Kyle A. Luck

Polychiral semiconducting carbon nanotube-fullerene solar cells

Single-walled carbon nanotubes (SWCNTs) have highly desirable attributes for solution-processable thin-film photovoltaics (TFPVs), such as broadband absorption, high carrier mobility, and environmental stability. However, previous TFPVs incorporating photoactive SWCNTs have utilized architectures that have limited current, voltage, and ultimately power conversion efficiency (PCE). Here, we report a solar cell geometry that maximizes photocurrent using polychiral SWCNTs while retaining high photovoltage, leading to record-high efficiency SWCNT-fullerene solar cells with average NREL certified and champion PCEs of 2.5% and 3.1%, respectively. Moreover, these cells show significant absorption in the near-infrared portion of the solar spectrum that is currently inaccessible by many leading TFPV technologies.

Improved uniformity in high-performance organic photovoltaics enabled by (3-aminopropyl)triethoxysilane cathode functionalization

Organic photovoltaics have the potential to serve as lightweight, low-cost, mechanically flexible solar cells. However, losses in efficiency as laboratory cells are scaled up to the module level have to date impeded large scale deployment. Here, we report that a 3-aminopropyltriethoxysilane (APTES) cathode interfacial treatment significantly enhances performance reproducibility in inverted high-efficiency PTB7:PC71BM organic photovoltaic cells, as demonstrated by the fabrication of 100 APTES-treated devices versus 100 untreated controls. The APTES-treated devices achieve a power conversion efficiency of 8.08 ± 0.12% with histogram skewness of -0.291, whereas the untreated controls achieve 7.80 ± 0.26% with histogram skewness of -1.86. By substantially suppressing the interfacial origins of underperforming cells, the APTES treatment offers a pathway for fabricating large-area modules with high spatial performance uniformity.

Reducing flicker noise in chemical vapor deposition graphene field-effect transistors

Single-layer graphene derived from chemical vapor deposition (CVD) holds promise for scalable radio frequency (RF) electronic applications. However, prevalent low-frequency flicker noise (1/f noise) in CVD graphene field-effect transistors is often up-converted to higher frequencies, thus limiting RF device performance. Here, we achieve an order of magnitude reduction in 1/f noise in field-effect transistors based on CVD graphene transferred onto silicon oxide substrates by utilizing a processing protocol that avoids aqueous chemistry after graphene transfer. Correspondingly, the normalized noise spectral density (10−7–10−8 μm2 Hz−1) and noise amplitude (4 × 10−8–10−7) in these devices are comparable to those of exfoliated and suspended graphene. We attribute the reduction in 1/f noise to a decrease in the contribution of fluctuations in the scattering cross-sections of carriers arising from dynamic redistribution of interfacial disorder.

Tunable Radiation Response in Hybrid Organic–Inorganic Gate Dielectrics for Low-Voltage Graphene Electronics

Solution-processed semiconductor and dielectric materials are attractive for future lightweight, low-voltage, flexible electronics, but their response to ionizing radiation environments is not well understood. Here, we investigate the radiation response of graphene field-effect transistors employing multilayer, solution-processed zirconia self-assembled nanodielectrics (Zr-SANDs) with ZrOx as a control. Total ionizing dose (TID) testing is carried out in situ using a vacuum ultraviolet source to a total radiant exposure (RE) of 23.1 μJ/cm(2). The data reveal competing charge density accumulation within and between the individual dielectric layers. Additional measurements of a modified Zr-SAND show that varying individual layer thicknesses within the gate dielectric tuned the TID response. This study thus establishes that the radiation response of graphene electronics can be tailored to achieve a desired radiation sensitivity by incorporating hybrid organic-inorganic gate dielectrics.

Understanding charge transfer in carbon nanotube-fullerene bulk heterojunctions.

Semiconducting single-walled carbon nanotube/fullerene bulk heterojunctions exhibit unique optoelectronic properties highly suitable for flexible, efficient, and robust photovoltaics and photodetectors. We investigate charge-transfer dynamics in inverted devices featuring a polyethylenimine-coated ZnO nanowire array infiltrated with these blends and find that trap-assisted recombination dominates transport within the blend and at the active layer/nanowire interface. We find that electrode modifiers suppress this recombination, leading to high performance.