Leijun Yin

InxGa1-xas nanowires on silicon: One-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics

We report on the one-dimensional (1D) heteroepitaxial growth of In(x)Ga(1-x)As (x = 0.2-1) nanowires (NWs) on silicon (Si) substrates over almost the entire composition range using metalorganic chemical vapor deposition (MOCVD) without catalysts or masks. The epitaxial growth takes place spontaneously producing uniform, nontapered, high aspect ratio NW arrays with a density exceeding 1 × 10(8)/cm(2). NW diameter (∼30-250 nm) is inversely proportional to the lattice mismatch between In(x)Ga(1-x)As and Si (∼4-11%), and can be further tuned by MOCVD growth condition. Remarkably, no dislocations have been found in all composition In(x)Ga(1-x)As NWs, even though massive stacking faults and twin planes are present. Indium rich NWs show more zinc-blende and Ga-rich NWs exhibit dominantly wurtzite polytype, as confirmed by scanning transmission electron microscopy (STEM) and photoluminescence spectra. Solar cells fabricated using an n-type In(0.3)Ga(0.7)As NW array on a p-type Si(111) substrate with a ∼ 2.2% area coverage, operates at an open circuit voltage, V(oc), and a short circuit current density, J(sc), of 0.37 V and 12.9 mA/cm(2), respectively. This work represents the first systematic report on direct 1D heteroepitaxy of ternary In(x)Ga(1-x)As NWs on silicon substrate in a wide composition/bandgap range that can be used for wafer-scale monolithic heterogeneous integration for high performance photovoltaics.

Record performance of electrical injection sub-wavelength metallic-cavity semiconductor lasers at room temperature

We demonstrate a continuous wave (CW) sub-wavelength metallic-cavity semiconductor laser with electrical injection at room temperature (RT). Our metal-cavity laser with a cavity volume of 0.67λ3 (λ = 1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength metallic-cavity laser. Such record performance provides convincing evidences of the feasibility of RT CW sub-wavelength metallic-cavity lasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures.

Electrical injection, continuous wave operation of subwavelength-metallic-cavity lasers at 260 K

We report continuous wave lasing operation at T=260 K of subwavelength-metallic-cavities with semiconductor core encapsulated in silver under electric injection. The physical cavity volumes of the two lasers presented are 0.96λ3 (λ=1563.4 nm) and 0.78λ3 (λ=1488.7 nm), respectively. Longitudinal modes observed in one of lasers correspond to the Fabry–Perot cavity in the length direction. Such record high temperature operation of a subwavelength laser is of great importance for the development of small light sources in future integrated photonic circuits and other on-chip applications.

Dynamical Color-Controllable Lasing with Extremely Wide Tuning Range from Red to Green in a Single Alloy Nanowire Using Nanoscale Manipulation

Multicolor lasing and dynamic color-tuning in a wide spectrum range are challenging to realize but critically important in many areas of technology and daily life, such as general lighting, display, multicolor detection, and multiband communication. By exploring nanoscale growth and manipulation, we have demonstrated the first active dynamical color control of multicolor lasing, continuously tunable between red and green colors separated by 107 nm in wavelength. This is achieved in a purposely engineered single CdSSe alloy nanowire with composition varied along the wire axis. By looping the wide-gap end of the alloy nanowire through nanoscale manipulation, two largely independent (only weakly coupled) laser cavities are formed respectively for the green and red color modes. Our approach simultaneously overcomes the two fundamental challenges for multicolor lasing in material growth and cavity design. Such multicolor lasing and continuous color tuning in a wide spectral range represents a new paradigm shift and would eventually enable color-by-design and white-color lasers for lighting, illumination, and many other applications.

An electrical injection metallic cavity nanolaser with azimuthal polarization

We demonstrated for the first time an azimuthally polarized laser source from an electrically driven metallic cavity nanolaser with a physical cavity volume of 0.146 λ3 (λ = 1416 nm). Single TE01 mode lasing at 78 K was achieved by taking the advantages of the large free spectral range in such nanoscale lasers and the azimuthal polarization of lasing emission was verified experimentally. Mode shift controlled by device cavity radius was observed over a large wavelength range from 1.37 μm to 1.53 μm. Such metallic cavity nanolaser provides a compact electrically driven laser source for azimuthally polarized beam.

