L. Jastrabik

High dielectric permittivity in AFe1/2B1/2O3 nonferroelectric perovskite ceramics (A=Ba, Sr, Ca; B=Nb, Ta, Sb)

AFe1/2B1/2O3(A=Ba, Sr, Ca; B=Nb, Ta, Sb) ceramics were synthesized and temperature dependences of dielectric permittivity were measured at different frequencies. The experimental data obtained show very high values of dielectric permittivity in a wide temperature interval that is inherent to so-called high-k materials. Analyses of these data establish a Maxwell–Wagner mechanism as a main source for the phenomenon observed.

Bias-field effect on the temperature anomalies of dielectric permittivity in PbMg1/3Nb2/3O3 -PbTiO3 single crystals

In contrast to ordinary ferroelectrics where the temperature

Hardness, intrinsic stress, and structure of the a-C and a-C:H films prepared by magnetron sputtering

{T}_{m}

Ion-beam induced chemical and structural modification in polymers

of the permittivity maximum monotonically increases with bias field

Barrier-torch discharge plasma source for surface treatment technology at atmospheric pressure

E

Electron spin resonance investigation of Mn 2 + ions and their dynamics in Mn-doped Sr Ti O 3

in

Thermal stability of microhardness and internal stress of hard a-C films with predominantly sp2 bonds

(1\ensuremath{-}x)\mathrm{Pb}{\mathrm{Mg}}_{1∕3}{\mathrm{Nb}}_{2∕3}{\mathrm{O}}_{3}\text{\ensuremath{-}}(x)\mathrm{Pb}\mathrm{Ti}{\mathrm{O}}_{3}

Study of the structure of hard graphite-like amorphous carbon films by electron diffraction

(0\ensuremath{\leqslant}x\ensuremath{\leqslant}0.35)

Germanium nitride layers prepared by supersonic r.f. plasma jet

single crystals,