L. Kilanski

Low energy electron beam induced vacancy activation in GaN

Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5–20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive VGa-Hn complexes that can be activated by H removal during low energy electron irradiation.

Magnetism and magnetotransport of strongly disordered Zn1−xMnxGeAs2 semiconductor: The role of nanoscale magnetic clusters

We present systematic studies of magnetic and transport properties of Zn1−xMnxGeAs2 semimagnetic semiconductor with the chemical composition varying between 0.053≤x≤0.182. The transport characterization showed that all investigated samples had p-type conductivity strongly depending on the chemical composition of the alloy. The Hall effect measurements revealed carrier concentrations p≥1019 cm−3 and relatively low mobilities, μ≤15 cm2/(V s), also chemical composition dependent. The magnetic investigations showed the presence of paramagnet-ferromagnet phase transitions with transition temperatures greater than 300 K for the samples with x≥0.078. We prove by means of x-ray diffraction, nuclear magnetic resonance, and scanning electron microscopy techniques that the observed room temperature ferromagnetism is due to the presence of MnAs inclusions. The high field magnetoresistance showed the presence of giant magnetoresistance effect with maximum amplitudes around 50% due to the presence of nanosize ferromagn...

The magnetic interactions in spin-glasslike Ge1-x-ySnxMnyTe diluted magnetic semiconductor

We investigated the nature of the magnetic phase transition in the Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the range of 0.083 < x < 0.142 and 0.012 < y < 0.119. The DC magnetization measurements performed in the magnetic field up to 90 kOe and temperature range 2-200 K showed that the magnetic ordering at temperatures below T = 50 K exhibits features characteristic for both spin-glass and ferromagnetic phases. The modified Sherrington - Southern model was applied to explain the observed transition temperatures. The calculations showed that the spin-glass state is preferred in the range of the experimental carrier concentrations and Mn content. The value of the Mn hole exchange integral was estimated to be J/pd/ = 0.45+/-0.05 eV. The experimental magnetization vs temperature curves were reproduced satisfactory using the non-interacting spin-wave theory with the exchange constant J/pd/ values consistent with those calculated using modified Sherrington - Southern model. The magnetization vs magnetic field curves showed nonsaturating behavior at magnetic fields B < 90 kOe indicating the presence of strong magnetic frustration in the system. The experimental results were reproduced theoretically with good accuracy using the molecular field approximation-based model of a disordered ferromagnet with long-range RKKY interaction.

Magnetic interactions in Ge1−xCrxTe semimagnetic semiconductors

We present the studies of magnetic properties of Ge/1-x/Cr/x/Te diluted magnetic semiconductor with changeable chemical composition 0.016 \leq x \leq 0.061. A spin-glass state (at T \leq 35 K) for x = 0.016 and 0.025 and a ferromagnetic phase (at T < 60 K) for x \geq 0.030 are observed. The long range carrier-mediated magnetic interactions are found to be responsible for the observed magnetic ordering for x < 0.045, while for x \geq 0.045 the spinodal decomposition of Cr ions leads to a maximum and decrease of the Curie temperature, TC, with increasing x. The calculations based on spin waves model are able to reproduce the observed magnetic properties at a homogeneous limit of Cr alloying, e.g. x < 0.04, and prove that carrier mediated Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction is responsible for the observed magnetic states. The value of the Cr-hole exchange integral, Jpd, estimated via fitting of the experimental results with the theoretical model, is in the limits 0.77...0.88 eV.

Spin-glasslike behavior in rhombohedral (Ge,Mn)Te–(Sn,Mn)Te mixed crystal

We present studies of magnetic and transport properties of Ge1−x−ySnxMnyTe mixed crystals with chemical compositions 0.083≤x≤0.142 and 0.012≤y≤0.119. The transport characterization measurements were performed at temperatures 4.2 1021 cm−3. It was found that the transport properties strongly depend on the chemical composition of the alloy. The magnetic investigations included measurements of linear χ1 and harmonic χ2,3 ac susceptibilities as a function of temperature and of the applied magnetic field amplitude and frequency. Qualitative analysis of our experimental data showed that in the studied system, in the investigated composition range, the spin glass order exists at temperatures up to 50 K.

