Léo Choubrac

Structure flexibility of the Cu2ZnSnS4 absorber in low-cost photovoltaic cells: from the stoichiometric to the copper-poor compounds.

Here we present for the very first time a single-crystal investigation of the Cu-poor Zn-rich derivative of Cu(2)ZnSnS(4). Nowadays, this composition is considered as the one that delivers the best photovoltaic performances in the specific domain of Cu(2)ZnSnS(4)-based thin-film solar cells. The existence of this nonstoichiometric phase is definitely demonstrated here in an explicit and unequivocal manner on the basis of powder and single-crystal X-ray diffraction analyses coupled with electron microprobe analyses. Crystals are tetragonal, space group I ̅4, Z = 2, with a = 5.43440(15) Å and c = 10.8382(6) Å for Cu(2)ZnSnS(4) and a = 5.43006(5) Å and c = 10.8222(2) Å for Cu(1.71)Zn(1.18)Sn(0.99)S(4).

X-ray resonant single-crystal diffraction technique, a powerful tool to investigate the kesterite structure of the photovoltaic Cu2ZnSnS4 compound

Cu/Zn disorder in the kesterite Cu2ZnSnS4 derivatives used for thin film based solar cells is an important issue for photovoltaic performances. Unfortunately, Cu and Zn cannot be distinguished by conventional laboratory X-ray diffraction. This paper reports on a resonant diffraction investigation of a Cu2ZnSnS4 single crystal from a quenched powdered sample. The full disorder of Cu and Zn in the z = 1/4 atomic plane is shown. The structure, namely disordered kesterite, is then described in the I42m space group.

Crystal Chemistry, Optical–Electronic Properties, and Electronic Structure of Cd1–xIn2+2x/3S4 Compounds (0 ≤ x ≤ 1), Potential Buffer in CIGS-Based Thin-Film Solar Cells

CdIn2S4 and In2S3 compounds were both previously studied as buffer layers in CIGS-based thin-film solar cells, each of them exhibiting advantages and disadvantages. Thus, we naturally embarked on the study of the CdIn2S4-In2S3 system, and a series of Cd1- xIn2+2 x/3S4 (0 ≤ x ≤ 1) materials were prepared and characterized. Our results show that two solid solutions exist. The aliovalent substitution of cadmium(II) by indium(III) induces a structural transition at x ≈ 0.7 from cubic spinel Fd3̅ m to tetragonal spinel I41/ amd that is related to an ordering of cadmium vacancies. Despite this transition, the variation of optical gap is continuous and decreases from 2.34 to 2.11 eV going from CdIn2S4 to In2S3 while all compounds retain an n-type behavior. In contrast with the Al xIn2-xS3 solid solution, no saturation of the gap is observed. Moreover, XPS analyses indicate a difference between surface and volume composition of the grains for Cd-poor compounds. The use of Cd1- xIn2+2 x/3S4 compounds could be a good alternative to CdIn2S4 and In2S3 to improve CIGS/buffer interfaces with a compromise between photovoltaic conversion efficiency and cadmium content.