Kunjie Wu

Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors

Ultrathin film with thickness below 15 nm of organic semiconductors provides excellent platform for some fundamental research and practical applications in the field of organic electronics. However, it is quite challenging to develop a general principle for the growth of uniform and continuous ultrathin film over large area. Dip-coating is a useful technique to prepare diverse structures of organic semiconductors, but the assembly of organic semiconductors in dip-coating is quite complicated, and there are no reports about the core rules for the growth of ultrathin film via dip-coating until now. In this work, we develop a general strategy for the growth of ultrathin film of organic semiconductor via dip-coating, which provides a relatively facile model to analyze the growth behavior. The balance between the three direct factors (nucleation rate, assembly rate, and recession rate) is the key to determine the growth of ultrathin film. Under the direction of this rule, ultrathin films of four organic semiconductors are obtained. The field-effect transistors constructed on the ultrathin film show good field-effect property. This work provides a general principle and systematic guideline to prepare ultrathin film of organic semiconductors via dip-coating, which would be highly meaningful for organic electronics as well as for the assembly of other materials via solution processes.

Low Hysteresis Carbon Nanotube Transistors Constructed via a General Dry-Laminating Encapsulation Method on Diverse Surfaces

Electrical hysteresis in carbon nanotube thin-film transistor (CNTTFT) due to surface adsorption of H2O/O2 is a severe obstacle for practical applications. The conventional encapsulation methods based on vacuum-deposited inorganic materials or wet-coated organic materials have some limitations. In this work, we develop a general and highly efficient dry-laminating encapsulation method to reduce the hysteresis of CNTTFTs, which may simultaneously realize the construction and encapsulation of CNTTFT. Furthermore, by virtue of dry procedure and wide compatibility of PMMA, this method is suitable for the construction of CNTTFT on diverse surface including both inorganic and organic dielectric materials. Significantly, the dry-encapsulated CNTTFT exhibits very low or even negligible hysteresis with good repeatability and air stability, which is greatly superior to the nonencapsulated and wet-encapsulated CNTTFT with spin-coated PMMA. The dry-laminating encapsulation strategy, a kind of technological innovation, resolves a significant problem of CNTTFT and therefore will be promising in facile transferring and packaging the CNT films for high-performance optoelectronic devices.

Highly sensitive airflow sensors with an ultrathin reduced graphene oxide film inspired by gas exfoliation of graphite oxide

Inspired by the gas exfoliation of graphite oxide, a novel airflow sensor is demonstrated with an ultrathin (about 2 nm) reduced graphene oxide (RGO) film with tunable interlayer gaps. The airflow on/off reversibly switches the interlayer gaps of the RGO sheets, and thus changes the electrical conductivity of the RGO film. Remarkably, by virtue of the atomic-scale thickness of the sensing component, RGO sensors show high sensitivity, a wide detection range (tens of mm s−1 to several m s−1), and a low detection limit (26 mm s−1). Such performance is better than that of most of the traditional sensors and near to the capacity of some living beings.

High-Performance Pressure Sensor for Monitoring Mechanical Vibration and Air Pressure

To realize the practical applications of flexible pressure sensors, the high performance (sensitivity and response time) as well as more functionalities are highly desired. In this work, we fabricated a piezoresistive pressure sensor based on the micro-structured composites films of multi-walled carbon nanotubes (MWCNTs) and poly (dimethylsiloxane) (PDMS). In addition, we establish efficient strategies to improve key performance of our pressure sensor. Its sensitivity is improved up to 474.13 kPa−1 by minimizing pressure independent resistance of sensor, and response time is shorten as small as 2 μs by enhancing the elastic modulus of polymer elastomer. Benefiting from the high performance, the functionalities of sensors are successfully extended to the accurate detection of high frequency mechanical vibration (~300 Hz) and large range of air pressure (6–101 kPa), both of which are not achieved before.

Ultrahigh-Sensitivity Piezoresistive Pressure Sensors for Detection of Tiny Pressure

High-sensitivity pressure sensors are crucial for the ultrasensitive touch technology and E-skin, especially at the tiny-pressure range below 100 Pa. However, it is highly challenging to substantially promote sensitivity beyond the current level at several to 200 kPa-1 and to improve the detection limit lower than 0.1 Pa, which is significant for the development of pressure sensors toward ultrasensitive and highly precise detection. Here, we develop an efficient strategy to greatly improve the sensitivity near to 2000 kPa-1 using short-channel coplanar device structure and sharp microstructure, which is systematically proposed for the first time and rationalized by the mathematic calculation and analysis. Significantly, benefiting from the ultrahigh sensitivity, the detection limit is improved to be as small as 0.075 Pa. The sensitivity and detection limit are both superior to the current levels and far surpass the function of human skin. Furthermore, the sensor shows fast response time (50 μs), excellent reproducibility and stability, and low power consumption. Remarkably, the sensor shows excellent detection capacity in the tiny-pressure range, including light-emitting diode switching with a pressure of 7 Pa, ringtone (2-20 Pa) recognition, and ultrasensitive (0.1 Pa) electronic glove. This work represents a performance and strategic progress in the field of pressure sensing.