Laurent Dellmann

Polymer-Waveguide-Based Board-Level Optical Interconnect Technology for Datacom Applications

On the basis of a realized 12times10 Gb/s card-to-card optical link demonstrator, the capabilities of a polymer-waveguide-based board-level optical interconnect technology are presented. The conception and realization of the modular building blocks required for this board-level optical interconnect technology are described in detail. In particular, we report on the fabrication and characterization of board-integrated optical low-loss polymer waveguides that are compatible with printed circuit board (PCB) manufacturing processes. We also explain our fully passive alignment technique, superseding time-consuming active positioning of components and connectors. To realize optical transceiver modules comprising vertical cavity surface emitting laser (VCSEL) arrays with laser drivers and photodetector arrays with transimpedance amplifiers (TIAs), a mass-production concept based on wafer-level processing has been elaborated and successfully implemented.

Development of a low-cost low-loss polymer waveguide technology for parallel optical interconnect applications

We report on the material evaluation, design, fabrication, and characterization of low-loss multimode polymer waveguides that are compatible with standard PCB manufacturing processes for use in large-area high-density high speed optical backplane interconnects.

120 Gb/s Optical Card-to-Card Interconnect Link Demonstrator with Embedded Waveguides

We report on a card-to-card optical interconnect demonstrator with passively aligned butt-coupled optoelectronic modules onto waveguides embedded into the printed circuit board (PCB). After describing selected building blocks, we will present experimental results obtained with the demonstrator hardware consisting of a parallel 12-channel at 10 Gb/s (120 Gb/s) optical card-to-card link.

Passive alignment of optical elements in a printed circuit board

A successful implementation of optics into PCBs (printed circuit boards) requires a precise passive alignment of optical elements relative to the optical waveguides in the board. We tackled this challenge with a novel concept that allows the passive alignment onto a PCB of any optical or optoelectronic building block with a precision of a few micrometers. Markers, structured into a copper layer during manufacturing, are used as a position reference for the polymer waveguide fabrication and for the formation of mechanical alignment features. To form the latter, laser drilling, a standard process for via formation in PCBs, is used. We were able to demonstrate repeated insertions of adapter elements into these alignment slots with a standard deviation of 3 mum for in-plane displacements. Afterwards, optical modules were mounted onto the adapters, using a standard MT interface provided by the adapter. We measured a standard deviation of the order of 5 mum for the in-plane and out-of-plane misalignments of the module with respect to the optical waveguides. The passive alignment concept demonstrated enables accurate and simple plug-in of any kind of element, in particular of optical and opto-electronic elements, into a PCB. The concept is based on established PCB manufacturing processes, which is crucial for the development towards a low-cost optical interconnect technology

Projected phase-change memory devices.

Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected memory device, whose distinguishing feature is that the physical mechanism of resistance storage is decoupled from the information-retrieval process. We designed and fabricated projected memory devices based on the phase-change storage mechanism and convincingly demonstrate the concept through detailed experimentation, supported by extensive modelling and finite-element simulations. The projected memory devices exhibit remarkably low drift and excellent noise performance. We also demonstrate active control and customization of the programming characteristics of the device that reliably realize a multitude of resistance states.

Oxygenated amorphous carbon for resistive memory applications.

Carbon-based electronics is a promising alternative to traditional silicon-based electronics as it could enable faster, smaller and cheaper transistors, interconnects and memory devices. However, the development of carbon-based memory devices has been hampered either by the complex fabrication methods of crystalline carbon allotropes or by poor performance. Here we present an oxygenated amorphous carbon (a-COx) produced by physical vapour deposition that has several properties in common with graphite oxide. Moreover, its simple fabrication method ensures excellent reproducibility and tuning of its properties. Memory devices based on a-COx exhibit outstanding non-volatile resistive memory performance, such as switching times on the order of 10 ns and cycling endurance in excess of 10(4) times. A detailed investigation of the pristine, SET and RESET states indicates a switching mechanism based on the electrochemical redox reaction of carbon. These results suggest that a-COx could play a key role in non-volatile memory technology and carbon-based electronics.

Design and implementation of an optical interconnect demonstrator with board-integrated waveguides and microlens coupling

We discuss some of the trade-offs that we are facing when choosing design parameters for future optical backplane interconnects. We present some of our current choices, along with experimental module- and system-level results.

Optical links for printed circuit boards

We identify applications for optics-enabled printed circuit boards, together with a list of requirements that have to be met for real-world products. We draw conclusions for the technology choices, and present our approaches and experiments.

Changes in electrical transport and density of states of phase change materials upon resistance drift

Phase-change memory technology has become more mature in recent years. But some fundamental problems linked to the electrical transport properties in the amorphous phase of phase-change materials still need to be solved. The increase of resistance over time, called resistance drift, for example, poses a major challenge for the implementation of multilevel storage, which will eventually be necessary to remain competitive in terms of high storage densities. To link structural properties with electrical transport, a broader knowledge of (i) changes in the density of states (DoS) upon structural relaxation and (ii) the influence of defects on electrical transport is required. In this paper, we present temperaturedependent conductivity and photo-conductivity measurements on the archetype phase change material GeTe. It is shown that trap-limited band transport at high temperatures (above 165 K) and variable range hopping at low temperatures are the predominating transport mechanism. Based on measurements of the temperature dependence of the optical band gap, modulated photo-conductivity and photo-thermal deflection spectroscopy, a DoS model for GeTe was proposed. Using this DoS, the temperature dependence of conductivity and photo-conductivity has been simulated. Our work shows how changes in the DoS (band gap and defect distributions) will affect the electrical transport before and after

Butt-coupled optoelectronic modules for high-speed optical interconnects

This paper presents the Butt-coupled silicon optoelectronic modules for high-speed optical interconnects. The optoelectronic (OE) modules is populated by flip-chip bonding either with VCSELs or detectors placed in direct contact with the waveguides without additional optical elements. The light is guided through the Si module by integrated waveguides based on holes etched through the silicon, which are then oxidized and filled with a polymer. This integrated OE module concept requires only one alignment step in the board and is compatible with a multi-layer waveguide approach. Data transmission of up to 5 Gbps has been demonstrated.