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Dive into the research topics where Kyuhan Lee is active.

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Featured researches published by Kyuhan Lee.


Journal of Crystal Growth | 2003

Effects of barrier growth temperature on the properties of InGaN/GaN multi-quantum wells

Sunwoon Kim; Kyuhan Lee; Keunseop Park; Chang-Soo Kim

The effects of the growth temperature and ambient of GaN quantum barriers on the characteristics of InGaN/GaN multi-quantum wells (MQWs) grown by a thermally pre-cracked ion-supplied metalorganic chemical vapor deposition (TPIS-MOCVD) system were investigated. The improvement of optical, structural properties and surface morphology in the MQWs with increasing the growth temperature of quantum barriers was found. Without a GaN capping layer, there were many pits and the thickness of quantum pair reduced by the thermal etching during the temperature-ramping process. Photoluminescence (PL) peaks showed a blue-shift and double peaks, but relative PL intensity abruptly increased due to the suppression of deep level related defects and smooth surface morphology caused by the increased surface mobility of adatom in the high temperature region. By using a GaN capping layer on the InGaN well layer, the thermal decomposition of the InGaN well layer was suppressed and pits on the surface abruptly reduced. A hydrogen carrier gas for the GaN barrier growth also improved the optical and structural properties of MQWs.


Journal of Crystal Growth | 2002

Growth of AlGaN epilayers related gas-phase reactions using TPIS-MOCVD

Sunwoon Kim; Junho Seo; Kyuhan Lee; Hae-Seok Lee; Keunseop Park; Younghoon Kim; Chang-Soo Kim

Abstract AlGaN epilayers on GaN/sapphire were successfully grown under various growth conditions using a thermally pre-cracked ion-supplied metalorganic chemical vapor deposition. The Al composition in the solid was affected by the gas-phase parasitic reaction between NH 3 and trimethylaluminum (TMAl). As the operating pressure decreased, the Al composition in the solid increased over the ideal incorporation efficiency. This is due to a scavenging effect and a site-blocking effect. As the TMAl flow rate increased with fixed flow rates of NH 3 and trimethylgallium (TMGa), the Al concentration in the solid increased but started to saturate. As the TMGa flow rate decreased, the solid Al composition increased linearly, which means different parasitic reactions between TMGa:NH 3 and TMAl:NH 3 . In addition, we found that the separating plate that was inserted to the reactor in front of the heated susceptor to separate ammonia gas flow from MO source input played an important role in the AlGaN growth. Particularly, the separating plate was more attractive under high operating pressure. When it was inserted, a white crystalline solid formed by the adduct (TMAl:NH 3 ) of parasitic reaction in the gas phase disappeared. It also increased the Al concentration in the solid. SEM images of AlGaN epilayer’s surface showed many small islands due to the lack of surface mobility of adatoms.


Journal of Crystal Growth | 2003

The influence of ammonia pre-heating to InGaN films grown by TPIS-MOCVD

Sunwoon Kim; Kyuhan Lee; Hae-Seok Lee; Keunseop Park; Chang-Soo Kim; Seok-Jae Son; Kyung-Woo Yi

Abstract The InGaN films on GaN layers using a thermally pre-cracked ion-supplied metalorganic chemical vapor deposition (TPIS-MOCVD) system were investigated by a high-resolution X-ray diffraction and the thermodynamic analysis was performed for an NH3 pre-heater by using the computational fluid-dynamic simulations. As the flow rates of NH3 increased, the In composition and the thickness of the InGaN films increased, which meant that the relative indium incorporation efficiency was dependent on the NH3 flow rate and affected by the growth rate. In a low NH3 flow condition, indium metal droplets appeared on the surface of the InGaN layer in a conventional MOCVD system and decreased the indium incorporation efficiency of the InGaN films. The thermodynamic model of the ammonia dissociation did not follow equilibrium conditions and adduct-driven species seemed the actual growth precursors in nitride. The catalyst effect of the NH3 pre-heater plays an important role in the mixing region and growing surface, resulting in the higher indium incorporation and droplet-free surface in a TPIS-MOCVD system.


Journal of Crystal Growth | 2004

Formation of V-shaped pits in GaN thin films grown on high temperature GaN

Kwang Suk Son; Dong Gyu Kim; Hyung Koun Cho; Kyuhan Lee; Sunwoon Kim; Keunseop Park


Journal of the Korean Physical Society | 2007

Ferromagnetic Behavior above Room Temperature of Fe-Ion-Implanted ZnO

Young-Yeal Song; K. S. Park; D. V. Son; Seong-Cho Yu; Hyun-Gu Kang; Sangwoo Shin; C. N. Whang; JuHee Lee; Jung Ho Song; Kyuhan Lee


Physica Status Solidi (c) | 2003

Effect of growth temperature and Si doping on the microstructure of GaN thin films grown on high temperature GaN

Kwang Suk Son; Dongyu Kim; Hyung Koun Cho; Kyuhan Lee; Sunwoon Kim; Keunseop Park; Junho Kim


MRS Online Proceedings Library Archive | 2005

Structural Characterization of GaN Epilayers Grown on Patterned Sapphire Substrates

Chang-Soo Kim; Ji-Hyun Moon; Sang-Jun Lee; S. K. Noh; Je Won Kim; Kyuhan Lee; Yong Dae Choi; Jay P. Song


Journal of the Korean Physical Society | 2004

Structural and optical characterizations of InxGa1-xN/GaN (0.15 ≤ x ≤ 0.30) multi-quantum well structures

Changsoo Kim; Sang-Jun Lee; S. K. Noh; Kyuhan Lee; Sunwoon Kim; Kwang-Jae Lee; Yong-Dae Choi


MRS Online Proceedings Library Archive | 2003

Structural and Optical Properties of InGaN/GaN Multi-Quantum Well Structures with Different Indium Compositions

Chang-Soo Kim; S. K. Noh; Kyuhan Lee; Sunwoon Kim; Jay P. Song


MRS Proceedings | 2002

Optical and Structural Studies of InGaN Layers and GaN/InGaN MQWs Using TPIS-MOCVD

Sunwoon Kim; Junho Seo; Kyuhan Lee; Hae-Seok Lee; Keunseop Park; Changsoo Kim

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Sunwoon Kim

Samsung Electro-Mechanics

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Chang-Soo Kim

Korea Research Institute of Standards and Science

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S. K. Noh

Korea Research Institute of Standards and Science

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Hae-Seok Lee

Toyota Technological Institute

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Sang-Jun Lee

Gwangju Institute of Science and Technology

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D. V. Son

Chungbuk National University

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