Homogeneous limit of Cd1−xMnxGeAs2 alloy: Electrical and magnetic properties

We present the studies of structural, electrical, and magnetic properties of bulk Cd1−xMnxGeAs2 crystals with low Mn content, x, varying from 0 to 0.037. The studied samples have excellent crystallographic quality indicated by the presence of diffraction patterns never before observed experimentally for this compound. The electrical transport in our samples is dominated by thermal activation of conducting holes from the impurity states to the valence band with activation energy of about 200 meV. The defect states acting as ionic scattering centers with concentration in the range from 6 to 15 × 1017 cm−3 are observed. The effective Mn content in our samples, x¯θ, determined from fit of the susceptibility data to the Curie-Weiss law, is very close to the average chemical content, x. It indicates that the Mn ions are distributed randomly, substituting the Cd sites in the host CdGeAs2 lattice. We observe a negative Curie-Weiss temperature, |θ|≤3.1 K, increasing as a function of x. This indicates the significa...

Low-dilution limit of Zn1−xMnxGeAs2: Electrical and magnetic properties

We present the studies of electrical transport and magnetic interactions in Zn1−xMnxGeAs2 crystals with low Mn content 0≤x≤0.042. We show that the ionic-acceptor defects are mainly responsible for the strong p-type conductivity of our samples. We found that the negative magnetoresistance with maximum values of about −50% is related to the weak localization phenomena. The magnetic properties of Zn1−xMnxGeAs2 samples show that the random Mn-distribution in the cation sites of the host lattice occurs only for the sample with the lowest Mn-content, x = 0.003. The samples with higher Mn-content show a high level of magnetic frustration. Nonzero Curie-Weiss temperature observed in all our samples indicates that weak ferromagnetic (for x = 0.003) or antiferromagnetic (for x>0.005) interactions with the Curie-Weiss temperature, |Θ|<3 K, are present in this system. The Ruderman-Kittel-Kasuya-Yosida model, used to estimate the Mn-hole exchange integral Jpd for the diluted Zn0.997Mn0.003GeAs2 sample, makes possible ...

Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system

Magnetotransport properties of spin-glass-like Ge1−x−ySnxMnyTe mixed crystals with chemical composition changing in the range of 0.083≤x≤0.142 and 0.012≤y≤0.119 are presented. The observed negative magnetoresistance we attribute to two mechanisms, i.e., weak localization occurring at low fields and spin disorder scattering giving contribution mainly at higher magnetic fields. A pronounced hysteretic anomalous Hall effect (AHE) was observed. The estimated AHE coefficient shows a small temperature dependence and is dependent on Mn-content, with changes in the range of 10−7<RS<10−6m3/C. The scaling law analysis has proven that the AHE in this system is due to the extrinsic mechanisms, mainly due to the skew scattering accompanied with the side jump processes.

Emergence of pressure-induced metamagnetic-like state in Mn-doped CdGeAs2 chalcopyrite

The effect of hydrostatic pressure on resistivity and magnetic ac susceptibility has been studied in Mn-doped CdGeAs2 room-temperature (RT) ferromagnetic chalcopyrite with two types of MnAs micro-clusters. The slight increase of temperature by about 30 K in the region between RT and Curie temperature TC causes a significant change in the positions of pressure-induced semiconductor-metal transition and magnetic phase transitions in low pressure area. By conducting measurements of the anomalous Hall resistance in the field H ≤ 5 kOe, we present experimental evidence for pressure-induced metamagnetic-like state during the paramagnetic phase at pressure P ≈ 5 GPa.

Magnetic and electric properties of manganese-doped ZnSiAs2

A new p-type dilute magnetic semiconductor was synthesized on the basis of manganese-doped ZnSiAs2 chalcopyrite. As the manganese percentage in ZnSiAs2 increased, the Curie temperature increased from 325 to 337 K for compositions containing 1 and 2 wt % manganese. The ferromagnetic properties of the new dilute magnetic semiconductor were due to nanoclusters that were generated by concurrent substitution of manganese for elements in the cationic sublattice of chalcopyrite.