Kunihiro Tamahashi

Fabrication of a-Si:H electrophotographic photoreceptors by magnetron plasma CVD method

Abstract Hydrogenated amorphous Si films prepared by the magnetron plasma CVD (MGCVD) method, where magnetron-assited discharge is applied to CVD, have been studied for application as an electrophotographic photoreceptor. In the high RF power region, the deposition rates of the MGCVD film were larger than those of conventional plasma CVD films. The dark resistivity and the ημτ product of the MGCVD films were above 10 10 Qcm and 10 −7 cm 2 /V, respectively. A three layer a-Si:H photoreceptor, fabricated by the MGCVD method, showed photosensitivity of 0.35 m 2 /mJ and charge acceptance of 30 V/μm.

Structure and properties of a-Si1−xGex:H films prepared by RF-diode sputtering

Abstract In order to develop narrow band-gap photoconductive films with high resistivity, amorphous Si1−xGex:H films were prepared by rf-diode sputtering. The films with optical band gap of 1.5−1.6eV had high resistivity of 1011–1012 Ω cm. A positive correlation was observed between SiH2 type hydrogen content and resistivity. ESR studies of these films were carried out. Number of Ge dangling bonds per Ge atom was found to be 15 times lager than that of Si.