Lei Qianqian
Xi'an Polytechnic University
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Publication
Featured researches published by Lei Qianqian.
Journal of Semiconductors | 2011
Lei Qianqian; Lin Min; Chen Zhiming; Shi Yin
A high-linearity PGA (programmable gain amplifier) with a DC offset calibration loop is proposed. The PGA adopts a differential degeneration structure to vary voltage gain and uses the closed-loop structure including the input op-amps to enhance the linearity. A continuous time feedback based DC offset calibration loop is also designed to solve the DC offset problem. This PGA is fabricated by TSMC 0.13 μm CMOS technology. The measurements show that the receiver PGA (RXPGA) provides a 64 dB gain range with a step of 1 dB, and the transmitter PGA (TXPGA) covers a 16 dB gain. The RXPGA consumes 18 mA and the TXPGA consumes 7 mA (I and Q path) under a 3.3 V supply. The bandwidth of the multi-stage PGA is higher than 20 MHz. In addition, the DCOC (DC offset cancellation) circuit shows 10 kHz of HPCF (high pass cutoff frequency) and the DCOC settling time is less than 0.45 μs.
Journal of Semiconductors | 2013
Lei Qianqian; Zhao Erhu; Yuan Fang; Lin Min; Li Lianbi; Feng Song
A novel I/Q mismatch calibration technique based on a digital baseband for a direct conversion transmitter is implemented in TSMC 0.13 μm CMOS technology. The proposed technique finishes a calibration task, which only needs a calibration chain to detect mismatches and then transmit them to the digital baseband. Simulation results show that the calibrated errors of the proposed technique are less than 7%. The measurement results indicate the function of the proposed technique is correct, but the performance should be improved further.
Journal of Semiconductors | 2013
Lei Qianqian; Lin Min; Shi Yin
A low voltage low power CMOS limiter and received signal strength indicator (RSSI) with an integrated automatic gain control (AGC) loop for a short-distance receiver are implemented in SMIC 0.13 μm CMOS technology. The RSSI has a dynamic range of more than 60 dB and the RSSI linearity error is within ±0.5 dB for an input power from −65 to −8 dBm. The RSSI output voltage is from 0.15 to 1 V and the slope of the curve is 14.17 mV/dB while consuming 1.5 mA (I and Q paths) from a 1.2 V supply. Auto LNA gain mode selection with a combined RSSI function is also presented. Furthermore, with the compensation circuit, the proposed RSSI shows good temperature-independent and good robustness against process variation characteristics.
Journal of Semiconductors | 2012
Gong Zheng; Chu Xiaojie; Lei Qianqian; Lin Min; Shi Yin
An analog baseband circuit for a direct conversion wireless local area network (WLAN) transceiver in a standard 0.13-μm CMOS occupying 1.26 mm2 is presented. The circuit consists of active-RC receiver (RX) 4th order elliptic lowpass filters(LPFs), transmit (PGAs) with DC offset cancellation (DCOC) servo loops, and on-chip output buffers. The RX baseband gain can be programmed in the range of −11 to 49 dB in 2 dB steps with 50–30.2 nV/√Hz input referred noise (IRN) and a 21 to −41 dBm in-band 3rd order interception point (IIP3). The RX/TX LPF cutoff frequencies can be switched between 5 MHz, 10 MHz, and 20 MHz to fulfill the multimode 802.11b/g/n requirements. The TX baseband gain of the I/Q paths are tuned separately from −1.6 to 0.9 dB in 0.1 dB steps to calibrate TX I/Q gain mismatches. By using an identical integrator based elliptic filter synthesis method together with global compensation applied to the LPF capacitor array, the power consumption of the RX LPF is considerably reduced and the proposed chip draws 26.8 mA/8 mA by the RX/TX baseband paths from a 1.2 V supply.
