L.W. Yang

In situ synthesis of Mn-doped ZnO multileg nanostructures and Mn-related Raman vibration

Mn-doped ZnO multileg nanostructures were synthesized via in situ thermal oxidation of Zn and MnO2 powder. Spectroscopic measurements show that Mn ions have been doped into the lattice positions of Zn ions, which strongly induce growth of the observed ZnO multileg nanostructure. It is revealed that the growth mechanism of this kind of multileg ZnO:Mn nanostructure is different from the traditional vapor–solid or vapor–liquid–solid nucleation model of ZnO nanostructures. A possible mechanism is discussed on the basis of the growth process of a tetrapod ZnO nanostructure. Furthermore, we report the observation of an additional Raman peak. This peak is considered to have an origin related to Mn dopant in the ZnO nanostructure. This Raman feature can be regarded as an indicator for the incorporation of Mn ions into the lattice positions of the multileg ZnO nanostructure.

Synthesis and magnetic properties of Zn1−xCoxO nanorods

Magnetic Zn1−xCoxO nanorods were fabricated via direct hydrothermal synthesis. The measurements of x-ray diffraction, x-ray photoemission spectroscopy, and optical absorption spectra demonstrate the presence of cobalt in the +2 state in a tetrahedral crystal field, which indicates that Co ions have been doped into the nanorods. The observations of morphology and microstructure reveal that the Zn1−xCoxO nanorods grow along the [0002] direction through Ostwald ripening not only competing with but being assisted by oriented attachment. The field dependence of magnetization (M-H curves) of the Zn1−xCoxO nanorods measured at 300K shows their ferromagnetic characteristics. The coercive fields (Hc) were obtained to be 98 and 36Oe for nominal x=0.029 and 0.056, respectively. Our experimental results provide one effective method for fabrication of transition metal doped ZnO nanostructures with room-temperature ferromagnetism by direct chemical synthesis.

Local vibration at the surface of a Ge nanocrystal embedded in a silicon oxide matrix

A low-frequency Raman vibration mode, whose peak position and linewidth are independent of the sizes of Ge nanocrystals and the polarization configuration of incident excitation light, was observed in silicon oxide films embedded with Ge nanocrystals which were prepared using magnetron cosputtering of SiO2–Ge–Si targets. The peak position of the Raman mode is sensitive to the content of Si in the matrix. After the sample is annealed above a special temperature that increases with the content of Si, the Raman mode disappears. Microstructural observations and spectral analyses disclose that this low-frequency Raman mode arises from a local structure which is positioned at the surfaces of Ge nanocrystals and consists of Ge, Si, and O atoms. High-temperature annealing leads to the removal of Ge atoms from the local structure. As a result, the local vibration mode vanishes.

3C-SiC nanocrystals/TiO2 nanotube heterostructures with enhanced photocatalytic performance

p-type ultrathin 3C-SiC nanocrystals are coated on heat-treated n-type TiO2 nanotube arrays formed by electrochemical etching of Ti sheets to produce heterostructured photocatalysts. Depending on the amounts of 3C-SiC nanocrystals on the TiO2 nanotubes, photocatalytic degradation of organic species can be enhanced. The intrinsic electric field induced by the heterojunction promotes separation of the photoexcited electrons-holes in both the TiO2 nanotubes and 3C-SiC nanocrystals. Hence, holes can more effectively travel to the surface of 3C-SiC nanocrystals and there are more electrons on the surface of TiO2 nanotubes consequently forming more •O2− and •OH species to degrade organic molecules.

High-Quality Crystal Growth and Characteristics of AlGaN-Based Solar-Blind Distributed Bragg Reflectors with a Tri-layer Period Structure.

To realize AlGaN-based solar-blind ultraviolet distributed Bragg reflectors (DBRs), a novel tri-layer AlGaN/AlInN/AlInGaN periodical structure that differs from the traditional periodically alternating layers of high- and low-refractive-index materials was proposed and grown on an Al0.5Ga0.5N template via metal-organic chemical vapour deposition. Because of the intentional design of the AlInGaN strain transition layer, a state-of-the-art DBR structure with atomic-level-flatness interfaces was achieved using an AlGaN template. The fabricated DBR exhibits a peak reflectivity of 86% at the centre wavelength of 274 nm and a stopband with a full-width at half-maximum of 16 nm.

3C-SiC/ZnS heterostructured nanospheres with high photocatalytic activity and enhancement mechanism

3C-SiC/n-type ZnS heterostructured nanospheres synthesized hydrothermally deliver enhanced photocatalytic performance under visible light excitation. The heterostructured catalysts consisting of 3C-SiC and ZnS nanocrystals with a mean size being less than 5 nm exhibit extended light absorption to the visible range. The proper band structure of the 3C-SiC and ZnS nanocrystals and intrinsic electric field induced by the heterojunction promote separation of photoexcited electrons and holes in the ZnS and 3C-SiC nanocrystals resulting in the increased photocatalytic efficiency. The associated mechanism is studied and proposed.

Photoluminescence Study of the Photoinduced Phase Separation in Mixed-Halide Hybrid Perovskite CH 3 NH 3 Pb(Br x I 1−x ) 3 Crystals Synthesized via a Solvothermal Method

We systematically synthesized mixed-halide hybrid perovskite CH3NH3Pb(BrxI1−x)3 (0 ≤ x ≤ 1) crystals in the full composition range by a solvothermal method. The as-synthesized crystals retained cuboid shapes, and the crystalline structure transitioned from the tetragonal phase to the cubic phase with an increasing Br-ion content. The photoluminescence (PL) of CH3NH3Pb(BrxI1−x)3 crystals exhibited a continuous variation from red (768 nm) to green (549 nm) with increasing the volume ratio of HBr (VHBr%), corresponding to a variation in the bandgap from 1.61 eV to 2.26 eV. Moreover, the bandgap of the crystals changed nonlinearly as a quadratic function of x with a bowing parameter of 0.53 eV. Notably, the CH3NH3Pb(BrxI1−x)3 (0.4 ≤ x ≤ 0.6) crystals exhibited obvious phase separation by prolonged illumination. The cause for the phase separation was attributed to the formation of small clusters enriched in lower-band-gap, iodide-rich and higher-band-gap, bromide-rich domains, which induced localized strain to promote halide phase separation. We also clarified the relationship between the PL features and the band structures of the crystals.

High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure as Separate Absorption and Multiplication Regions

It is well known that -nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electric fields. To take full advantage of the polarization electric field, we design an N-face AlGaN solar-blind avalanche photodiode (APD) with an Al0.45Ga0.55N/Al0.3Ga0.7N heterostructure as separate absorption and multiplication (SAM) regions. The simulation results show that the N-face APDs are more beneficial to improving the avalanche gain and reducing the avalanche breakdown voltage compared with the Ga-face APDs due to the effect of the polarization electric field. Furthermore, the Al0.45Ga0.55N/Al0.3Ga0.7N heterostructure SAM regions used in APDs instead of homogeneous Al0.45Ga0.55N SAM structure can increase significantly avalanche gain because of the increased hole ionization coefficient by using the relatively low Al-content AlGaN in the multiplication region. Meanwhile, a quarter-wave AlGaN/AlN distributed Bragg reflector structure at the bottom of the device is designed to remain a solar-blind characteristic of the heterostructure SAM-APDs.

An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization*

To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al0.3Ga0.7N/Al0.45Ga0.55N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al0.3Ga0.7N which has about a six times higher hole ionization coefficient than the high-Al-content Al0.45Ga0.55N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave AlGaN/AlN distributed Bragg reflectors structure at the bottom of the device.