L. García-González

A resonant magnetic field microsensor with high quality factor at atmospheric pressure

A resonant magnetic field microsensor with a high quality factor at atmospheric pressure has been designed, fabricated and tested. This microsensor does not require vacuum packaging to operate efficiently and presents a compact and simple geometrical configuration of silicon. This geometry permits us to decrease the size of the structure and facilities its fabrication and operation. It is constructed of a seesaw plate (400 × 150 × 15 µm3), two torsional beams (60 × 40 × 15 µm3), four flexural beams (130 × 12 × 15 µm3) and a Wheatstone bridge with four p-type piezoresistors. The resonant device exploits the Lorentz force principle and operates at its first resonant frequency (136.52 kHz). A sinusoidal excitation current of 22.0 mA with a frequency of 136.52 kHz and magnetic fields from 1 to 400 G are considered. The mechanical response of the microsensor is modeled with the finite element method (FEM). The structure of the microsensor registered a maximum von Mises stress of 53.8 MPa between the flexural and the torsional beams. Additionally, a maximum deflection (372.5 nm) is obtained at the extreme end of the plate. The proposed microsensor has the maximum magnetic sensitivity of 40.3 µV G−1 (magnetic fields <70 G), theoretical root-mean square (rms) noise voltage of 57.48 nV Hz−1/2, theoretical resolution of 1.43 mG Hz−1/2 and power consumption less than 10.0 mW.

Biocompatibility and Surface Properties of TiO2 Thin Films Deposited by DC Magnetron Sputtering

We present the study of the biocompatibility and surface properties of titanium dioxide (TiO2) thin films deposited by direct current magnetron sputtering. These films are deposited on a quartz substrate at room temperature and annealed with different temperatures (100, 300, 500, 800 and 1100 °C). The biocompatibility of the TiO2 thin films is analyzed using primary cultures of dorsal root ganglion (DRG) of Wistar rats, whose neurons are incubated on the TiO2 thin films and on a control substrate during 18 to 24 h. These neurons are activated by electrical stimuli and its ionic currents and action potential activity recorded. Through X-ray diffraction (XRD), the surface of TiO2 thin films showed a good quality, homogeneity and roughness. The XRD results showed the anatase to rutile phase transition in TiO2 thin films at temperatures between 500 and 1100 °C. This phase had a grain size from 15 to 38 nm, which allowed a suitable structural and crystal phase stability of the TiO2 thin films for low and high temperature. The biocompatibility experiments of these films indicated that they were appropriated for culture of living neurons which displayed normal electrical behavior.

Analytical Modeling for the Bending Resonant Frequency of Sensors Based on Micro and Nanoresonators With Complex Structural Geometry

Micro- and nanoresonator sensors have important applications such as in chemical and biological sensing, environmental control, monitoring of viscosity and magnetic fields, and inertial forces detection. However, most of these resonators are designed as complex structures that complicate the estimation of their resonant frequencies (generally of the bending or torsional mode). In this paper, we present an analytical model to estimate the resonant frequency of the first bending mode of micro- and nanoresonators based on a beam system under different load types. This system is constructed of beams with different cross sections joined through a series-parallel arrangement. The analytical model is derived using the Rayleigh and Macaulay methods, as well as the Euler-Bernoulli beam theory. In addition, we determined the deflection function of the beam system, which can be used to establish its bending structural response under several load types. We applied the model to both a silicon microresonator (with a thickness of 5 μ m) for an experimental magnetic field sensor developed in our laboratory and for a polycrystalline silicon nanoresonator (with a thickness of 160 nm) of a mass sensor reported in the literature. The results of our analytical model have a comparable agreement with those obtained from the finite-element models (FEMs) and with the experimental measurements. Our analytical model can be useful in the mechanical design of micro- and nanoresonators with complex structural configurations.

