L.M. Zinkiewicz

Recent Development In 0.83 µm Superluminescent Diodes At TRW

Three modifications of the twin channel laser structure have been fabricated and characterized for continuous wave power and spectral limitations in superluminiscent diode (SLD) behavior. The conventional antireflective coating technique produced lasing - limited power less than 10mW. Fabry-Perot spectral modulation was typically greater than 50 percent at 7mW. The angle stripe approach yielded thermal - rollover limited powers of 30mW. Spectral halfwidth of 160 Å and 5% Fabry-Perot modulation were typical. The truncated stripe structure produced 15mW.

Improved high power twin channel laser with blocking layer

There is currently an urgent need for a GaAlAs/GaAs semiconductor laser having peak power capability of greater than one watt and CW power of 200 mW. These specifications can be met only with multi-element, array-type structures. We present an improved version of the twin channel laser as a prototype for a new concept in semiconductor laser array structures. The laser device constitutes the first array structure on a p-type GaAs substrate using current-blocking layers and yields improved current utilization and efficiency over previous structures.