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Dive into the research topics where L. Favre is active.

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Featured researches published by L. Favre.


ACS Nano | 2014

Wafer Scale Formation of Monocrystalline Silicon-Based Mie Resonators via Silicon-on-Insulator Dewetting

M. Abbarchi; Meher Naffouti; Benjamin Vial; Abdelmalek Benkouider; Laurent Lermusiaux; L. Favre; A. Ronda; Sébastien Bidault; I. Berbezier; Nicolas Bonod

Subwavelength-sized dielectric Mie resonators have recently emerged as a promising photonic platform, as they combine the advantages of dielectric microstructures and metallic nanoparticles supporting surface plasmon polaritons. Here, we report the capabilities of a dewetting-based process, independent of the sample size, to fabricate Si-based resonators over large scales starting from commercial silicon-on-insulator (SOI) substrates. Spontaneous dewetting is shown to allow the production of monocrystalline Mie-resonators that feature two resonant modes in the visible spectrum, as observed in confocal scattering spectroscopy. Homogeneous scattering responses and improved spatial ordering of the Si-based resonators are observed when dewetting is assisted by electron beam lithography. Finally, exploiting different thermal agglomeration regimes, we highlight the versatility of this technique, which, when assisted by focused ion beam nanopatterning, produces monocrystalline nanocrystals with ad hoc size, position, and organization in complex multimers.


Physical Review B | 2006

Structural and magnetic properties of CoPt mixed clusters

L. Favre; V. Dupuis; E. Bernstein; P. Mélinon; A. Perez; S. Stanescu; Thierry Epicier; Jean-Paul Simon; D. Babonneau; J. M. Tonnerre; J.-L. Hodeau

In this present work, we report a structural and magnetic study of mixed Co58Pt42 clusters. MgO, Nb and Si matrix can be used to embed clusters, avoiding any magnetic interactions between particles. Transmission Electron Microscopy (TEM) observations show that Co58Pt42 supported isolated clusters are about 2nm in diameter and crystallized in the A1 fcc chemically disordered phase. Grazing Incidence Small Angle X-ray Scattering (GISAXS) and Grazing Incidence Wide Angle X-ray Scattering (GIWAXS) reveal that buried clusters conserve these properties, interaction with matrix atoms being limited to their first atomic layers. Considering that 60% of particle atoms are located at surface, this interactions leads to a drastic change in magnetic properties which were investigated with conventional magnetometry and X-Ray Magnetic Circular Dichroism (XMCD). Magnetization and blocking temperature are weaker for clusters embedded in Nb than in MgO, and totally vanish in silicon as silicides are formed. Magnetic volume of clusters embedded in MgO is close to the crystallized volume determined by GIWAXS experiments. Cluster can be seen as a pure ferromagnetic CoPt crystallized core surrounded by a cluster-matrix mixed shell. The outer shell plays a predominant role in magnetic properties, especially for clusters embedded in niobium which have a blocking temperature 3 times smaller than clusters embedded in MgO.


New Journal of Physics | 2012

The kinetics of dewetting ultra-thin Si layers from silicon dioxide

M. Aouassa; L. Favre; A. Ronda; Hassen Maaref; I. Berbezier

In this study, we investigate the kinetically driven dewetting of ultra-thin silicon films on silicon oxide substrate under ultra-high vacuum, at temperatures where oxide desorption and silicon lost could be ruled out. We show that in ultra-clean experimental conditions, the three different regimes of dewetting, namely (i) nucleation of holes, (ii) film retraction and (iii) coalescence of holes, can be quantitatively measured as a function of temperature, time and thickness. For a nominal flat clean sample these three regimes co-exist during the film retraction until complete dewetting. To discriminate their roles in the kinetics of dewetting, we have compared the dewetting evolution of flat unpatterned crystalline silicon layers (homogeneous dewetting), patterned crystalline silicon layers (heterogeneous dewetting) and amorphous silicon layers (crystallization-induced dewetting). The first regime (nucleation) is described by a breaking time which follows an exponential evolution with temperature with an activation energy EH 3.2eV. The second regime (retraction) is controlled by surface diffusion of matter from the edges of the holes. It involves a very fast redistribution of matter onto the flat Si layer, which prevents the formation of a rim on the edges of the holes during both heterogeneous and homogeneous dewetting. The time evolution of the linear dewetting front measured during heterogeneous dewetting follows a characteristic power law x t 0.45 consistent with a surface diffusion-limited


Applied Physics Letters | 2012

Design of free patterns of nanocrystals with ad hoc features via templated dewetting

M. Aouassa; I. Berbezier; L. Favre; A. Ronda; Monica Bollani; Roman Sordan; Anne Delobbe; Pierre Sudraud

Design of monodisperse ultra-small nanocrystals (NCs) into large scale patterns with ad hoc features is demonstrated. The process makes use of solid state dewetting of a thin film templated through alloy liquid metal ion source focused ion beam (LMIS-FIB) nanopatterning. The solid state dewetting initiated at the edges of the patterns controllably creates the ordering of NCs with ad hoc placement and periodicity. The NC size is tuned by varying the nominal thickness of the film while their position results from the association of film retraction from the edges of the lay out and Rayleigh-like instability. The use of ultra-high resolution LMIS-FIB enables to produce monocrystalline NCs with size, periodicity, and placement tunable as well. It provides routes for the free design of nanostructures for generic applications in nanoelectronics.


