Lars Samuelson

Electronic structure of strained InP/GaInP quantum dots

We calculate the electronic structure of nm scale InP islands embedded in

Electronic structure of strainedInP/Ga0.51In0.49Pquantum dots

Ga_{0.51}In_{0.49}P

Nanostructures and methods for manufacturing the same

. The calculations are done in the envelope approximation and include the effects of strain, piezoelectric polarization, and mixing among 6 valence bands. The electrons are confined within the entire island, while the holes are confined to strain induced pockets. One pocket forms a ring at the bottom of the island near the substrate interface, while the other is above the island in the GaInP. The two sets of hole states are decoupled. Polarization dependent dipole matrix elements are calculated for both types of hole states.

Optoelectronic semiconductor device

We calculate the electronic structure of nm scale InP islands embedded in

Thin Solid Films 364

Ga_{0.51}In_{0.49}P

Assembly of nanoscaled field effect transistors

. The calculations are done in the envelope approximation and include the effects of strain, piezoelectric polarization, and mixing among 6 valence bands. The electrons are confined within the entire island, while the holes are confined to strain induced pockets. One pocket forms a ring at the bottom of the island near the substrate interface, while the other is above the island in the GaInP. The two sets of hole states are decoupled. Polarization dependent dipole matrix elements are calculated for both types of hole states.