowire with a strain of 1.7%. A two-step linear feature involving bandgap reduction caused by straining and a corresponding critical strain was identified in ZnO nanowires with diameters less than 300 nm. The critical strain moved toward the high strain level with shrunken nanowires. The distinct size effect of strained nanowires on the bandgap variation reveals a competition between core-dominated and surface-dominated bandgap modulations. These results could facilitate potential applications involving nanowire-based optoelectronic devices and band-strain engineering.

Atomic mechanisms governing the elastic limit and the incipient plasticity of bending Si nanowires.

Individual single-crystalline Si nanowires (NWs) were bent by forming loops or arcs with different radius. Positional-resolved atomic level strain distribution (PRALSD) along both of the radial and axial directions were calculated and mapped directly from the atomic-resolution strained high-resolution electron microscopy (HREM) images of the bent Si NWs. For the first time, the neutral-strain axis shifted from the compressive zone to the tensile region was directly demonstrated from the PRALSD along the radial direction. Bending-induced ripple-buckling of the bent Si NW was observed and a significant strain variation along the bending axial direction in the compressive region was revealed. The tensile surface atomic steps and the compressive buckling are the physical origin of the asymmetric tensile-compressive properties of postelastic instabilities and the incipient plasticity. Both of the tensile surface atomic-steps and the compressive buckling initiated versatile ductile plastic dislocation events.

Ni/Ni3C core-shell nanochains and its magnetic properties: one-step synthesis at low temperature.

One-dimensional Ni/Ni3C core-shell nanoball chains with an average diameter by around 30 nm were synthesized by means of a mild chemical solution method using a soft template of trioctylphosphine oxide (TOPO). It was revealed that the uniform Ni nanochains were capped with Ni3C thin shells by about 1-4 nm in thickness and each Ni core consists of polygrains. The coercivity of the core-shell nanochains is much enhanced (600 Oe at 5 K) and comparable with single Ni nanowires due to the one-dimensional shape anisotropy. Deriving from the distinctive structure of Ni core and Ni 3C shell, this architecture may possess a possible bifunctionality. This unique architecture is also useful for the study on the magnetization reversal mechanism of one-dimensional magnetic nanostructure.

Direct Atomic-Scale Imaging about the Mechanisms of Ultralarge Bent Straining in Si Nanowires

To safely and reliably use nanowires (NWs) for exploring new functions for different nanodevices, the mechanical properties and structural evolution of the nanowires under external stress become highly important. Large strain (up to 14%) bending experiments of Si NWs were conducted in a high-resolution transmission electron microscope at atomic resolution. The direct dynamic atomic-scale observations revealed that partial and full dislocation nucleation, motion, escape, and interaction were responsible for absorbing the ultralarge strain of up to 14% in bent Si nanowires. The prevalent full dislocation movement and interactions induced the formation of Lomer lock dislocations in the Si NWs. Finally, in contrast to the unlock process of Lomer dislocations that can happen in metallic materials, we revealed that the continuous straining on the Lomer dislocations induced a crystal-amorphous (c-a) transition in Si NWs. Our results provide direct explanation about the ultralarge straining ability of Si at the nanometer scale.

Piezoresistance behaviors of ultra-strained SiC nanowires

In situ electrical measurement experiments were carried out in individual SiC nanowires (NWs) subjected to tensile strain using a transmission electron microscope. Fracture strain approaching 10% was achieved for a diamond-structure SiC NW with a 〈111〉 direction. With an increase in the tensile strain, the conductance increased monotonously. The current rate of increase remained constant prior to fracture. The calculated piezoresistance coefficient of this SiC NW was −1.15u2009×u200910−11 Pa−1, which is similar to the coefficient of the bulk material. Our results indicate that these SiC NWs can be used as pressure sensors even in very high-pressure environments.

Catalyst Orientation-Induced Growth of Defect-Free Zinc-Blende Structured ⟨001̅⟩ InAs Nanowires

In this study, we demonstrate the epitaxial growth of ⟨001̅⟩ defect-free zinc-blende structured InAs nanowires on GaAs {111}B substrate using Au catalysts in molecular beam epitaxy. It has been found that the catalysts and their underlying ⟨001̅⟩ nanowires have the orientation relationship of {11̅03}C//{002̅}InAs and [3̅302]C//[11̅0]InAs due to their small in-plane lattice mismatches between their corresponding lattice spacings perpendicular to the {001̅} atomic planes of the nanowires, leading to the formation of the {001̅} catalyst/nanowire interfaces, and consequently the formation of ⟨001̅⟩ nanowires. This study provides a practical approach to manipulate the crystal structure and structural quality of III-V nanowires through carefully controlling the crystal phase of the catalysts.

Orientation Dependence of Electromechanical Characteristics of Defect-free InAs Nanowires.

Understanding the electrical properties of defect-free nanowires with different structures and their responses under deformation are essential for design and applications of nanodevices and strain engineering. In this study, defect-free zinc-blende- and wurtzite-structured InAs nanowires were grown using molecular beam epitaxy, and individual nanowires with different structures and orientations were carefully selected and their electrical properties and electromechanical responses were investigated using an electrical probing system inside a transmission electron microscope. Through our careful experimental design and detailed analyses, we uncovered several extraordinary physical phenomena, such as the electromechanical characteristics are dominated by the nanowire orientation, rather than its crystal structure. Our results provide critical insights into different responses induced by deformation of InAs with different structures, which is important for nanowire-based devices.

Helical Growth of Aluminum Nitride: New Insights into Its Growth Habit from Nanostructures to Single Crystals

By understanding the growth mechanism of nanomaterials, the morphological features of nanostructures can be rationally controlled, thereby achieving the desired physical properties for specific applications. Herein, the growth habits of aluminum nitride (AlN) nanostructures and single crystals synthesized by an ultrahigh-temperature, catalyst-free, physical vapor transport process were investigated by transmission electron microscopy. The detailed structural characterizations strongly suggested that the growth of AlN nanostructures including AlN nanowires and nanohelixes follow a sequential and periodic rotation in the growth direction, which is independent of the size and shape of the material. Based on these experimental observations, an helical growth mechanism that may originate from the coeffect of the polar-surface and dislocation-driven growth is proposed, which offers a new insight into the related growth kinetics of low-dimensional AlN structures and will enable the rational design and synthesis of novel AlN nanostructures. Further, with the increase of temperature, the growth process of AlN grains followed the helical growth model.