Simultaneous two-color lasing in a single CdSSe heterostructure nanosheet

The ability of a single monolithic semiconductor structure to emit or lase in a broad spectrum range is of great importance for many applications such as solid-state lighting and multi-spectrum detection. But spectral range of a laser or light-emitting diode made of a given semiconductor is typically limited by its emission or gain bandwidth. Due to lattice mismatch, it is typically difficult to grow thin film or bulk materials with very different bandgaps in a monolithic fashion. But nanomaterials such as nanowires, nanobelts, nanosheets provide a unique opportunity. Here we report our experimental results demonstrating simultaneous lasing in two visible colors at 526 and 623 nm from a single CdSSe heterostructure nanosheet at room temperature. The 97 nm wavelength separation of the two colors is significantly larger than the gain bandwidth of a typical single II‐VI semiconductor material. Such lasing and light emission in a wide spectrum range from a single monolithic structure will have important applications mentioned above. (Some figures may appear in colour only in the online journal)

CdxPb1–xS Alloy Nanowires and Heterostructures with Simultaneous Emission in Mid-Infrared and Visible Wavelengths

Alloying of CdS and PbS could potentially provide an important semiconductor with a wide range of bandgaps, with bandedge emission from mid-infrared to visible green, for various optoelectronic applications. We investigate the possibility of CdPbS alloy formation in nanowire and nanobelt forms, especially the dependence of alloy composition on two different cooling routes. Our results show that rapid cooling immediately after the growth phase can lead to a high-quality uniform alloy with Cd composition larger than possible at thermal equilibrium and by natural cooling. On the contrary, unassisted natural cooling leads to the formation of axial or core-shell heterostructures, containing segments with pure CdS and CdPbS alloys with lower Cd content than through rapid cooling. Such heterostructures with green and mid-infrared emission provide simultaneous access to two widely separated wavelengths from a single monolithic structure and can be important for many applications. Our results can help identify strategies for growing nanostructures with uniform alloy of high Cd incorporation, core-shell structures with shell serving as a passivating or protecting layer, or interesting longitudinal heterostructures. Both various heterostructures and uniform alloys of these materials could be important for high-efficiency solar cells, novel detectors, and nanolasing in wide spectral ranges.

Single-crystal erbium chloride silicate nanowires as a Si-compatible light emission material in communication wavelength

We report on the first synthesis and structural characterizations of a new Erbium (Er) compound, the erbium chloride silicate (ECS, Er3Cl(SiO4)2) single crystal in a Si-ECS core-shell nanowire form. The Er-concentration in ECS at 1.6x1022 cm−3 is three orders of magnitude higher than that of the Er-doped materials. Photoluminescence spectra at both low and room temperatures exhibit well separated sharp emission lines in the near infrared region. The new single-crystal erbium-compound nanowires provide a unique Si-compatible material for high-gain light emission in communication wavelength and for many other photonic applications.

Long lifetime, high density single-crystal erbium compound nanowires as a high optical gain material

Erbium-containing materials of long lifetime and high Er density are important for achieving strong luminescence and high optical gain in compact integrated photonics devices. We have systematically studied the lifetime and crystal quality as a function of growth conditions for an erbium compound that we recently reported, erbium chloride silicate (ECS). The lifetime for the best quality ECS nanowires can be as long as 540 μs, the longest for high-density Er-materials, representing a lifetime-density product as high as 8.7 × 1018 s cm−3. Such high density, long lifetime erbium materials can find many interesting applications such as compact lasers or amplifiers.

Erbium concentration control and optimization in erbium yttrium chloride silicate single crystal nanowires as a high gain material

Increasing erbium concentration while minimizing the reduction of photoluminescence is an important task for achieving erbium-based high-gain materials for integrated photonics applications. Here, we demonstrate a strategy of controlled variation of Erbium density in the growth of erbium yttrium chloride silicate (EYCS) ((ErxY1−x)3(SiO4)2Cl)) single crystal nanowires by systematically varying x between 0 and 1. We show that, as a trade-off between high Er density and suppressed upconversion, Er composition x = 0.3 provides the best compromise with the strongest photoluminescence. This optimized Er-composition corresponds to an Er density of 5×1021 cm−3, five times larger than the optimized Er density demonstrated previously for other thin film materials. We estimate that this optimized EYCS is promising in achieving optical gain exceeding 100 dB/cm.