L. Sheng

Time-reversal-symmetry-broken quantum spin Hall effect.

The quantum spin Hall (QSH) state of matter is usually considered to be protected by time-reversal (TR) symmetry. We investigate the fate of the QSH effect in the presence of the Rashba spin-orbit coupling and an exchange field, which break both inversion and TR symmetries. It is found that the QSH state characterized by nonzero spin Chern numbers C(±) = ±1 persists when the TR symmetry is broken. A topological phase transition from the TR-symmetry-broken QSH phase to a quantum anomalous Hall phase occurs at a critical exchange field, where the bulk band gap just closes. It is also shown that the transition from the TR-symmetry-broken QSH phase to an ordinary insulator state cannot happen without closing the band gap.

Nondissipative spin Hall effect via quantized edge transport.

The spin Hall effect in a two-dimensional electron system on honeycomb lattice with both intrinsic and Rashba spin-orbit couplings is studied numerically. Integer quantized spin Hall conductance is obtained at the zero Rashba coupling limit when electron Fermi energy lies in the energy gap created by the intrinsic spin-orbit coupling, in agreement with recent theoretical prediction. While nonzero Rashba coupling destroys electron spin conservation, the spin Hall conductance is found to remain near the quantized value, being insensitive to disorder scattering, until the energy gap collapses with increasing the Rashba coupling. We further show that the charge transport through counterpropagating spin-polarized edge channels is well quantized, which is associated with a topological invariant of the system.

Connection of Edge States to Bulk Topological Invariance in a Quantum Spin Hall State

We propose a topological understanding of the quantum spin Hall state without considering any symmetries, and it follows from the gauge invariance that either the energy gap or the spin spectrum gap needs to close on the system edges, the former scenario generally resulting in counterpropagating gapless edge states. Based upon the Kane-Mele model with a uniform exchange field and a sublattice staggered confining potential near the sample boundaries, we demonstrate the existence of such gapless edge states and their robust properties in the presence of impurities. These gapless edge states are protected by the band topology alone, rather than any symmetries.

Floquet Weyl semimetal induced by off-resonant light

We propose that a Floquet Weyl semimetal state can be induced in three-dimensional topological insulators, either nonmagnetic or magnetic, by the application of off-resonant light. The virtual photon processes play a critical role in renormalizing the Dirac mass and so resulting in a topological semimetal with vanishing gap at Weyl points. The present mechanism via off-resonant light is quite different from that via on-resonant light, the latter being recently suggested to give rise to a Floquet topological state in ordinary band insulators.

Specular Andreev reflection in inversion-symmetric Weyl semimetals

The electron-hole conversion at the normal-metal superconductor interface in inversion-symmetric Weyl semimetals is investigated with an effective two-band model. We find that the specular Andreev reflection of Weyl fermions has two unusual features. The Andreev conductance for s-wave BCS pairing states is anisotropic, depending on the angle between the line connecting a pair of Weyl points and the normal of the junction, due to opposite chirality carried by the paired electrons. For the Fulde-Ferrell-Larkin-Ovchinnikov pairing states, the Andreev reflection spectrum is isotropic and is independent of the finite momentum of the Cooper pairs.

Thermoelectric and thermal transport in bilayer graphene systems

We numerically study the disorder effect on the thermoelectric and thermal transport for bilayer graphene under a strong perpendicular magnetic field. In the unbiased case, we find that the thermoelectric transport has similar properties as in the monolayer graphene, i.e., the Nernst signal has a peak at the central Landau level (LL) with the value of the order of

Quantum Hall effect in biased bilayer graphene

k_B/e

Effect of the edge states on the conductance and thermopower in zigzag phosphorene nanoribbons

and changes sign near other LLs while the thermopower has an opposite behavior. We attribute this to the coexistence of particle and hole LLs around the Dirac point. When a finite interlayer bias is applied and a band gap is opened, it is found that the transport properties are consistent with those of a band insulator. We further study the thermal transport from electronic origins and verify the validity of the generalized Weidemann-Franz law.

Quantum Hall effect in bilayer graphene: disorder effect and quantum phase transition

We numerically study the quantum Hall effect in biased bilayer graphene based on a tight-binding model in the presence of disorder. Integer quantum Hall plateaus with quantized conductivity σxy=νe2/h (where ν is an integer) are observed around the band center due to the split of the valley degeneracy by an opposite voltage bias added to the two layers. The central (n=0) Dirac-Landau level is also split, which leads to a pronounced ν=0 plateau. This is consistent with the opening of a sizable gap between the valence and conduction bands. The exact spectrum in an open system further reveals that there are no conducting edge states near zero energy, indicating an insulator state with zero conductance. Consequently, the resistivity should diverge at the Dirac point. Interestingly, the ν=0 insulating state can be destroyed by disorder scattering with intermediate strength, where a metallic region is observed near zero energy. In the strong-disorder regime, the Hall plateaus with nonzero ν are destroyed due to the float-up of extended levels toward the band center and higher plateaus disappear first.

Topological phase transitions with and without energy gap closing

We study numerically the effect of the edge states on the conductance and thermopower in zigzag phosphorene nanoribbons (ZPNRs) based on the tight-binding model and the scattering-matrix method. It is interesting to find that the band dispersion, conductance, and thermopower can be modulated by applying a bias voltage and boundary potentials to the two layers of the ZPNRs. Under a certain bias voltage, the twofold-degenerate quasi-flat-edge bands split perfectly. The conductance can be switched off, and the thermopower around zero energy increases. In addition, when only the boundary potential of the top layer or bottom layer is adjusted, only one edge band bends and merges into the bulk band. The first conductance plateau is strongly decreased to