Kyung Jin Lee

Current-induced domain wall motion in a nanowire with perpendicular magnetic anisotropy

We theoretically study the current-induced magnetic domain wall motion in a metallic nanowire with perpendicular magnetic anisotropy. The anisotropy can reduce the critical current density of the domain wall motion. We explain the reduction mechanism and identify the maximal reduction conditions. This result facilitates both fundamental studies and device applications of the current-induced domain wall motion.

Current induced torques and interfacial spin-orbit coupling: semiclassical modeling

In bilayer nanowires consisting of a ferromagnetic layer and a nonmagnetic layer with strong spin-orbit coupling, currents create torques on the magnetization beyond those found in simple ferromagnetic nanowires. The resulting magnetic dynamics appear to require torques that can be separated into two terms, dampinglike and fieldlike. The dampinglike torque is typically derived from models describing the bulk spin Hall effect and the spin transfer torque, and the fieldlike torque is typically derived from a Rashba model describing interfacial spin-orbit coupling. We derive a model based on the Boltzmann equation that unifies these approaches. We also consider an approximation to the Boltzmann equation, the drift-diffusion model, that qualitatively reproduces the behavior, but quantitatively differs in some regimes. We show that the Boltzmann equation with physically reasonable parameters can match the torques for any particular sample, but in some cases, it fails to describe the experimentally observed thickness dependencies.

Magnetization dynamics induced by in-plane currents in ultrathin magnetic nanostructures with Rashba spin-orbit coupling

Recent experiments on ultrathin magnetic layers with broken inversion symmetry reported anomalous current-driven magnetization dynamics. We show that the spin-transfer torque can be significantly modified by Rashba spin-orbit coupling and the modified spin-transfer torque can explain the anomalous magnetization dynamics. This work will be valuable for the development of next generation spintronic devices based on ultrathin magnetic systems.

Spin Hall torque magnetometry of Dzyaloshinskii domain walls

Current-induced domain wall motion in the presence of the Dzyaloshinskii-Moriya interaction (DMI) is experimentally and theoretically investigated in heavy-metal/ferromagnet bilayers. The angular dependence of the current-induced torque and the magnetization structure of Dzyaloshinskii domain walls are described and quantified simultaneously in the presence of in-plane fields. We show that the DMI strength depends strongly on the heavy metal, varying by a factor of 20 between Ta and Pa, and that strong DMI leads to wall distortions not seen in conventional materials. These findings provide essential insights for understanding and exploiting chiral magnetism for emerging spintronics applications.

Spin–orbit-torque engineering via oxygen manipulation

Spin transfer torques allow the electrical manipulation of magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to spin-orbit torques, which are a more powerful tool for controlling magnetization and can enrich device functionalities. The engineering of spin-orbit torques, based mostly on the spin Hall effect, is being intensely pursued. Here, we report that the oxidation of spin-orbit-torque devices triggers a new mechanism of spin-orbit torque, which is about two times stronger than that based on the spin Hall effect. We thus introduce a way to engineer spin-orbit torques via oxygen manipulation. Combined with electrical gating of the oxygen level, our findings may also pave the way towards reconfigurable logic devices.

Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect

We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that in the high damping regime, the threshold switching current is independent of the damping constant and is almost linearly proportional to both effective perpendicular magnetic anisotropy field and external in-plane field applied along the current direction. We obtain an analytic expression of the threshold current, in excellent agreement with numerical results. Based on the expression, we find that magnetization switching induced by the spin Hall effect can be practically useful when it is combined with voltage-controlled anisotropy change.

Angular and temperature dependence of current induced spin-orbit effective fields in Ta/CoFeB/MgO nanowires.

Current induced spin-orbit effective magnetic fields in metal/ferromagnet/oxide trilayers provide a new way to manipulate the magnetization, which is an alternative to the conventional current induced spin transfer torque arising from noncollinear magnetization. Ta/CoFeB/MgO structures are expected to be useful for non-volatile memories and logic devices due to its perpendicular anisotropy and large current induced spin-orbit effective fields. However many aspects such as the angular and temperature dependent phenomena of the effective fields are little understood. Here, we evaluate the angular and temperature dependence of the current-induced spin-orbit effective fields considering contributions from both the anomalous and planar Hall effects. The longitudinal and transverse components of effective fields are found to have strong angular dependence on the magnetization direction at 300 K. The transverse field decreases significantly with decreasing temperature, whereas the longitudinal field shows weaker temperature dependence. Our results reveal important features and provide an opportunity for a more comprehensive understanding of current induced spin-orbit effective fields.

Spin-wave propagation in the presence of interfacial Dzyaloshinskii-Moriya interaction

In ferromagnetic thin films, broken inversion symmetry and spin-orbit coupling give rise to interfacial Dzyaloshinskii-Moriya interactions. Analytic expressions for spin-wave properties show that the interfacial Dzyaloshinskii-Moriya interaction leads to non-reciprocal spin-wave propagation, i.e. different properties for spin waves propagating in opposite directions. In favorable situations, it can increase the spin-wave attenuation length. Comparing measured spin wave properties in ferromagnet

Field-free switching of perpendicular magnetization through spin–orbit torque in antiferromagnet/ferromagnet/oxide structures

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Current-induced motion of a transverse magnetic domain wall in the presence of spin Hall effect

normal metal bilayers and other artificial layered structures with these calculations can provide a useful characterization of the interfacial Dzyaloshinskii-Moriya interactions.