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Dive into the research topics where Laurent Capolungo is active.

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Featured researches published by Laurent Capolungo.


Philosophical Magazine | 2010

Statistical analyses of deformation twinning in magnesium

Irene J. Beyerlein; Laurent Capolungo; P.E. Marshall; Rodney J. McCabe; C.N. Tomé

To extract quantitative and meaningful relationships between material microstructure and deformation twinning in magnesium, we conduct a statistical analysis on large data sets generated by electron backscattering diffraction (EBSD). The analyses show that not all grains of similar orientation and grain size form twins, and twinning does not occur exclusively in grains with high twin Schmid factors or in the relatively large grains of the sample. The number of twins per twinned grain increases with grain area, but twin thickness and the fraction of grains with at least one visible twin are independent of grain area. On the other hand, an analysis of twin pairs joined at a boundary indicates that grain boundary misorientation angle strongly influences twin nucleation and growth. These results question the use of deterministic rules for twin nucleation and Hall–Petch laws for size effects on twinning. Instead, they encourage an examination of the defect structures of grain boundaries and their role in twin nucleation and growth.


Modelling and Simulation in Materials Science and Engineering | 2013

Virtual diffraction analysis of Ni [0 1 0] symmetric tilt grain boundaries

S P Coleman; Douglas E. Spearot; Laurent Capolungo

Electron and x-ray diffraction are well-established experimental methods used to explore the atomic scale structure of materials. In this work, a computational method is implemented to produce virtual electron and x-ray diffraction patterns directly from atomistic simulations without a priori knowledge of the unit cell. This method is applied to study the structure of [0 1 0] symmetric tilt low-angle and large-angle grain boundaries in Ni. Virtual electron diffraction patterns and x-ray diffraction 2θ line profiles show that this method can distinguish between low-angle grain boundaries with different misorientations and between low-angle boundaries with the same misorientation but different dislocation configurations. For large-angle Σ5 (2 1 0), Σ29 (5 2 0) and Σ5 (3 1 0) coincident site lattice [0 1 0] symmetric tilt grain boundaries, virtual diffraction methods can identify the misorientation of the grain boundary and show subtle differences between grain boundaries in the x-ray 2θ line profiles. A thorough analysis of the effects of simulation size on the relrod structure in the electron diffraction patterns is presented.


Modelling and Simulation in Materials Science and Engineering | 2010

The role of elastic anisotropy on plasticity in hcp metals: a three-dimensional dislocation dynamics study

Laurent Capolungo; Irene J. Beyerlein; Z QWang

The effects of long-range and short-range interactions on the early stress–strain response and dislocation density evolution in hexagonal close-packed (hcp) metals are studied using three-dimensional discrete dislocation dynamics (DD). To examine long-range interactions, the DD code is developed such that elastic stress fields between interacting dislocations are calculated by either enforcing elastic isotropy or considering the actual elastic anisotropic constants of the hcp metal. To improve treatment of short-range interactions, a set of local rules for the behavior of closely interacting dislocations is implemented. In particular, a new scheme for elastic repulsion in the event of repulsive short-range interactions is presented and found to have a significant effect on the stress–strain response and dislocation density evolution. Large-scale simulations are performed for three hcp single crystals (Hf, Mg and Zr) in c-axis tension to examine the effect of elastic anisotropy on the collective response of several interacting dislocations. It is found that departure from isotropic elasticity has a substantial effect on strain hardening, particularly for Hf.


Philosophical Magazine | 2013

Elastic constitutive laws for incompatible crystalline media: the contributions of dislocations, disclinations and G-disclinations

Manas Vijay Upadhyay; Laurent Capolungo; Vincent Taupin

Linear higher-grade higher-order elastic constitutive laws for compatible (defect-free) and incompatible (containing crystal line defects) media are presented. In the proposed model, the free energy density of a body subjected to elastic deformation under the action of surface tractions, moments or hyper-traction tensors (second-order tensors whose anti-symmetric part corresponds to moments) has contributions coming from the first two gradients of displacements. Thermodynamic considerations reveal that only the symmetric component of the gradient of elastic displacement, i.e., compatible elastic strain tensor, and the anti-symmetric component of the second gradient of elastic displacement, i.e., compatible third-order elastic curvature tensor, contribute to the free energy density during compatible deformation of the body. The line crystal defect contributions are accounted for by incorporating the incompatible components of elastic strains, curvatures and symmetric 2-distortions as state variables of the free energy density. In particular, the presence of generalized disclinations (G-disclinations) is acknowledged when the medium is subjected to surface hyper-traction tensors having a non-zero symmetric component along with surface-tractions on its boundary. Mechanical dissipation analysis provides for the coupling between the Cauchy stresses and third-order symmetric hyper-stresses. The free energy density and elastic laws for a defect-free and line crystal defected medium are proposed in a linear setting. In the special case of isotropy, the cross terms between elastic strains and curvatures contribute to the free energy density through a single elastic constant. More interestingly, the Cauchy and couple stresses are found to have contributions coming from both, elastic strains and curvatures.


