Kyungsun Moon

Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO2 crystal

We report the characteristics of a voltage-induced metal-insulator transition (MIT) in macro-sized VO2 crystals. The square of MIT onset voltage (VCMIT2) value shows a linear dependence with the ambient temperature, suggesting that the Joule heating effect is the likely cause to the voltage-induced MIT. The combination of optical microscope images and Laue microdiffraction patterns show the simultaneous presence of a metallic phase in the bulk of the crystal with partially insulating surface layers even after the MIT occurs. A large asymmetry in the heating power just before and after the MIT reflects the sudden exchange of Joule heat to its environment.

Edge states of zigzag bilayer graphite nanoribbons

The electronic structures of zigzag bilayer graphite nanoribbons (Z-BGNRs) with various ribbon widths N are studied within the tight binding approximation. Neglecting the inter-layer hopping amplitude γ4, which is an order of magnitude smaller than the other inter-layer hopping parameters, there exist two fixed Fermi points ± k* independent of the ribbon width with a peculiar energy dispersion near k* as e(k)~ ± (k−k*)N. By investigating the edge states of Z-BGNRs, we notice that the trigonal warping of the bilayer graphene sheets is reflected in the edge state structure. With the inclusion of γ4, the above two Fermi points are not fixed but drift toward the vicinity of the Dirac point with increasing width N, as shown by the finite scaling method, and the peculiar dispersions change to parabolic ones. The edge magnetism of Z-BGNRs is also examined by solving the half-filled Hubbard Hamiltonian for the ribbon using the Hartree–Fock approximation. We have shown that within the same side of the edges, the edge spins are aligned ferromagnetically for the experimentally relevant set of parameters.

Ferromagnetism in diluted magnetic semiconductor quantum dot arrays embedded in semiconductors

Abstract.We present an Anderson-type model Hamiltonian with exchange coupling between the localized spins and the confined holes in the quantum dots to study the ferromagnetism in diluted magnetic semiconductor (DMS) quantum dot arrays embedded in semiconductors. The hybridization between the quantum-confined holes in the quantum dots and the itinerant holes in the semiconductor valence band makes possible hole transfer between the DMS quantum dots, which can induce the long range ferromagnetic order of the localized spins. In addition, it makes the carrier spins both in the quantum dots and in the semiconductors polarized. The spontaneous magnetization of the localized spins and the spin polarization of the holes are calculated using both the Weiss mean field approximation and the self-consistent spin wave approximation, which are developed for the present model.

PHASE DIAGRAM FOR SPLAY GLASS SUPERCONDUCTIVITY

Localization of flux lines to splayed columnar pins is studied. A sine-Gordon type renormalization group study reveals the existence of a Splay glass phase and yields an analytic form for the transition temperature into the glass phase. As an independent test, the

Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions

I-V

Thermodynamic phase diagram of the quantum hall skyrmion system

characteristics are determined via a Molecular Dynamics code. The glass transition temperature supports the RG results convincingly. The full phase diagram of the model is constructed.

Metal insulator transition characteristics of macro-size single domain VO2 crystals

Using the spin-polarized tunneling model and taking into account the basic physics of ferromagnetic semiconductors, we study the temperature dependence of the tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor (DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As. The experimentally observed TMR ratio is in reasonable agreement with our result based on the typical material parameters. It is also shown that the TMR ratio has a strong dependence on both the itinerant-carrier density and the magnetic ion density in the DMS electrodes. This can provide a potential way to achieve larger TMR ratio by optimally adjusting the material parameters.

Strong Coupling of a Cavity QED Architecture for a Current-biased Flux Qubit

We numerically study the interacting quantum Hall Skyrmion system based on the Chern-Simons action. By noticing that the action is invariant under global spin rotations in the spin space with respect to the magnetic field direction, we obtain the low-energy effective action for a many-Skyrmion system. Performing extensive molecular dynamics simulations, we establish the thermodynamic phase diagram for a many-Skyrmion system.

Reentrant melting of soliton lattice phase in a bilayer quantum Hall system

The metal insulator transition (MIT) characteristics of macro-size single-domain VO2 crystal were investigated. At the MIT, the VO2 crystal exhibited a rectangular shape hysteresis curve, a large change in resistance between the insulating and the metallic phases, in the order of ∼105, and a small transition width (i.e. temperature difference before and after MIT) as small as 10−3°C. These MIT characteristics of the VO2 crystals are discussed in terms of phase boundary motion and the possibility of controlling the speed of the phase boundary, with change in size of crystal, is suggested.

EDGE MAGNETISM AND QUANTUM SPIN HALL EFFECT IN ZIGZAG GRAPHENE NANORIBBON

We propose a scheme for a cavity quantum electrodynamics (QED) architecture for a currentbiased superconducting flux qubit with three Josephson junctions. The qubit operation is performed by using a bias current coming from the current mode of the circuit resonator. If the phase differences of junctions are to be coupled with the bias current, the Josephson junctions should be arranged in an asymmetric way in the qubit loop. Our QED scheme provides a strong coupling between the flux qubit and the transmission line resonator of the circuit.