Applied Physics Letters | 2007

Morphological and structural evolutions of diluted Ge1−xMnx epitaxial films

J.-P. Ayoub; L. Favre; I. Berbezier; A. Ronda; L. Morresi; Nicola Pinto

We investigate the structural and morphological evolutions of Ge1−xMnx films, grown by molecular beam epitaxy on Ge(100), as a function of Mn nominal concentration (x). We show that in our experimental growth conditions (growth temperature TG∼160°C), Mn atoms incorporated in the matrix increases with x up to a concentration m∼0.03. Magnetic properties of the samples are mainly related to Ge3Mn5 cluster phase, while transport properties are connected to Ge:Mn matrix.


Journal of Physics D | 2012

Theory of magnetic domains in uniaxial thin films

F. Virot; L. Favre; R. Hayn; M. D. Kuz'min

For uniaxial easy axis films, properties of magnetic domains are usually described within the Kittel model, which assumes that domain walls are much thinner than the domains. In this work we present a simple model that includes a proper description of the magnetostatic energy of domains and domain walls and also takes into account the interaction between both surfaces of the film. Our model describes the behavior of domain and wall widths as a function of film thickness, and is especially well suited for the strong stripe phase. We prove the existence of a critical value of magneto-crystalline anisotropy above which stripe domains exist for any film thickness and justify our model by comparison with exact results. The model is in good agreement with experimental data for hcp cobalt.


Journal of Physics: Condensed Matter | 2004

Magnetic assembled nanostructures from pure and mixed Co-based clusters

V. Dupuis; L. Favre; S. Stanescu; J. Tuaillon-Combes; E. Bernstein; A. Perez

The low energy cluster beam deposition (LECBD) technique is used to prepare original magnetic nanostructures from Co-based clusters preformed in the gas phase and subsequently embedded in non-magnetic matrices in ultrahigh vacuum. Nanostructured films of pure cobalt and mixed CoM clusters (with M = Ag or Pt) with controlled sizes and compositions have been investigated. We study the correlations between the specific structure, morphology and the resulting magnetic properties obtained for individual nanoclusters by the highly sensitive microSQUID magnetometry technique and on assemblies of non-interacting clusters by conventional techniques. From the role of various contributions, we will underline at the nanometre scale the dominant role of the surface/interface effects on the magnetic anisotropy.


Journal of Applied Physics | 2014

Role of quantum confinement in luminescence efficiency of group IV nanostructures

Eric G. Barbagiovanni; David J. Lockwood; N. L. Rowell; R. N. Costa Filho; I. Berbezier; G. Amiard; L. Favre; A. Ronda; Marco Faustini; David Grosso

Experimental results obtained previously for the photoluminescence efficiency (PLeff) of Ge quantum dots (QDs) are theoretically studied. A log-log plot of PLeff versus QD diameter (D) resulted in an identical slope for each Ge QD sample only when E-G similar to (D-2 + D)(-1). We identified that above D approximate to 6.2 nm: E-G similar to D-1 due to a changing effective mass (EM), while below D approximate to 4.6 nm: E-G similar to D-2 due to electron/hole confinement. We propose that as the QD size is initially reduced, the EM is reduced, which increases the Bohr radius and interface scattering until eventually pure quantum confinement effects dominate at small D


Applied Physics Letters | 2012

Ultra-thin planar fully relaxed Ge pseudo-substrate on compliant porous silicon template layer

M. Aouassa; S. Escoubas; A. Ronda; L. Favre; S. Gouder; R. Mahamdi; E. Arbaoui; Aomar Halimaoui; I. Berbezier

Porous silicon (PSi) layers are used as templates to grow epitaxial planar and fully relaxed Ge pseudo-substrates. An annealing at 600 °C, dramatically changes the PSi morphology and produces compliant template layers which serve in a second step, as substrate for the epitaxy of fully relaxed SiGe layers with a Ge content between 50% and 94%. The SiGe pseudo-substrates produced by such process exhibit a remarkable planar surface resulting from the penetration of Ge inside the pores. They could be integrated into conventional microelectronic technology for the subsequent deposition of active layers such as tensily strained Si or relaxed Ge.


Science Advances | 2017

Complex dewetting scenarios of ultrathin silicon films for large-scale nanoarchitectures

Meher Naffouti; Rainer Backofen; Marco Salvalaglio; Thomas Bottein; Mario Lodari; Axel Voigt; Thomas David; Abdelmalek Benkouider; Ibtissem Fraj; L. Favre; A. Ronda; I. Berbezier; David Grosso; M. Abbarchi; Monica Bollani

Si-based nanoarchitectures are formed with unprecedented precision and reproducibility via templated dewetting of thin SOI. Dewetting is a ubiquitous phenomenon in nature; many different thin films of organic and inorganic substances (such as liquids, polymers, metals, and semiconductors) share this shape instability driven by surface tension and mass transport. Via templated solid-state dewetting, we frame complex nanoarchitectures of monocrystalline silicon on insulator with unprecedented precision and reproducibility over large scales. Phase-field simulations reveal the dominant role of surface diffusion as a driving force for dewetting and provide a predictive tool to further engineer this hybrid top-down/bottom-up self-assembly method. Our results demonstrate that patches of thin monocrystalline films of metals and semiconductors share the same dewetting dynamics. We also prove the potential of our method by fabricating nanotransfer molding of metal oxide xerogels on silicon and glass substrates. This method allows the novel possibility of transferring these Si-based patterns on different materials, which do not usually undergo dewetting, offering great potential also for microfluidic or sensing applications.

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I. Berbezier

Aix-Marseille University

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A. Ronda

Aix-Marseille University

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M. Abbarchi

Aix-Marseille University

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Thomas David

Aix-Marseille University

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Meher Naffouti

Aix-Marseille University

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M. Aouassa

Centre national de la recherche scientifique

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Jean-Noël Aqua

Centre national de la recherche scientifique

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