Metallurgical and Materials Transactions A-physical Metallurgy and Materials Science | 2015

Analysis of Obstacle Hardening Models Using Dislocation Dynamics: Application to Irradiation-Induced Defects

Cameron Sobie; Nicolas Bertin; Laurent Capolungo

Irradiation hardening in


Modelling and Simulation in Materials Science and Engineering | 2016

Multi-scale simulation of radiation damage accumulation and subsequent hardening in neutron-irradiated α-Fe

Aaron Dunn; Remi Philippe Michel Dingreville; Laurent Capolungo


Philosophical Magazine | 2010

Stress influence on high temperature oxide scale growth: Modeling and investigation on a thermal barrier coating system

Audric Saillard; Mohammed Cherkaoui; Laurent Capolungo; Esteban P. Busso

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Philosophical Magazine | 2011

A new micromechanics-based scale transition model for the strain-rate sensitive behavior of nanocrystalline materials

C. Schillebeeckx; Stéphane Berbenni; Laurent Capolungo; Mohammed Cherkaoui


Modelling and Simulation in Materials Science and Engineering | 2014

The effect of interfaces on the mechanical behaviour of multilayered metallic laminates

Cameron Sobie; M.G. McPhie; Laurent Capolungo; Mohammed Cherkaoui

α-iron represents a critical factor in nuclear reactor design and lifetime prediction. The dispersed barrier hardening, Friedel Kroupa Hirsch (FKH), and Bacon Kocks Scattergood (BKS) models have been proposed to predict hardening caused by dislocation obstacles in metals, but the limits of their applicability have never been investigated for varying defect types, sizes, and densities. In this work, dislocation dynamics calculations of irradiation-induced obstacle hardening in the athermal case were compared to these models for voids, self-interstitial atom (SIA) loops, and a combination of the two types. The BKS model was found to accurately predict hardening due to voids, whereas the FKH model was superior for SIA loops. For both loops and voids, the hardening from a normal distribution of defects was compared to that from the mean size, and was shown to have no statistically significant dependence on the distribution. A mean size approach was also shown to be valid for an asymmetric distribution of voids. A non-linear superposition principle was shown to predict the hardening from the simultaneous presence of voids and SIA loops.


Materials Science Forum | 2009

Multi-Scale Modeling of Texture Evolution in Beryllium and Zirconium during Equal Channel Angular Extrusion

Irene J. Beyerlein; Laurent Capolungo; G.G. Yapici; C.N. Tomé; I. Karaman

A hierarchical methodology is introduced to predict the effects of radiation damage and irradiation conditions on the yield stress and internal stress heterogeneity developments in polycrystalline α-Fe. Simulations of defect accumulation under displacement cascade damage conditions are performed using spatially resolved stochastic cluster dynamics. The resulting void and dislocation loop concentrations and average sizes are then input into a crystal plasticity formulation that accounts for the change in critical resolved shear stress due to the presence of radiation induced defects. The simulated polycrystalline tensile tests show a good match to experimental hardening data over a wide range of irradiation doses. With this capability, stress heterogeneity development and the effect of dose rate on hardening is investigated. The model predicts increased hardening at higher dose rates for low total doses. By contrast, at doses above 10–2 dpa when cascade overlap becomes significant, the model does not predict significantly different hardening for different dose rates. In conclusion, the development of such a model enables simulation of radiation damage accumulation and associated hardening without relying on experimental data as an input under a wide range of irradiation conditions such as dose, dose rate, and temperature.

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Mohammed Cherkaoui

Georgia Institute of Technology

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C.N. Tomé

Los Alamos National Laboratory

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Aaron Dunn

Georgia Institute of Technology

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Enrique Martinez

Los Alamos National Laboratory

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Rodney J. McCabe

Los Alamos National Laboratory

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Pierre-Alexandre Juan

Georgia Institute of Technology

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Jianmin Qu

Georgia Institute of Technology

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