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Dive into the research topics where Kyozaburo Takeda is active.

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Featured researches published by Kyozaburo Takeda.


Chemical Physics Letters | 1992

Electronic structure of chain-like polystannane

Kyozaburo Takeda; Kenji Shiraishi

Abstract The electronic structure of polystannane (PSn), (SnH 2 ) n , has been calculated by the first principle local density functional method. The effect of bond-angle distortion on PSns first band gap is also investigated theoretically. The common features in the group IV polymers are then summarized by comparison with previous calculated results for polysilane (SiH 2 ) n and polygermane (GeH 2 ) n .


Journal of Non-crystalline Solids | 1985

Structure and band models for wide optical gap polysilane alloys

Shoji Furukawa; Nobuo Matsumoto; Kyozaburo Takeda

Abstract The microscopic structure and band models have been presented for wide optical-gap polysilane alloys. The experimentally obtained optical properties are explained by the models.


THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 | 2013

Electrical field manipulation of peptide nanotube at finite temperature (a DFT/MD study)

Richard Clark; Daiki Igami; Kyozaburo Takeda

The effect of applied electric field on a base class of peptide nanotubes (PNT) is simulated using molecular dynamics (MD). A conformational change in the base ring components is found at critical electric field strength, resulting in macroscopic changes to the nanotube (overall length, torque, pore radius, dipole, etc). The effect of temperature, solvent, and computational method is explored.


THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 | 2013

Time-dependent resonant UHF CI approach for the photo-induced dynamics of the multi-electron system confined in 2D QD

Takuma Okunishi; Richard Clark; Kyozaburo Takeda; Kouichi Kusakabe; Norikazu Tomita

We extend the static multi-reference description (resonant UHF) to the dynamic system in order to include the correlation effect over time, and simplify the TD Schrodinger equation (TD-CI) into a time-developed rate equation where the TD external field Ĥ′(t) is then incorporated directly in the Hamiltonian without any approximations. We apply this TD-CI method to the two-electron ground state of a 2D quantum dot (QD) under photon injection and study the resulting two-electron Rabi oscillation.


THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 | 2013

Spin-orbit interaction and novel shell structure for multi-electron system confined in 2D QD

Takahiro Yokozuka; Kouta Ido; Richard Clark; Kyozaburo Takeda

By implementing Pauli’s spin-orbit (s/o) coupling and Darwin’s relativistic correction, we study how relativistic terms affect the Schrodinger picture of electrons in a 2D quantum dot (QD). The competition between electron confinement and Pauli’s s/o coupling produces a novel shell structure at Ω0u2009=u20094mc2/ħ, and the inclusion of these relativistic terms is strictly restricted in the Schrodinger picture to ω < Ω0.


PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors | 2011

Singlet‐Triplet Ground‐State Instability in Square Quantum Dot

Yuki Negishi; Masamu Ishizuki; Atsushi Tsubaki; Kyozaburo Takeda; Yusuke Asari; Takahisa Ohno

We theoretically study the spin multiplicity in the ground state of the square quantum dot (SQD) including four electrons, and discuss a possibility of the singlet‐triplet (S/T) instability in the quantum system. As predicted by Hunds rule, the ground‐state triplet appears when the DQD has a point group symmetry of D4h. This ground‐state triplet is also found even in the deformed SQD (D2h) if the confinement length L is elongated. Consequently, the S/T instability is expected along these boundary lines. It is also worthwhile to notice that the present DFT as well as UHF calculation predicts the spin‐singlet ground‐state when the inter‐electron interaction is strengthened (larger L) even though the SQD maintains its geometrical form of D4h. The strong electron‐localization causes the destabilization in the orbital (kinetic) energies, and produces this characteristic “anti‐Hund” state.


PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors | 2011

Self‐Induced Oscillation for Electron‐Hole Pair Confined in Quantum Dot

Tomoki Tagawa; Atsushi Tsubaki; Masamu Ishizuki; Kyozaburo Takeda

We study the time‐dependent (TD) phenomena of the electron‐hole or electron‐electron pair confined in the square quantum dot (SQD) system by computationally solving TD Schroedinger equation under the unrestricted Hartree‐Fock (UHF) approach. A typical vacillation is found both in the electron and hole when the charged pair is strongly confined in the SQD while the charged particles have initially the same orbital symmetry. The FFT analysis elucidates that the transition matrix element due to the coulomb interaction involves the eigen frequency ω being equal to the excitation energy when the resonative vacillation appears. Thus, Coulomb potential has a potential to cause the self‐induced “Rabi” oscillation when the charged‐particle pair is confined only in the QD.


Archive | 2011

Ground state instability in spin polarization for electrons confined in 2D square quantum dots

Kyozaburo Takeda; Masamu Ishizuki; Takuma Okunishi; Yhuki Negishi


Archive | 2002

Stacking Manners of Hexa- and Octa-Peptide Nanorings in the Protein Nanotubes

Yukiko Nagai; Yukio Furukawa; Hajime Okamoto; Tsutomu Nakanishi; Kyozaburo Takeda; Ikuo Obataya; Hisakazu Mihara; Hiroaki Azehara; Wataru Mizutani


Archive | 2002

Theoretical Prediction and AFM Observations of the Protein Nanotube Consisting of Homo- L-alpha-Amino Acid Penta-Peptide Nanorings

Hajime Okamoto; Tsutomu Nakanishi; Yukiko Nagai; Kyozaburo Takeda; Ikuo Obataya; Hisakazu Mihara; Hiroaki Azehara; Wataru Mizutani

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Kenji Shiraishi

Nippon Telegraph and Telephone

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Hiroaki Azehara

National Institute of Advanced Industrial Science and Technology

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Hisakazu Mihara

Tokyo Institute of Technology

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Ikuo Obataya

Tokyo Institute of Technology

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Takahisa Ohno

National Institute for Materials Science

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