Journal of Semiconductors | 2011
Lei Qianqian; Chen Zhiming; Gong Zheng; Shi Yin
This paper presents a 200 mA low-dropout (LDO) linear regulator using two modified techniques for frequency compensation. One technique is that the error amplifier uses a common source stage with variable load, which is controlled by the output current, is served as the second stage for a stable frequency response. The other technique is that the LDO uses a pole-zero tracking compensation technique at the error amplifier to achieve a good frequency response. The proposed circuit was fabricated and tested in HJTC 0.18 μm CMOS technology. The designed LDO linear regulator works under the input voltage of 2.8–5 V and provides up to 200 mA load current for an output voltage of 1.8 V. The total error of the output voltage due to line and load variation is less than 0.015%. The LDO die area is 630 × 550 μm2 and the quiescent current is 130 μA.
Journal of Semiconductors | 2012
Lei Qianqian; Lin Min; Shi Yin
A low power process/temperature variation-tolerant CMOS received signal strength indicator (RSSI) and limiter amplifier are designed using SMIC 0.13 μm CMOS technology. The limiter uses six-stage amplifier architecture for minimum power consideration. The RSSI has a dynamic range of more than 60 dB, and the RSSI linearity error is within ±0.5 dB for an input power from −65 to −8 dBm. The RSSI output voltage is from 0.15 to 1 V and the slope of the curve is 14.17 mV/dB. Furthermore, with the compensation circuit, the proposed RSSI shows good temperature independence and robustness against process variation characteristics. The RSSI with an integrated AGC loop draws 1.5 mA (I and Q paths) from a 1.2 V single supply.
Journal of Semiconductors | 2011
Lei Qianqian; Chen Zhiming; Shi Yin; Chu Xiaojie; Gong Zheng
A low-power high-linearity linear-in-dB variable gain amplifier (VGA) with novel DC offset calibration loop for direct-conversion receiver (DCR) is proposed. The proposed VGA uses the differential-ramp based technique, a digitally programmable gain amplifier (PGA) can be converted to an analog controlled dB-linear VGA. An operational amplifier (OPAMP) utilizing an improved Miller compensation approach is adopted in this VGA design. The proposed VGA shows a 57 dB linear range. The DC offset cancellation (DCOC) loop is based on a continuous-time feedback that includes the Miller effect and a linear range operation MOS transistor to realize high-value capacitors and resistors to solve the DC offset problem, respectively. The proposed approach requires no external components and demonstrates excellent DCOC capability in measurement. Fabricated using SMIC 0.13 μm CMOS technology, this VGA dissipates 4.5 mW from a 1.2 V supply voltage while occupying 0.58 mm2 of chip area including bondpads. In addition, the DCOC circuit shows 500 Hz high pass cutoff frequency (HPCF) and the measured residual DC offset at the output of VGA is less than 2 mV.
Journal of Semiconductors | 2010
Lei Qianqian; Xu Qiming; Chen Zhiming; Shi Yin; Lin Min; Jia Hailong
A wide tuning range, low power CMOS automatic gain control (AGC) with a simple architecture is proposed. The proposed AGC is composed of a variable gain amplifier (VGA), a comparator and a charge pump, and the dB-linear gain is controlled by the charge pump. The AGC was implemented in a 0.18 μm CMOS technology. The dynamic range of the VGA is more than 55 dB, the bandwidth is 30 MHz, and the gain error is lower than ±1.5 dB over the full temperature and gain ranges. It is designed for GPS application and is fed from a single 1.8 V power supply. The AGC power consumption is less than 5 mW, and the area of the AGC is 700 × 450 μm2.A wide tuning range, low power CMOS automatic gain control (AGC) with a simple architecture is proposed. The proposed AGC is composed of a variable gain amplifier (VGA), a comparator and a charge pump, and the dB-linear gain is controlled by the charge pump. The AGC was implemented in a 0.18 m CMOS technology. The dynamic range of the VGA is more than 55 dB, the bandwidth is 30 MHz, and the gain error is lower than ̇1.5 dB over the full temperature and gain ranges. It is designed for GPS application and is fed from a single 1.8 V power supply. The AGC power consumption is less than 5 mW, and the area of the AGC is 700 450 m.
Archive | 2015
Feng Song; Xue Bin; Li Lianbi; Lei Qianqian; Song Lixun; Zhai Xuejun; Zhu Changjun
Archive | 2017
Feng Song; Xue Bin; Li Lianbi; Lei Qianqian; Yang Yanfei; Song Lixun; Zhai Xuejun; Zhu Changjun