Laigui Hu

High-speed underwater optical wireless communication using a blue GaN-based micro-LED

High-speed underwater optical wireless communication (UOWC) was achieved using an 80 μm blue-emitting GaN-based micro-LED. The micro-LED has a peak emission wavelength of ~440 nm and an underwater power attenuation of 1 dB/m in tap water. The -3 dB electrical-to-optical modulation bandwidth of the packaged micro-LED increases with increasing current and saturates at ~160 MHz. At an underwater distance of 0.6 m, 800 Mb/s data rate was achieved with a bit error rate (BER) of 1.3 × 10-3, below the forward error correction (FEC) criteria. And we obtained 100 Mb/s data communication speed with a received light output power of -40 dBm and a BER of 1.9 × 10-3, suggesting that UOWC with extended distance can be achieved. Through reflecting the light emission beam by mirrors within a water tank, we experimentally demonstrated a 200 Mb/s data rate with a BER of 3.0 × 10-6 at an underwater distance of 5.4 m.

34.5 m underwater optical wireless communication with 2.70 Gbps data rate based on a green laser diode with NRZ-OOK modulation.

This study proposed and experimentally demonstrated a high-speed long-distance underwater optical wireless communication (UOWC) system using a 520 nm green laser diode (LD) with non-return-to-zero on-off keying (NRZ-OOK) modulation scheme. The UOWC link offers maximum data rates up to 4.60 Gbps, 3.93 Gbps, 3.48 Gbps and 2.70 Gbps over the underwater distances of 2.3 m, 11.5 m, 20.7 m and 34.5 m with the bit-error rates below the forward error correction (FEC) criterion of 3.8 χ 10−3. To the best of our knowledge, UOWC data rate of 2.70 Gbps at 34.5 m is the highest at present.

A real-time Raman spectroscopy study of the dynamics of laser-thinning of MoS2 flakes to monolayers

Transition metal dichalcogenides (TMDCs) in monolayer form have attracted a great deal of attention for electronic and optical applications. Compared to mechanical exfoliation and chemical synthesis, laser thinning is a novel and unique “on-demand” approach to fabricate monolayers or pattern desired shapes with high controllability and reproducibility. Its successful demonstration motivates a further exploration of the dynamic behaviour of this local thinning process. Here, we present an in-situ study of void formation by laser irradiation with the assistance of temporal Raman evolution. In the analysis of time-dependent Raman intensity, an empirical formula relating void size to laser power and exposure time is established. Void in thinner MoS2 flakes grows faster than in thicker ones as a result of reduced sublimation temperature in the two-dimensional (2D) materials. Our study provides useful insights into the laser-thinning dynamics of 2D TMDCs and guidelines for an effective control over the void for...

Competing Mechanisms for Photocurrent Induced at the Monolayer-Multilayer Graphene Junction

Graphene is characterized by demonstrated unique properties for potential novel applications in photodetection operated in the frequency range from ultraviolet to terahertz. To date, detailed work on identifying the origin of photoresponse in graphene is still ongoing. Here, scanning photocurrent microscopy to explore the nature of photocurrent generated at the monolayer-multilayer graphene junction is employed. It is found that the contributing photocurrent mechanism relies on the mismatch of the Dirac points between the monolayer and multilayer graphene. For overlapping Dirac points, only photothermoelectric effect (PTE) is observed at the junction. When they do not coincide, a different photocurrent due to photovoltaic effect (PVE) appears and becomes more pronounced with larger separation of the Dirac points. While only PTE is reported for a monolayer-bilayer graphene junction in the literature, this work confirms the coexistence of PTE and PVE, thereby extending the understanding of photocurrent in graphene-based heterojunctions.

Direct laser writing of vertical junctions in graphene oxide films for broad spectral position-sensitive detectors

Abstract Heterostructures with built-in electric fields are crucial for charge separation and lateral photovoltaic effect in current position-sensitive detectors (PSDs), which have to be produced by combining semiconductors with metal or other semiconductors to form various vertical junctions (e.g. Schottky junctions) via complicated and high-cost manufacture processes. In the present work, it was found that vertical junctions can be directly written and patterned inside graphene oxide (GO) films with gradient C/O ratios by laser scribing due to the optical filter effect of the films and the formation of reduced GO (rGO) layers. Such junctions were verified to show the capability for high-precision position sensing on the micrometer scale, owing to the lateral photovoltaic effect. These self-powered laser-scribed PSDs can exhibit a small nonlinearity of <5.4%, which is far less than the acceptable level of 15%. A fast response time of about 1 ms can be obtained under a zero bias voltage, which is the fastest speed among the photodetectors based on pure rGO. Electron lateral diffusion in the upper layers of the laser-scribed devices was found to play a main role. These suggest that laser-scribed vertical junctions inside rGO are promising for high-precision displacement sensing, with the capability of low cost, flexibility, and passive operation mode.

Intrinsic excitonic emission and valley Zeeman splitting in epitaxial MS2 (M = Mo and W) monolayers on hexagonal boron nitride

Two-dimensional (2D) semiconductors, represented by 2D transition metal dichalcogenides (TMDs), exhibit rich valley physics due to strong spin-orbit/spin-valley coupling. The most common way to probe such 2D systems is to utilize optical methods, which can monitor light emissions from various excitonic states and further help in understanding the physics behind such phenomena. Therefore, 2D TMDs with good optical quality are in great demand. Here, we report a method to directly grow epitaxial WS2 and MoS2 monolayers on hexagonal boron nitride (hBN) flakes with a high yield and high optical quality; these monolayers show better intrinsic light emission features than exfoliated monolayers from natural crystals. For the first time, the valley Zeeman splitting of WS2 and MoS2 monolayers on hBN has been visualized and systematically investigated. This study paves a new way to produce high optical quality WS2 and MoS2 monolayers and to exploit their intrinsic properties in a multitude of applications.

Photovoltage Reversal in Organic Optoelectronic Devices with Insulator-Semiconductor Interfaces

Photoinduced space-charges in organic optoelectronic devices, which are usually caused by poor mobility and charge injection imbalance, always limit the device performance. Here we demonstrate that photoinduced space-charge layers, accumulated at organic semiconductor-insulator interfaces, can also play a role for photocurrent generation. Photocurrent transients from organic devices, with insulator-semiconductor interfaces, were systematically studied by using the double-layer model with an equivalent circuit. Results indicated that the electric fields in photoinduced space-charge layers can be utilized for charge generation and can even induce a photovoltage reversal. Such an operational process of light harvesting would be promising for photoelectric conversion in organic devices.

Graphene based field effect transistors for novel nonvolatile memories

Graphene based field effect transistors (GFETs) are quite sensitive to surface effects, such as the influence from surface adsorbents. In this work, it demonstrates the meta/ferroelectric [P(VDF-TrFE)]/graphene(MFG) configuration can realize the novel nonvolatile memories where competition between the ferroelectric polarization and charging / discharging of graphene / interface traps has been addressed.