L. A. Shahada

Electro-Optic Plasmonic Modulator With Direct Coupling to Silicon Waveguides

A novel plasmonic Mach–Zehnder interferometer is proposed with a nonlinear polymer. Orthogonal junction coupling between silicon and plasmonic waveguides is exploited to omit the need for tapers, and in turn, reduce the footprint. An extinction ratio of about 16 dB is produced at a voltage-length product of 47 V μm. An insertion loss of 3.38 dB is achieved including the coupling to and from the silicon access waveguide. The orthogonal coupling provides wideband operation, high efficiency, low loss, and compact size for our design.

Near infrared plasmonic sensor based on Fano resonance

We introduce a compact plasmonic resonator that is capable of generating a Fano resonance in the transmission spectrum. The Fano resonance is observed with its unique lineshape. The proposed design is simple, compact, easy to fabricate and can be easily developed for different applications. The device structure is made of a gold layer, a metalinsulator- metal waveguide, and a rectangular cavity. As an application to the proposed plasmonic resonator, we introduce a gas sensor which is operational at the near infrared spectral range. The sensor possesses a high sensitivity of 1500nm/RIU at the telecom wavelength 1.55μm. FDTD simulation tools were conducted for the optimization of the device structure and obtaining the results.

Optical modulator based on silicon nanowires racetrack resonator

An optical modulator based on the racetrack resonator configuration is introduced. The structure of the resonator modulator is built from silicon nanowires on silica. The cladding and voids between the silicon nanowires are filled with an electro-optic polymer. The proposed modulator is fully CMOS compatible. When the resonance is tuned to the 1.55μm wavelength, it experiences a wavelength shift upon voltage application, which is measured at the output as a change in the power level.

Hybrid plamonic conductor-gap-silicon microring-on-disks electro-optic modulator

In this work, we propose a novel design of a double microring-on-disk electro-optic modulator based on hybrid plasmonic conductor-gap-silicon platform utilizing the electromagnetic induced transparency response. The modulator can be realized using relatively simple fabrication processes and has a very low power consumption of about 2.12 fJ/bit.

Hybrid silicon plasmonic ring resonator modulator

We propose a hybrid plasmonic modulator based on the ring resonator configuration. The device structure is composed of a stack of layers of silicon-insulator-metal-insulator-silicon, all on a buried oxide. The insulator embedded in the structure is an organic polymer with strong electro-optical effects. The proposed device is characterized by its small footprint, high extinction ratio, and moderate insertion losses. 3D Finite Difference Time Domain simulations tools were employed for designing and simulating the operation of the modulator at the telecommunication wavelength, while observing the device performance.

Silicon nanowires organic hybrid modulator based on directional coupler

All CMOS modulator based on directional coupler configuration is presented, simulated, and analyzed. The device structure utilizes the silicon-organic hybrid platform. The waveguides are made of arrays of silicon nanowires on a bulk silicon dioxide substrate. While the cladding and the voids between the silicon nanowires are filled with an electro-optic polymer. When the voltage applied across the electro-optic polymer layer changes, the polymer will have its refractive index value changed, leading to a change in the effective index. Thus, under directional coupler operation, we control the power coupled and exchanged between the two arms of the directional coupler. Utilizing Finite Difference Time Domain simulations tools, we design and simulate the operation of the modulator at the telecommunication wavelength, with promising extinction ratios.