Lasse Vines

Lithium and electrical properties of ZnO

Hydrothermal grown n-type ZnO samples have been investigated by deep level transient spectroscopy (DLTS), thermal admittance spectroscopy (TAS), temperature dependent Hall effect (TDH) measurements, and secondary ion mass spectrometry (SIMS) after thermal treatments up to 1500 °C, in order to study the electrical properties of samples with different lithium content. The SIMS results showed that the most pronounced impurities were Li, Al, Si, Mg, Ni, and Fe with concentrations up to ∼5×1017 cm−3. The Li concentration was reduced from ∼1017 cm−3 in as-grown samples to ∼1015 cm−3 for samples treated at 1500 °C, while the concentration of all the other major impurities appeared stable. The results from DLTS and TAS displayed at least five different levels having energy positions of Ec−20 meV, Ec−55 meV, Ec−0.22 eV, Ec−0.30 eV, and Ec−0.57 eV (Ec denotes the conduction band edge), where the Ec−55 meV level is the dominant freeze out level for conduction electrons in samples treated at temperatures <1300 °C, wh...

Evolution of deep electronic states in ZnO during heat treatment in oxygen- and zinc-rich ambients

Hydrothermally grown ZnO samples have been annealed in Ar, Zn-rich, and O-rich ambients and investigated by deep level transient spectroscopy (DLTS). The DLTS measurements reveal up to 6 different defect levels in the band gap after different annealing conditions. A clear correlation has been found between the annealing treatment and the formation/suppression of two deep defect levels at ∼0.2 and ∼0.5 eV below the conduction band edge (Ec). As a result, the Ec-0.5eV level is assigned to a Zn-rich defect while the Ec-0.2eV level is due to a O-rich defect, where the latter shows donor behavior as revealed by a distinct Poole-Frenkel effect.

The E3 center in zinc oxide: Evidence for involvement of hydrogen

Proton implantation is shown to increase the concentration of the so called and commonly observed E3 defect level in zinc oxide (ZnO). Box and single profiles of protons with doses ranging from 6×1010 cm−2 to 4.3×1012 cm−2 were implanted into hydrothermally grown ZnO samples with original concentrations of E3 below 5×1014 cm−3. Capacitance-Voltage profiling and junction spectroscopy measurements showed that the charge carrier concentration and absolute concentration of E3 centers increase by more than one order of magnitude compared to the as-grown samples as well as control samples implanted with He ions. The results provide strong evidence for the involvement of H in the formation of the E3 center, and a complex involving interstitial H and an oxygen sub-lattice primary defect are discussed.

The work function of n-ZnO deduced from heterojunctions with Si prepared by ALD

Highly doped n-type ZnO films have been grown on n-type and p-type Si substrates by atomic layer deposition (ALD). Transmission electron microscopy shows columnar growth of the ZnO films with randomly oriented grains and a very thin interfacial layer of SiOx(x ≤ 2) with a thickness below 0.4 nm to the Si substrate. Current–voltage and capacitance–voltage measurements performed at temperatures from 50 to 300 K reveal a strong rectifying behaviour on both types of substrates with an ideality factor close to unity between 180 and 280 K. Using the classical approach of thermionic emission, the barrier heights of the ZnO/n-Si and ZnO/p-Si junctions have been deduced and consistent values are obtained yielding a work function of n-type ZnO close to 4.65 eV.

Defects in virgin hydrothermally grown n-type ZnO studied by temperature dependent Hall effect measurements

Temperature dependent Hall (TDH) effect measurements have been performed on three virgin and hydrothermally grown ZnO samples with resistivities between ∼5 and ∼200 Ω cm at room temperature. The electrical conduction observed experimentally in the temperature range of 330–70 K can be accurately described by three donor levels with positions 41–48, 60–66, and ∼300 meV below the conduction band edge (EC) and an acceptor level in the lower part of the energy band gap (EG). Correlation of the TDH data with results from secondary ion mass spectrometry and admittance spectroscopy on the same samples suggests a rather firm association of the intermediate donor level with complexes involving Al impurities, while the shallowest one is tentatively ascribed to H-related centers. A large fraction of the deep donor remains nonionized in the temperature range studied and contributes substantially to the neutral-impurity-scattering of the conducting electrons. A detailed analysis of the TDH data, using the relaxation ti...

