Leonardo Campos

Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene

We demonstrate anisotropic etching of single-layer graphene by thermally activated nickel nanoparticles. Using this technique, we obtain sub-10-nm nanoribbons and other graphene nanostructures with edges aligned along a single crystallographic direction. We observe a new catalytic channeling behavior, whereby etched cuts do not intersect, resulting in continuously connected geometries. Raman spectroscopy and electronic measurements show that the quality of the graphene is resilient under the etching conditions, indicating that this method may serve as a powerful technique to produce graphene nanocircuits with well-defined crystallographic edges.

On the growth and electrical characterization of CuO nanowires by thermal oxidation

We present a detailed study on the growth process of cupric oxide (CuO) nanowires by thermal oxidation. The morphology of nanowires, obtained at different oxidation temperatures and times, was determined. The diameter of nanowires was found to depend linear on temperature whereas the time dependence of their length is modeled by a parabolic law. The results suggest that CuO nanowires are formed as a result of the competition between grain boundary and lattice diffusion of Cu atoms across a Cu2O layer. Electrical characterization of the nanowires was also performed. A field effect transistor was produced with an isolated nanowire showing p-type characteristics. The resistivity, mobility, and density of carriers were calculated. Nanowire growth by thermal oxidation is very simple and has great potential to be used for large scale production; this opens possibilities for various kinds of application.

Quantum and classical confinement of resonant states in a trilayer graphene Fabry-Pérot interferometer

The advent of few-layer graphene has given rise to a new family of two-dimensional systems with emergent electronic properties governed by relativistic quantum mechanics. The multiple carbon sublattices endow the electronic wavefunctions with pseudospin, a lattice analogue of the relativistic electron spin, whereas the multilayer structure leads to electric-field-effect tunable electronic bands. Here we use these properties to realize giant conductance oscillations in ballistic trilayer graphene Fabry-Pérot interferometers, which result from phase coherent transport through resonant bound states beneath an electrostatic barrier. We confine these states by selectively decoupling them from the leads, resulting in transport via non-resonant states and suppression of the giant oscillations. The confinement is achieved both classically, by manipulating quasiparticle momenta with a magnetic field, and quantum mechanically, by locally varying the pseudospin character of the carrier wavefunctions. Our results illustrate the unique potential of trilayer graphene as a versatile platform for electron optics and pseudospintronics.

Asymmetric effect of oxygen adsorption on electron and hole mobilities in bilayer graphene: long- and short-range scattering mechanisms.

We probe electron and hole mobilities in bilayer graphene under exposure to molecular oxygen. We find that the adsorbed oxygen reduces electron mobilities and increases hole mobilities in a reversible and activated process. Our experimental results indicate that hole mobilities increase due to the screening of long-range scatterers by oxygen molecules trapped between the graphene and the substrate. First principle calculations show that oxygen molecules induce resonant states close to the charge neutrality point. Electron coupling with such resonant states reduces the electron mobilities, causing a strong asymmetry between electron and hole transport. Our work demonstrates the importance of short-range scattering due to adsorbed species in the electronic transport in bilayer graphene on SiO2 substrates.

Determination of the epitaxial growth of zinc oxide nanowires on sapphire by grazing incidence synchrotron x-ray diffraction

This letter shows that aligned zinc oxide (ZnO) nanowires growth on sapphire substrates is epitaxial and demonstrates the crystallographic relation between the two using grazing incidence synchrotron x-ray diffraction (XRD). The in-plane lattice match between the sapphire and the nanowires was directly probed by using XRD at grazing angles of incidence, where the lattice match between the (0001) plane of the sapphire and the (11−20) plane of the ZnO were observed simultaneously. It will also be shown that gold acts as a catalyst to initiate ZnO nanowire growth, but it does not interfere with the epitaxial mechanism between the nanowires and the sapphire substrate.

Landau Level Splittings, Phase Transitions, and Nonuniform Charge Distribution in Trilayer Graphene.

