L. M. R. Scolfaro

Study of the oxygen vacancy influence on magnetic properties of Fe- and Co-doped SnO2 diluted alloys

Transition-metal (TM)-doped diluted magnetic oxides (DMOs) have attracted attention from both experimental and theoretical points of view due to their potential use in spintronics towards new nanostructured devices and new technologies. In the present work, we study the magnetic properties of Sn0.96TM0.04O2 and Sn0.96TM0.04O1.98(VO)0.02, where TM = Fe and Co, focusing in particular in the role played by the presence of O vacancies nearby the TM. The calculated total energy as a function of the total magnetic moment per cell shows a magnetic metastability, corresponding to a ground state, respectively, with 2 and 1 μB/cell, for Fe and Co. Two metastable states, with 0 and 4 μB/cell were found for Fe, and a single value, 3 μB/cell, for Co. The spin-crossover energies (ES) were calculated. The values are ES0/2 = 107 meV and ES4/2 = 25 meV for Fe. For Co, ES3/1 = 36 meV. By creating O vacancies close to the TM site, we show that the metastablity and ES change. For iron, a new state appears, and the state with zero magnetic moment disappears. The ground state is 4 μB/cell instead of 2 μB/cell, and the energy ES2/4 is 30 meV. For cobalt, the ground state is then found with 3 μB/cell and the metastable state with 1 μB/cell. The spin-crossover energy ES1/3 is 21 meV. Our results suggest that these materials may be used in devices for spintronic applications that require different magnetization states.

Structural, electronic, vibrational and dielectric properties of selected high-shape K semiconductor oxides

The semiconductor oxides SnO2, HfO2, ZrO2, TiO2 and SrTiO3 are interesting materials for applications as high-K dielectric gate materials in silicon-based devices and spintronics, among others. Here we review our theoretical work about the structural, electronic and vibrational properties of these oxides in their most stable structural phases, including dielectric properties as derived from the electronic structure taking into account the lattice contribution. Finally, we address the recent role played by the presence of transition metal atoms in semiconductor oxides, considering in particular SnO2 as an example in forming diluted magnetic alloys.

Electronic and magnetic properties of SnO2/CrO2 thin superlattices.

In this article, using first-principles electronic structure calculations within the spin density functional theory, alternated magnetic and non-magnetic layers of rutile-CrO2 and rutile-SnO2 respectively, in a (CrO2)n(SnO2)nsuperlattice (SL) configuration, with n being the number of monolayers which are considered equal to 1, 2, ..., 10 are studied. A half-metallic behavior is observed for the (CrO2)n(SnO2)nSLs for all values of n. The ground state is found to be FM with a magnetic moment of 2 μB per chromium atom, and this result does not depend on the number of monolayers n. As the FM rutile-CrO2 is unstable at ambient temperature, and known to be stabilized when on top of SnO2, the authors suggest that (CrO2)n(SnO2)nSLs may be applied to spintronic technologies since they provide efficient spin-polarized carriers.

Density functional theory + U modeling of polarons in organohalide lead perovskites

We investigate the possible formation of polarons in four organic perovskites (CH3NH3PbI3, CH3NH3PbBr3, CH3NH3PbCl3, and CH3NH3PbI2Cl1) using a density functional theory (DFT) calculations with local potentials and hybrid functionals. We show that DFT+U method with U = 8 eV predicts a correct band-gap and matches the forces on ions from hybrid calculations. We then use the DFT + U approach to study the effect of polarons, i.e. to search the configuration space and locate the lowest energy localized band gap state self-trapped hole (STH). STH configurations were found for three pure halides and one mixed halide system. Spin orbit coupling (SOC) was also taken into account and the results may be found in the supplementary material. This study focuses on the +U method; however, SOC corrections added to the DFT+U calculations also resulted in STH states in all four systems.

Native defects as sources of optical transitions in MgAl2O4 spinel

The outstanding physical and chemical properties of the magnesium aluminate (MgAl2O4) spinel makes it an important material for novel technological applications. Considering that a presence of native defects can promote important changes in those properties, in this work we present a study of the structural, electronic and thermodynamic properties of the MgAl2O4 spinel. The calculated formation energy for isolated defects, such as the vacancies of magnesium (V Mg), aluminum (V Al) and oxygen (V O), oxygen interstitial (Oi), magnesium and aluminum antisites (MgAl, AlMg), as well as some complex defects (V O + Oi, V O + AlMg, V O + MgAl, MgAl + AlMg) in the most stable charge states are shown. Through experimental data, we obtained that complex defects centers, such as V O , V O + Oi, V O + AlMg and VO + MgAl at different charge states are good candidates for the observed optical transitions at 4.75, 5.3, and 6.4 eV. Our findings were obtained from ab initio electronic structure calculations performed by using density functional theory. The Perdew–Burke–Ernzerhof generalized gradient approximation was used for the exchange-correlation potential. Furthermore, a modified Becke-Johnson exchange potential (GGA-mBJ) correction to the exchange potential were used to obtain a suitable value for the band gap energy, 7.40 eV, in accordance with the experimental one of 7.8 eV.