Ultra-doped n-type germanium thin films for sensing in the mid-infrared

A key milestone for the next generation of high-performance multifunctional microelectronic devices is the monolithic integration of high-mobility materials with Si technology. The use of Ge instead of Si as a basic material in nanoelectronics would need homogeneous p- and n-type doping with high carrier densities. Here we use ion implantation followed by rear side flash-lamp annealing (r-FLA) for the fabrication of heavily doped n-type Ge with high mobility. This approach, in contrast to conventional annealing procedures, leads to the full recrystallization of Ge films and high P activation. In this way single crystalline Ge thin films free of defects with maximum attained carrier concentrations of 2.20 ± 0.11 × 1020 cm−3 and carrier mobilities above 260 cm2/(V·s) were obtained. The obtained ultra-doped Ge films display a room-temperature plasma frequency above 1,850 cm−1, which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range.

The use of nanocavities for the fabrication of ultrathin buried oxide layers

A continuous buried oxide layer with a thickness of only 58 nm is formed in silicon by oxygen implantation at 185 keV with a very low ion fluence of 1×1017 cm−2 and subsequent He implantation. Due to the implanted He efficient oxygen gettering occurs at the implantation induced damage and results in the accumulation of the implanted oxygen as well as of oxygen indiffused from the annealing atmosphere. The morphology and the resistivity of the resulting silicon-on-insulator structure are analyzed by cross section transmission electron microscopy and by cross section scanning spreading resistance microscopy.

Acceptor-like deep level defects in ion-implanted ZnO

This work was supported by the Norwegian Research Council through the Frienergi program and the Australian Research Council through the Discovery projects program.

Defect formation and thermal stability of H in high dose H implanted ZnO

implantation is found to create deformed layers with a uniaxial strain of 0.5–2.4% along the c-axis in ZnO, for the low and high dose, respectively. About 0.2–0.4% of the original implanted H concentration can still be detected in the samples by secondary ion mass spectrometry after annealing at a temperature up to 800 � C. The thermally stable H is tentatively attributed to H related defect complexes involving the substitutional H that are bound to O vacancies and/or the highly mobile interstitial H that are bound to substitutional Li occupying Zn vacancies as the samples are cooled slowly from high temperature annealing. H implantation to a dose of 1 � 10 17 cm � 2 and followed by annealing at 800 � C, is found to result in the formation of vacancy clusters that evolved into faceted voids with diameter varying from 2 to 30 nm. The truncations around the voids form more favorably on the O-terminated surface than on the Zn-terminated surface, suggesting that O is a preferred surface polarity for the internal facets of the voids in the presence of H. V C 2013 AIP Publishing LLC.

Iron and intrinsic deep level states in Ga2O3

Using a combination of deep level transient spectroscopy, secondary ion mass spectrometry, proton irradiation, and hybrid functional calculations, we identify two similar deep levels that are associated with Fe impurities and intrinsic defects in bulk crystals and molecular beam epitaxy and hydride vapor phase epitaxi-grown epilayers of β-Ga2O3. First, our results indicate that FeGa, and not an intrinsic defect, acts as the deep acceptor responsible for the often dominating E2 level at ∼0.78 eV below the conduction band minimum. Second, by provoking additional intrinsic defect generation via proton irradiation, we identified the emergence of a new level, labeled as E2*, having the ionization energy very close to that of E2, but exhibiting an order of magnitude larger capture cross section. Importantly, the properties of E2* are found to be consistent with its intrinsic origin. As such, contradictory opinions of a long standing literature debate on either extrinsic or intrinsic origin of the deep acceptor in question converge accounting for possible contributions from E2 and E2* in different experimental conditions.