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Dive into the research topics where Larry A. Coldren is active.

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Featured researches published by Larry A. Coldren.


Novel In-Plane Semiconductor Lasers II | 2003

High performance widely-tunable SG-DBR lasers

M.C. Larson; Yuliya A. Akulova; Christopher W. Coldren; Thomas Liljeberg; Gregory A. Fish; S. Nakagawa; Anders Dahl; P. Kozodoy; Doreen Bingo; Ming Bai; Nitya Ramdas; Steven Penniman; T. Wipiejewski; Larry A. Coldren

Widely-tunable sampled-grating distributed Bragg reflector (SG-DBR) lasers with integrated Semiconductor Optical Amplifiers (SOAs) simultaneously exhibit high (20 mW CW) fiber-coupled output power, high side mode suppression ratio, low noise (below -140 dB/Hz RIN), low line-width (<5 MHz), and high reliability, across a 40 nm C-band tuning range.


Symposium on Electro-Optics: Present and Future (1998), paper CB3 | 1998

Vertical-Cavity Lasers for Parallel Optical Interconnects

Larry A. Coldren; E.R. Hegblom; Yuliya A. Akulova; J. Ko; Eva M. Strzelecka; Syn-Yem Hu

Continuing increases in efficiency, uniformity, and yield for low-threshold dielectrically Apertured Vertical-Cavity Surface-Emitting Lasers (VCSELs) suggest that this new generation of sources may be ready for insertion into practical parallel interconnect systems. This paper will review the recent evolution of these devices, pointing out key enabling advances and potential roadblocks yet to be addressed. Included will be advances that have led to record low optical losses as well as record high wall-plug efficiency at powers of a few hundred microwatts, desirable for massively parallel optical interconnects. The use of engineered oxide apertures is a key element in these cases. Experimental results will also include recent free-space and WDM fiber interconnects. Remaining issues to be addressed include some sort of lateral carrier confinement, such as a buried-heterostructure, to reduce carrier losses as devices are scaled to small lateral dimensions.


Integrated Photonics Research and Applications/Nanophotonics for Information Systems (2005), paper IMC5 | 2005

Widely Tunable All-Optical Wavelength Converter Monolithically Integrated with a Total Internal Reflection Corner Mirror Delay Line for 40Gbps RZ Operation

Joseph A. Summers; Vikrant Lal; Milan L. Mašanović; Nadir Dagli; Larry A. Coldren; Daniel J. Blumenthal

This paper reports on a novel widely tunable all-optical wavelength converter monolithically integrated with a compact turning mirror delay for differential operation at 40Gbps RZ. Wavelength conversion is achieved over 25nm of device tuning range.


Integrated Photonics Research (1999), paper RME2 | 1999

Monolithic integration of a widely tunable laser and an electro-absorption modulator

Beck Mason; Greg A. Fish; Steven P. DenBaars; Larry A. Coldren

Widely tunable lasers are essential components for a wide variety of wavelength division multiplexing (WDM) and packet switching network architectures.


Integrated Photonics Research and Applications/Nanophotonics for Information Systems (2005), paper IMC3 | 2005

10Gbps Monolithically Integrated Widely Tunable Wavelength Converter Using Quantum Well Intermixing

Vikrant Lal; Milan L. Mašanović; Erik J. Skogen; James W. Raring; Joseph A. Summers; Larry A. Coldren; Daniel J. Blumenthal

We report on the implementation and performance of an InP centered quantum well intermixed, MZI-SOA all-optical wavelength-converter monolithically-integrated with an SGDBR. We show error-free operation at 10Gbps, and 3dBm output power over 30nm output tuning.


Integrated Photonics Research (2002), paper IFC2 | 2002

On tuning efficiency of sampled grating DBR lasers using quatnum well intermixing

Erik J. Skogen; Jonathon S. Barton; Steven P. DenBaars; Larry A. Coldren

Widely tunable SGDBR lasers present tremendous opportunities for developing high functionality photonic integrated circuits (PICs) for present wavelength division multiplexing (WDM) communication networks and as an enabling technology for developing future fiber optic networking architectures. The inherent difficulty in manufacturing these devices stems from the one dimensional growth platform used to produce the epitaxial material, whereas, the complex nature of PICs demand the integration of devices with differing functionality to be produced on the same chip. Due to the lithographically defined mirrors the SGDBR lends itself to integration with other components, such as semiconductor optical amplifiers, electro-absorption modulators, and passive waveguides [1,2]. Such devices including the sampled-grating DBR (SGDBR) require the structure to vary orthogonal to the growth direction.


Archive | 2012

Diode Lasers and Photonic Integrated Circuits: Coldren/Diode Lasers 2E

Larry A. Coldren; Scott W. Corzine; Milan L. Mašanović


Archive | 2003

Chirp control of integrated laser-modulators having multiple sections

T. Wipiejewski; Larry A. Coldren; David D. Lewis


Archive | 2002

Methods for robust channel switching of widely-tunable sampled-grating distributed bragg reflector lasers

M.C. Larson; Larry A. Coldren; T. Wipiejewski


Archive | 2001

High-power sampled grating distributed bragg reflector lasers

Larry A. Coldren; Gregory A. Fish; M.C. Larson

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Erik J. Skogen

Sandia National Laboratories

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A. C. Abare

University of California

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Chad S. Wang

University of California

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James S. Speck

University of California

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