Spin-polarization effects in homogeneous and non-homogeneous diluted magnetic semiconductor heterostructures

Spin polarization is a key characteristic in developing spintronic devices. Diluted magnetic heterostructures (DMH), where subsequent layers of conventional and diluted magnetic semiconductors (DMS) are alternate, are one of the possible ways to obtain it. Si being the basis of modern electronics, Si or other group-IV DMH can be used to build spintronic devices directly integrated with conventional ones. In this work we study the physical properties and the spin-polarization effects of p-type DMH based in group-IV semiconductors (Si, Ge, SiGe, and SiC), by performing self-consistent [Formula: see text] calculations in the local spin density approximation. We show that high spin polarization can be maintained in these structures below certain values of the carrier concentrations. Full spin polarization is attained in the low carrier concentration regime for carrier concentrations in the DMS layer up to approximately 2.0 x 10(19) cm(-3) for Si and up to approximately 6.0 x 10(19) cm(-3) for SiC. Partial, but still important spin polarization can be achieved for all studied group-IV DMH, with the exception of Ge for carrier concentrations up to 6.0 x 10(19) cm(-3). The role played by the effective masses and the energy splitting of the spin-orbit split-off hole bands is also discussed throughout the paper.

Lattice dynamics of Ga1−xMnxN and Ga1−xMnxAs by first-principle calculations

In this work, we present theoretical results, using first-principle methods associated to the virtual crystal approximation model, for the vibrational mode frequencies of both the Ga1−xMnxN (in both cubic and hexagonal structures) and the Ga1−xMnxAs alloys, with the Mn contents in the range of 0% to 20%. The dependence of the calculated phonon frequencies with the Mn content was analyzed, and the results indicate that the phonon frequencies decrease with the increasing of Mn composition, leading to the false impression that they obey the Vegard rule in some cases. Moreover, the hexagonal Ga1−xMnxN alloys are elastically unstable for Mn concentrations at the order of 20%, which explains in part the experimentally observed deterioration of these alloys. These findings can be used in future technologies as a guide for the synthesis of spintronic nanostructured devices, such as nanowires, based on these materials.

Electronic and optical properties of antiferromagnetic iron doped NiO – A first principles study

Antiferromagnetic NiO is a candidate for next generation high-speed and scaled RRAM devices. Here, electronic and optical properties of antiferromagnetic NiO: Fe 25% in the rock salt structure are studied and compared to intrinsic NiO. From density of states and complex dielectric function analysis, the first optical transition is found to be at lower frequency than intrinsic NiO due to an Fe impurity level being the valence band maximum. The resulting effects on refractive index, reflectivity, absorption, optical conductivity and loss function for Fe-doped NiO are compared to those of intrinsic NiO, and notable differences are analyzed. The electronic component of the static dielectric constant of NiO: Fe 25% is calculated to be about 2% less than that of intrinsic NiO.

Frequency Dependence of the Dielectric Constants and of the Reflectivity for HfO2 and ZrO2 from First‐Principles Calculations

We present, in this work, our theoretical results for the phonon dispersions and the frequency dependence of the reflectivities and the dielectric constants of ZrO2 and HfO2 in the monoclinic phase. The results show the importance of the lattice contribution for the evaluation of the static dielectric constant. Also, besides the anisotropy shown by these materials along the x and z directions, the zero frequency static dielectric constant decreases with the increasing pressure.

Ab initio Results for the Structural and Electronic Properties of Intrinsic Defects in PbTe

In this work, we have performed spin-polarized calculations for the structural and electronic properties of vacancies and anti-site defects in the rocksalt PbTe. Our obtained results have shown that both the Pb and Te antisites are the favorable defects in Pb and Te rich conditions, respectively. Moreover, in the perfect stoichiometry condition, the antisites, as well as the Te vacancy, are equally probable to find. Considering the charge injection in the system, all the defects change from the 2+ charge state to the 2one within 14 meV, at around 80 meV from the valence band edge within the bandgap. This feature makes it difficult to experimentally characterize these defects in PbTe.