We report on magnetotransport studies of dual-gated, Bernal-stacked trilayer graphene (TLG) encapsulated in boron nitride crystals. We observe a quantum Hall effect staircase which indicates a complete lifting of the 12-fold degeneracy of the zeroth Landau level. As a function of perpendicular electric field, our data exhibit a sequence of phase transitions between all integer quantum Hall states in the filling factor interval -8<ν<0. We develop a theoretical model and argue that, in contrast to monolayer and bilayer graphene, the observed Landau level splittings and quantum Hall phase transitions can be understood within a single-particle picture, but imply the presence of a charge density imbalance between the inner and outer layers of TLG, even at charge neutrality and zero transverse electric field. Our results indicate the importance of a previously unaccounted band structure parameter which, together with a more accurate estimate of the other tight-binding parameters, results in a significantly improved determination of the electronic and Landau level structure of TLG.

Thermally activated hysteresis in high quality graphene/h-BN devices

We report on gate hysteresis of resistance in high quality graphene/hexagonal boron nitride (h-BN) devices. We observe a thermally activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375 K. In order to investigate the origin of the hysteretic phenomenon, we compare graphene/h-BN heterostructure devices with SiO2/Si back gate electrodes to devices with graphite back gate electrodes. The gate hysteretic behavior of the resistance is present only in devices with an h-BN/SiO2 interface and is dependent on the orientation of the applied gate electric field and sweep rate. We describe a phenomenological model which captures all of our findings based on charges trapped at the h-BN/SiO2 interface. Such hysteretic behavior in graphene resistance must be considered in high temperature applications for graphene devices and may open new routes for applications in digital electronics and memory devices.

Hydrogen sensing in titanate nanotubes associated with modulation in protonic conduction

Hydrogen/sodium titanate nanotubes (TNTs) were investigated as hydrogen (H(2)) sensors. TNT films exhibit good sensing properties and a large response, in particular at room temperature. Electrical conductivity measurements performed under different atmospheres from 25 to 300 °C indicate that, for T > 100 °C, conduction is thermally activated and can be attributed to electronic transport, whereas for T < 100 °C conduction is dominated by protonic transport. The T dependence of the H(2) sensitivity was determined and related to this variation in the dominant transport mechanism. For low T, H(2) sensing originates from the modulation in protonic conduction. Such modulation was attributed to the creation/destruction of surface hydroxyl groups.

Metal-graphene heterojunction modulation via H2 interaction

Combining experiment and theory, we investigate how a naturally created heterojunction (pn junction) at a graphene and metallic contact interface is modulated via interaction with molecular hydrogen (H2). Due to an electrostatic interaction, metallic electrodes induce pn junctions in graphene, leading to an asymmetrical resistance in electronic transport for electrons and holes. We report that the asymmetry in the resistance can be tuned in a reversible manner by exposing graphene devices to H2. The interaction between the H2 and graphene occurs solely at the graphene-contact pn junction and induces a modification on the electrostatic interaction between graphene and metallic contacts. We explain the experimental data with theory providing information concerning the length of the heterojunction and how it changes as a function of H2 adsorption. Our results are valuable for understanding the nature of the metal-graphene interfaces and have potential application for selective sensors of molecular hydrogen.Combining experiment and theory, we investigate how the naturally created heterojunction at a graphene and metallic contact is modulated via interaction with molecular hydrogen (H2). Due to electrostatic interaction, a Cr/Au electrode induces a pn junction in graphene, leading to an asymmetrical resistance between the charge carriers (electron and hole). This asymmetry is well modeled by considering the preferential charge scattering at the pn junction, and we show that it can be modulated in a reversible, selective and asymmetrical manner by exposing H2 to the metal-graphene interface. Our results are valuable for understanding the nature of the metal-graphene interfaces and demonstrate a novel route towards hydrogen sensor application. KEYWORDS: graphene, contact resistance,

Anomalous Nonlinear Optical Response of Graphene Near Phonon Resonances

In this work we probe the third-order nonlinear optical property of graphene and hexagonal boron nitride and their heterostructure by the use of coherent anti-Stokes Raman spectroscopy. When the energy difference of the two input fields matches the phonon energy, the anti-Stokes emission intensity is enhanced in h-BN, as usually expected, while for graphene an anomalous decrease is observed. This behavior can be understood in terms of a coupling between the electronic continuum and a discrete phonon state. We have also measured a graphene/h-BN heterostructure and demonstrate that the anomalous effect in graphene dominates the heterostructure nonlinear optical response.