L. Pintilie

Thermally stimulated current method applied on diodes with high concentration of deep trapping levels

We propose an improved method of thermally stimulated currents (TSC) spectra analysis in the case of diodes having a concentration of traps higher than that of doping impurities. Beside the calculation of trap concentrations from TSC peaks analysis, the method allows us to evaluate the density and the type of the very deep trapping level which, due to the contribution of leakage current, can not be detected in a real TSC experiment. The proposed method is applied to a p+-n Silicon diode irradiated with 1.82×1013neutrons/cm2.

Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p–n Si junctions using optical charging spectroscopy

Optical charging spectroscopy (OCS) is first time reported as applied to p–n junctions. The existence of one deep trapping level for electrons and two deep trapping levels for holes was put into evidence, using this method, in proton irradiated p+–n–n+ silicon structures. An analytical formula for the OCS discharging current for this type of structures was deduced.