A study of TiAlN coatings prepared by rf co-sputtering

Using the reactive magnetron rf co-sputtering technique and a Ti target partially covered with a small Al plate, TiAlN coatings were made on c-Si in a reactive atmosphere of nitrogen and argon. Coatings were deposited on substrates at 22°C and at 150°C. The substrate temperature notably affected the thickness, crystalline grain size, and hardness of the coatings. We analyzed the dependence of both structure and crystalline grain sizes on substrate temperature and the chemical composition of the coatings. The structural properties and the chemical composition were obtained by means of XRD and EDS techniques. High aluminum content was found in the coatings for the samples grown at the lower substrate temperature when samples were measured by electron dispersive spectroscopy technique. Atomic force microscopy measurements showed a surface morphology dependent on the nitrogen content. Scanning electron microscopy measurements showed a clear pyramidal microstructure of TiAlN coatings grown at 22°C, while the microstructure of those grown at a substrate temperature of 150°C were not well defined.

Cytotoxicity Evaluation of Anatase and Rutile TiO2 Thin Films on CHO-K1 Cells in Vitro

Cytotoxicity of titanium dioxide (TiO2) thin films on Chinese hamster ovary (CHO-K1) cells was evaluated after 24, 48 and 72 h of culture. The TiO2 thin films were deposited using direct current magnetron sputtering. These films were post-deposition annealed at different temperatures (300, 500 and 800 °C) toward the anatase to rutile phase transformation. The root-mean-square (RMS) surface roughness of TiO2 films went from 2.8 to 8.08 nm when the annealing temperature was increased from 300 to 800 °C. Field emission scanning electron microscopy (FESEM) results showed that the TiO2 films’ thickness values fell within the nanometer range (290–310 nm). Based on the results of the tetrazolium dye and trypan blue assays, we found that TiO2 thin films showed no cytotoxicity after the aforementioned culture times at which cell viability was greater than 98%. Independently of the annealing temperature of the TiO2 thin films, the number of CHO-K1 cells on the control substrate and on all TiO2 thin films was greater after 48 or 72 h than it was after 24 h; the highest cell survival rate was observed in TiO2 films annealed at 800 °C. These results indicate that TiO2 thin films do not affect mitochondrial function and proliferation of CHO-K1 cells, and back up the use of TiO2 thin films in biomedical science.

Photoreflectance and Raman Study of Surface Electric States on AlGaAs/GaAs Heterostructures

Photoreflectance (PR) and Raman are two very useful spectroscopy techniques that usually are used to know the surface electronic states in GaAs-based semiconductor devices. However, although they are exceptional tools there are few reports where both techniques were used in these kinds of devices. In this work, the surface electronic states on AlGaAs/GaAs heterostructures were studied in order to identify the effect of factors like laser penetration depth, cap layer thickness, and surface passivation over PR and Raman spectra. PR measurements were performed alternately with two lasers (532 nm and 375 nm wavelength) as the modulation sources in order to identify internal and surface features. The surface electric field calculated by PR analysis decreased whereas the GaAs cap layer thickness increased, in good agreement with a similar behavior observed in Raman measurements ( ratio). When the heterostructures were treated by Si-flux, these techniques showed contrary behaviors. PR analysis revealed a diminution in the surface electric field due to a passivation process whereas the ratio did not present the same behavior because it was dominated by the depletion layers width (cap layer thickness) and the laser penetration depth.

Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films

Amorphous carbon nitride films with N/C ratios ranging from 2.24 to 3.26 were deposited by reactive sputtering at room temperature on corning glass, silicon, and quartz as substrates. The average chemical composition of the films was obtained from the semiquantitative energy dispersive spectroscopy analysis. Photoluminescence measurements were performed to determine the optical band gap of the films. The photoluminescence spectra displayed two peaks: one associated with the substrate and the other associated with films located at ≈ eV. Results show an increase in the optical band gap from 2.11 to 2.15 eV associated with the increase in the N/C ratio. Raman spectroscopy measurements showed a dominant band. ratio reaches a maximum value for N/C ≈ 3.03 when the optical band gap is 2.12 eV. Features observed by the photoluminescence and Raman studies have been associated with the increase in the carbon sp2/sp3 ratio due to presence of high nitrogen content.