L. L. Bonilla

Non-linear dynamics of semiconductor superlattices

In the last decade, non-linear dynamical transport in semiconductor superlattices (SLs) has witnessed significant progress in theoretical descriptions as well as in experimentally observed non-linear phenomena. However, until now, a clear distinction between non-linear transport in strongly and weakly coupled SLs was missing, although it is necessary to provide a detailed description of the observed phenomena. In this review, strongly coupled SLs are described by spatially continuous equations and display self-sustained current oscillations due to the periodic motion of a charge dipole as in the Gunn effect for bulk semiconductors. In contrast, weakly coupled SLs have to be described by spatially discrete equations. Therefore, weakly coupled SLs exhibit a more complex dynamical behaviour than strongly coupled ones, which includes the formation of stationary electric field domains, pinning or propagation of domain walls consisting of a charge monopole, switching between stationary domains, self-sustained current oscillations due to the recycling motion of a charge monopole and chaos. This review summarizes the existing theories and the experimentally observed non-linear phenomena for both types of semiconductor SLs.

Electrically tunable GHz oscillations in doped GaAs-AlAs superlattices

Tunable oscillatory modes of electric-field domains in doped semiconductor superlattices are reported. The experimental investigations demonstrate the realization of tunable, GHz frequencies in GaAs-AlAs superlattices covering the temperature region from 5 to 300 K. The orgin of the tunable oscillatory modes is determined using an analytical and a numerical modeling of the dynamics of domain formation. Three different oscillatory modes are found. Their presence depends on the actual shape of the drift velocity curve, the doping density, the boundary condition, and the length of the superlattice. For most bias regions, the self-sustained oscillations are due to the formation, motion, and recycling of the domain boundary inside the superlattice. For some biases, the strengths of the low- and high-field domain change periodically in time with the domain boundary being pinned within a few quantum wells. The dependency of the frequency on the coupling leads to the prediction of a different type of tunable GHz oscillator based on semiconductor superlattices.

Nonlinear stability of incoherence and collective synchronization in a population of coupled oscillators

A mean-field model of nonlinearly coupled oscillators with randomly distributed frequencies and subject to independent external white noises is analyzed in the thermodynamic limit. When the frequency distribution isbimodal, new results include subcritical spontaneous stationary synchronization of the oscillators, supercritical time-periodic synchronization, bistability, and hysteretic phenomena. Bifurcating synchronized states are asymptotically constructed near bifurcation values of the coupling strength, and theirnonlinear stability properties ascertained.

Dynamics of electric-field domains and oscillations of the photocurrent in a simple superlattice model.

A discrete model is introduced to account for the time-periodic oscillations of the photocurrent in a superlattice observed by Kwok et al. in an undoped 40-period AlAs/GaAs superlattice. The basic ingredients are an effective negative-differential resistance due to the sequential resonant tunneling of the photoexcited carriers through the potential barriers, and a rate equation for the holes that incorporates photogeneration and recombination. The photoexciting laser acts as a damping factor ending the oscillations when its power is large enough. The model explains (i) the known oscillatory static I-V characteristic curve through the formation of a domain wall connecting high- and low-electric-field domains, and (ii) the photocurrent and photoluminescence time-dependent oscillations after the domain wall is formed. In our model, they arise from the combined motion of the wall and the shift of the values of the electric field at the domains. Up to a certain value of the photoexcitation, the nonuniform field profile with two domains turns out to be metastable: after the photocurrent oscillations have ceased, the field profile slowly relaxes toward the uniform stationary solution (which is reached on a much longer time scale). Multiple stability of stationary states and hysteresis are also found. An interpretation of the oscillations in the photoluminescence spectrum is also given.

Time-periodic phases in populations of nonlinearly coupled oscillators with bimodal frequency distributions

Abstract The mean field Kuramoto model describing the synchronization of a population of phase oscillators with a bimodal frequency distribution is analyzed (by the method of multiple scales) near regions in its phase diagram corresponding to synchronization to phases with a time-periodic order parameter. The richest behavior is found near the tricritical point where the incoherent, stationarily synchronized, “traveling wave” and “standing wave” phases coexist. The behavior near the tricritical point can be extrapolated to the rest of the phase diagram. Direct Brownian simulation of the model confirms our findings.

Theory of nonlinear charge transport, wave propagation, and self-oscillations in semiconductor superlattices

Nonlinear charge transport in semiconductor superlattices under strong electric fields parallel to the growth direction results in rich dynamical behaviour including the formation of electric field domains, pinning or propagation of domain walls, self-sustained oscillations of the current and chaos. Theories of these effects use reduced descriptions of transport in terms of average charge densities, electric fields, etc. This is simpler when the main transport mechanism is resonant tunnelling of electrons between adjacent wells followed by fast scattering between subbands. In this case, we will derive microscopically appropriate discrete models and boundary conditions. Their analyses reveal differences between low-field behaviour where domain walls may move oppositely or parallel to electrons, and high-field behaviour where they can only follow the electron flow. The dynamics is controlled by the amount of charge available in the superlattice and doping at the injecting contact. When the charge inside the wells becomes large, boundaries between electric field domains are pinned resulting in multistable stationary solutions. Lower charge inside the wells results in self-sustained oscillations of the current due to recycling and motion of domain walls, which are formed by charge monopoles (high contact doping) or dipoles (low contact doping). Besides explaining wave motion and subsequent current oscillations, we will show how the latter depend on such controlling parameters as voltage, doping, temperature, and photoexcitation.

CHAOS IN RESONANT-TUNNELING SUPERLATTICES

Spatiotemporal chaos is predicted to occur in n-doped semiconductor superlattices with sequential resonant tunneling as their main charge transport mechanism. Under dc voltage bias, undamped time-dependent oscillations of the current (due to the motion and recycling of electric field domain walls) have been observed in recent experiments. Chaos is the result of forcing this natural oscillation by means of an appropriate external microwave signal.

High-field limit of the Vlasov-Poisson-Fokker-Planck system: A comparison of different perturbation methods

A reduced drift-diffusion (Smoluchowski–Poisson) equation is found for the electric charge in the high-field limit of the Vlasov–Poisson–Fokker–Planck system, both in one and three dimensions. The corresponding electric field satisfies a Burgers equation. Three methods are compared in the one-dimensional case: Hilbert expansion, Chapman–Enskog procedure and closure of the hierarchy of equations for the moments of the probability density. Of these methods, only the Chapman–Enskog method is able to systematically yield reduced equations containing terms of different order.

Stable nonequilibrium probability densities and phase transitions for meanfield models in the thermodynamic limit

A nonlinear Fokker-Planck equation is derived to describe the cooperative behavior of general stochastic systems interacting via mean-field couplings, in the limit of an infinite number of such systems. Disordered systems are also considered. In the weak-noise limit; a general result yields the possibility of having bifurcations from stationary solutions of the nonlinear Fokker-Planck equation into stable time-dependent solutions. The latter are interpreted as non-equilibrium probability distributions (states), and the bifurcations to them as nonequilibrium phase transitions. In the thermodynamic limit, results for three models are given for illustrative purposes. A model of self-synchronization of nonlinear oscillators presents a Hopf bifurcation to a time-periodic probability density, which can be analyzed for any value of the noise. The effects of disorder are illustrated by a simplified version of the Sompolinsky-Zippelius model of spin-glasses. Finally, results for the Fukuyama-Lee-Fisher model of charge-density waves are given. A singular perturbation analysis shows that the depinning transition is a bifurcation problem modified by the disorder noise due to impurities. Far from the bifurcation point, the CDW is either pinned or free, obeying (to leading order) the Grüner-Zawadowki-Chaikin equation. Near the bifurcation, the disorder noise drastically modifies the pattern, giving a quenched average of the CDW current which is constant. Critical exponents are found to depend on the noise, and they are larger than Fishers values for the two probability distributions considered.

CURRENT-VOLTAGE CHARACTERISTIC AND STABILITY IN RESONANT-TUNNELING N-DOPEDSEMICONDUCTOR SUPERLATTICES

We review the occurrence of electric-field domains in doped superlattices within a discrete drift model. A complete analysis of the construction and stability of stationary field profiles having two domains is carried out. As a consequence, we can provide a simple analytical estimation for the doping density above which stable stable domains occur. This bound may be useful for the design of superlattices exhibiting self-sustained current oscillations. Furthermore we explain why stable domains occur in superlattices in contrast to the usual Gunn diode.